公开(公告)号：US08129291B2

公开(公告)日：2012-03-06

申请号：US12901323

申请日：2010-10-08

申请人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Deakyun Jeong

发明人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Deakyun Jeong

IPC分类号： H01L21/31 ,  H01L21/469

摘要： A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

公开(公告)号：US20110086516A1

公开(公告)日：2011-04-14

申请号：US12901323

申请日：2010-10-08

申请人： Woo Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

发明人： Woo Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

IPC分类号： H01L21/318

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/3141

摘要： A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

摘要翻译： 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成具有Si-N键的电介质膜的方法包括：将含氮和氢的反应气体和稀有气体引入到半导体衬底 被放置 将具有小于1.0秒持续时间脉冲的含氢硅前体引入引入反应气体和稀有气体的反应空间中; 在硅前驱物被切断之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

公开(公告)号：US20120220139A1

公开(公告)日：2012-08-30

申请号：US13410970

申请日：2012-03-02

申请人： Woo-Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

发明人： Woo-Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

IPC分类号： H01L21/31

CPC分类号： C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111

摘要： A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

摘要翻译： 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成膜的方法包括：将含氮和氢的反应气体和稀有气体引入到其中放置半导体衬底的反应空间中; 将引入小于1.0秒持续时间脉冲的前体引入反应气体和稀有气体的反应空间; 在前体关闭之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

公开(公告)号：US08173554B2

公开(公告)日：2012-05-08

申请号：US12901323

申请日：2010-10-08

申请人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Deakyun Jeong

发明人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Deakyun Jeong

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/3141

摘要： A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

摘要翻译： 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成具有Si-N键的电介质膜的方法包括：将含氮和氢的反应气体和稀有气体引入到半导体衬底 被放置 将具有小于1.0秒持续时间脉冲的含氢硅前体引入引入反应气体和稀有气体的反应空间中; 在硅前驱物被切断之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

公开(公告)号：US08415259B2

公开(公告)日：2013-04-09

申请号：US13410970

申请日：2012-03-02

申请人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Daekyun Jeong

发明人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Daekyun Jeong

IPC分类号： H01L21/31

CPC分类号： C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111

摘要： A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

摘要翻译： 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成膜的方法包括：将含氮和氢的反应气体和稀有气体引入到其中放置半导体衬底的反应空间中; 将引入小于1.0秒持续时间脉冲的前体引入反应气体和稀有气体的反应空间; 在前体关闭之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

公开(公告)号：US08394466B2

公开(公告)日：2013-03-12

申请号：US12875889

申请日：2010-09-03

申请人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

发明人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

IPC分类号： H05H1/24

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/345 ,  C23C16/36 ,  C23C16/5096 ,  C23C16/515 ,  H01L21/02167 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

摘要： A method of forming a conformal dielectric film having Si—N bonds on a substrate having a patterned surface includes: introducing a reactant gas into a reaction space; introducing a silicon precursor in pulses of less than 5-second duration into the reaction space; applying a first RF power to the reaction space during the pulse of the silicon precursor; applying a second RF power to the reaction space during the interval of the silicon precursor pulse, wherein an average intensity of the second RF power during the interval of the silicon precursor pulse is greater than that of the first RF power during the pulse of the silicon precursor; and repeating the cycle to form a conformal dielectric film having Si—N bonds with a desired thickness on the patterned surface of the substrate.

摘要翻译： 在具有图案化表面的基板上形成具有Si-N键的保形电介质膜的方法包括：将反应气体引入反应空间; 将具有小于5秒持续时间脉冲的硅前体引入反应空间中; 在硅前驱体的脉冲期间将第一RF功率施加到反应空间; 在所述硅前体脉冲的间隔期间将第二RF功率施加到所述反应空间，其中在硅前体脉冲的间隔期间的所述第二RF功率的平均强度大于所述硅脉冲期间的所述第一RF功率的平均强度 前体 并重复该循环以在衬底的图案化表面上形成具有期望厚度的具有Si-N键的保形电介质膜。

公开(公告)号：US20110014795A1

公开(公告)日：2011-01-20

申请号：US12832739

申请日：2010-07-08

申请人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu

发明人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu

IPC分类号： H01L21/318

CPC分类号： H01L21/3141 ,  C23C16/345 ,  C23C16/45538 ,  C23C16/5096 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185

摘要： A method of forming stress-tuned dielectric films having Si—N bonds on a semiconductor substrate by modified plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen-and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space using a high frequency RF power source and a low frequency RF power source; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a stress-tuned dielectric film having Si—N bonds on the substrate.

摘要翻译： 通过改进的等离子体增强原子层沉积（PEALD）在半导体衬底上形成具有Si-N键的应力调谐电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入到反应空间内 放置半导体衬底; 使用高频RF电源和低频RF电源将RF功率应用于反应空间; 并将脉冲中的含氢硅前体引入反应空间，其中等离子体被激发，从而在衬底上形成具有Si-N键的应力调谐电介质膜。

公开(公告)号：US20120058282A1

公开(公告)日：2012-03-08

申请号：US12875889

申请日：2010-09-03

申请人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

发明人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

IPC分类号： C23C16/505 ,  C23C16/34

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/345 ,  C23C16/36 ,  C23C16/5096 ,  C23C16/515 ,  H01L21/02167 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

摘要： A method of forming a conformal dielectric film having Si—N bonds on a substrate having a patterned surface includes: introducing a reactant gas into a reaction space; introducing a silicon precursor in pulses of less than 5-second duration into the reaction space; applying a first RF power to the reaction space during the pulse of the silicon precursor; applying a second RF power to the reaction space during the interval of the silicon precursor pulse, wherein an average intensity of the second RF power during the interval of the silicon precursor pulse is greater than that of the first RF power during the pulse of the silicon precursor; and repeating the cycle to form a conformal dielectric film having Si—N bonds with a desired thickness on the patterned surface of the substrate.

摘要翻译： 在具有图案化表面的基板上形成具有Si-N键的保形电介质膜的方法包括：将反应气体引入反应空间; 将具有小于5秒持续时间脉冲的硅前体引入反应空间中; 在硅前驱体的脉冲期间将第一RF功率施加到反应空间; 在所述硅前体脉冲的间隔期间将第二RF功率施加到所述反应空间，其中在硅前体脉冲的间隔期间的所述第二RF功率的平均强度大于所述硅脉冲期间的所述第一RF功率的平均强度 前体 并重复该循环以在衬底的图案化表面上形成具有期望厚度的具有Si-N键的保形电介质膜。

公开(公告)号：US20100124618A1

公开(公告)日：2010-05-20

申请号：US12618419

申请日：2009-11-13

申请人： Akiko Kobayashi ,  Akira Shimizu ,  Kuo-wei Hong ,  Nobuyoshi Kobayashi ,  Atsuki Fukazawa

发明人： Akiko Kobayashi ,  Akira Shimizu ,  Kuo-wei Hong ,  Nobuyoshi Kobayashi ,  Atsuki Fukazawa

IPC分类号： B05D3/04

CPC分类号： C23C16/45542 ,  C23C16/345 ,  C23C16/56

摘要： A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.

摘要翻译： 基于脉冲CVD或ALD的成膜循环重复多次以形成单层绝缘膜，而在上述过程中重整循环是每个成膜循环一次或多次，通过处理 使用已经被等离子体激活的处理气体形成膜。

公开(公告)号：US08647722B2

公开(公告)日：2014-02-11

申请号：US12618419

申请日：2009-11-13

申请人： Akiko Kobayashi ,  Akira Shimizu ,  Kuo-wei Hong ,  Nobuyoshi Kobayashi ,  Atsuki Fukazawa

发明人： Akiko Kobayashi ,  Akira Shimizu ,  Kuo-wei Hong ,  Nobuyoshi Kobayashi ,  Atsuki Fukazawa

IPC分类号： H05H1/24

CPC分类号： C23C16/45542 ,  C23C16/345 ,  C23C16/56

摘要： A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.

摘要翻译： 基于脉冲CVD或ALD的成膜循环重复多次以形成单层绝缘膜，而在上述过程中重整循环是每个成膜循环一次或多次，通过处理 使用已经被等离子体激活的处理气体形成膜。