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公开(公告)号：US5485498A
公开(公告)日：1996-01-16
申请号：US269593
申请日：1994-07-01
CPC分类号： G03F7/70058 , G21K1/06 , G21K2201/06
摘要： An x-ray interface (40) provides increased x-ray collection efficiency for use in x-ray photolithography. The interface (40) comprises a housing (44) having a plurality of mirrored funnels (46) for collecting the x-rays. The mirrored funnels (46) are shaped to partially collimate and focus the x-rays. The interface (40) collects a greater percentage of the available x-rays from an x-ray source, and the interface (40) also permits a greater number of beamlines to be coupled to the x-ray source.
摘要翻译： x射线界面（40）提供了用于x射线光刻的增加的x射线收集效率。 接口（40）包括具有用于收集X射线的多个镜像漏斗（46）的壳体（44）。 镜像的漏斗（46）被成形为部分地准直和聚焦x射线。 接口（40）从x射线源收集更多百分比的可用x射线，并且接口（40）还允许更多数量的束线耦合到x射线源。
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公开(公告)号：US5469263A
公开(公告)日：1995-11-21
申请号：US269978
申请日：1994-07-01
申请人： Whitson G. Waldo, III , Gong Chen , Franco Cerrina
发明人： Whitson G. Waldo, III , Gong Chen , Franco Cerrina
CPC分类号： G03F9/7092 , G03F9/7076
摘要： A method for alignment in photolithographic processes includes providing a target (31) comprising features having a characteristic spatial period (P). An optical image of the target is captured, and components (33) of the image lacking the characteristic spatial period (P) are filtered out. The filtered image is integrated in the direction of the characteristic period (P) thereby creating an alignment signal (40). The alignment signal (40) is a symmetric signal which correlates to the symmetric target (31). A linear centroid (41) of the alignment signal is located, and corresponds to the precise linear center of the target (31). Consequently, the linear location of an object (10) upon which the target (31) is printed, can be accurately located. The process is performed in two perpendicular dimensions (x,y) so that the object (10) can be precisely located and positioned in two dimensions (x,y).
摘要翻译： 在光刻工艺中对准的方法包括提供包括具有特征空间周期（P）的特征的目标（31）。 拍摄目标的光学图像，并且滤出缺少特征空间周期（P）的图像的分量（33）。 滤波图像在特征周期（P）的方向上积分，从而产生对准信号（40）。 对准信号（40）是与对称目标（31）相关的对称信号。 定位对准信号的线性中心（41），并对应于目标（31）的精确线性中心。 因此，可以精确地定位打印有目标（31）的物体（10）的线性位置。 该过程在两个垂直维度（x，y）中进行，使得物体（10）可以精确地定位并且被定位在二维（x，y）中。
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公开(公告)号：US4891094A
公开(公告)日：1990-01-02
申请号：US356488
申请日：1989-05-25
IPC分类号： G03F7/26 , G03F7/16 , G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70583 , G03F7/20
摘要： The contrast of a photoresist layer used in a lithographic process for a given light source is optimized by determining the nonlinear relationship of the photoresist contrast with regard to the thickness thereof and then placing over a substrate a thickness of photoresist corresponding to a desired value of contrast indicated by the nonlinear relationship of contrast with photoresist thickness. The nonlinear contrast with regard to photoresist thickness function is a damped, sinusoidal like function with the difference between maxima and minima contrast values decreasing as the photoresist thickness increases and with higher absolute maxima values for contrast as photoresist thickness decreases. The amount of light needed to fully expose a given thickness of photoresist also varies with the photoresist thickness in a sinusoidal like manner and a phase difference may exist between the sinusoidal like contrast versus photoresist thickness function and the sinusoidal like exposing light versus photoresist thickness function. It is possible that the light source and the photoresist characteristics can be selected to product a predetermined phase difference.
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公开(公告)号：US5552247A
公开(公告)日：1996-09-03
申请号：US678098
申请日：1991-04-01
CPC分类号： G03F1/22 , G03F7/2002
摘要： A method of patterning an X-ray master mask (21) is described by using reduction projection. An X-ray mask (21) is provided with a photoactive material coating a plating base layer (24). The X-ray mask (21) is positioned under the reduction projection tool. The photoactive material on the X-ray mask (21) is exposed from a pattern (13) in the reduction projection tool.
摘要翻译： 通过使用缩小投影来描述图案化X射线主掩模（21）的方法。 X射线掩模（21）设置有涂覆有电镀基层（24）的光活性材料。 X射线掩模（21）位于缩小投影工具下方。 X射线掩模（21）上的光活性材料从还原投影工具中的图案（13）露出。
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公开(公告)号：US5548625A
公开(公告)日：1996-08-20
申请号：US398191
申请日：1995-03-02
CPC分类号： G03F7/70058 , G03F7/70466 , G03F7/70691 , G21K1/02
摘要： A method for performing multiple field parallel processing in x-ray lithography uses a coupled mirror assembly (30) and a coupled mask assembly (22) to define and print multiple fields (54 & 54') in one step. The coupled mirror assembly (30) has multiple mirrored surfaces (34). The coupled mask assembly (22) has as many masks (44) as there are mirrored surfaces (34). The number of masks in the mask assembly define the number image fields that can be printed in parallel during a single exposure step. Thus, the overall cycle time for lithographically exposing an entire semiconductor wafer surface is inversely proportional to the number of parallel image fields.
摘要翻译： 用于在x射线光刻中执行多场并行处理的方法使用耦合的反射镜组件（30）和耦合的掩模组件（22）来在一个步骤中限定和打印多个场（54和54'）。 耦合反射镜组件（30）具有多个镜像表面（34）。 耦合的掩模组件（22）具有与镜面（34）一样多的掩模（44）。 掩模组件中的掩模数量定义了在单个曝光步骤中可并行打印的数字图像字段。 因此，用于光刻曝光整个半导体晶片表面的整个循环时间与平行图像场的数量成反比。
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6.发明授权Alignment system and method of alignment by symmetrical and asymmetrical analysis 失效对准系统和对准方法通过对称和不对称分析
公开(公告)号：US5355306A
公开(公告)日：1994-10-11
申请号：US128427
申请日：1993-09-30
IPC分类号： G03F9/00 , G05B19/402 , G05B19/18 , G01J1/00 , G06F15/46
CPC分类号： G03F9/70 , G05B19/402 , G05B2219/33002 , G05B2219/45028 , G05B2219/49115
摘要： An alignment signal is analyzed asymmetrically using any means of artificial intelligence or similar logic to apply empirical or theoretical offsets to signal position calculations based on the unique signal shapes of the different signals collected. A database of signal shapes and correlated offsets is used to improve subsequent alignment steps. For example, a case-based reasoning method can be used.
摘要翻译： 使用人造智能或类似逻辑的任何手段对对齐信号进行分析，以将经验或理论偏移应用于基于收集的不同信号的唯一信号形状的信号位置计算。 使用信号形状和相关偏移的数据库来改进随后的对准步骤。 例如，可以使用基于案例的推理方法。
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公开(公告)号：US4977048A
公开(公告)日：1990-12-11
申请号：US375560
申请日：1989-07-05
CPC分类号： G03F9/70 , G03F7/091 , G03F7/2022
摘要： A method of actinic aligning semiconductor wafers which are coated with a contrast enhancement material is provided, wherein an alignment target formed on a semiconductor substrate which is coated with photoresist and contrast enhancement material is exposed to actinic wavelength light, while protecting active device areas from exposure. The contrast enhancement material over the alignment target is thus bleached so that the underlying alignment target becomes visible to actinic wavelength light. A pattern comprising an alignment pattern and an active device pattern is projected onto the wafer. The now visible alignment target is aligned to the projected alignment pattern with sub-exposure energy actinic light using conventional techniques and an actinic alignment tool, and the active device pattern subsequently exposed at an exposure energy of the actinic wavelength once the alignment is completed.
摘要翻译： 提供涂覆有对比度增强材料的光化对准半导体晶片的方法，其中形成在涂覆有光致抗蚀剂和对比度增强材料的半导体衬底上的取向靶暴露于光化波长的光，同时保护有源器件区域免受暴露 。 因此，对准目标物上的对比度增强材料被漂白，使得底层对准靶变得对于光化波长的光可见。 将包括对准图案和有源器件图案的图案投影到晶片上。 使用常规技术和光化对准工具将现在可见的对准目标与具有亚曝光能量光化光的投影对准图案对准，并且一旦对准完成，有源器件图案随后以光化波长的曝光能量曝光。
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