知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.017 seconds)

    Method and system for providing a read transducer having soft and hard magnetic bias structures
    1.
    发明授权
    Method and system for providing a read transducer having soft and hard magnetic bias structures 有权
    用于提供具有软和硬磁偏置结构的读取换能器的方法和系统

    公开(公告)号：US09087534B1

    公开(公告)日：2015-07-21

    申请号：US14290932

    申请日：2014-05-29

    Applicant: Western Digital (Fremont), LLC

    Inventor： Laurence L. Chen ,  Anup G. Roy ,  Yunfei Ding ,  Ming Mao ,  Amritpal S. Rana ,  Daniele Mauri

    IPC: G11B5/39

    CPC classification number: G11B5/3903 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/398

    Abstract: A method and system provide a magnetic transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a read sensor, at least one soft magnetic bias structure and at least one hard bias structure. The read sensor includes a sensor layer that has at least one edge in the track width direction along the ABS. The soft magnetic bias structure(s) are adjacent to the edge(s) of the sensor layer. The soft magnetic bias structure has a first permeability. The soft bias structure(s) are between the read sensor and the hard bias structure(s). The hard bias structure(s) are adjacent to a portion of the soft bias structure(s) and have a second permeability. The first permeability is at least ten multiplied by the second permeability.

    Abstract translation: 一种方法和系统提供具有空气轴承表面（ABS）的磁换能器。 磁换能器包括第一屏蔽，读取传感器，至少一个软磁偏置结构和至少一个硬偏压结构。 读取传感器包括沿ABS沿轨道宽度方向具有至少一个边缘的传感器层。 软磁偏置结构与传感器层的边缘相邻。 软磁偏置结构具有第一磁导率。 柔性偏置结构位于读取传感器和硬偏置结构之间。 硬偏压结构与软偏压结构的一部分相邻并且具有第二磁导率。 第一渗透率至少为乘以第二渗透率的十倍。

    Systems and methods for controlling soft bias thickness for tunnel magnetoresistance readers
    4.
    发明授权
    Systems and methods for controlling soft bias thickness for tunnel magnetoresistance readers 有权
    用于控制隧道磁阻读取器的软偏置厚度的系统和方法

    公开(公告)号：US09396743B1

    公开(公告)日：2016-07-19

    申请号：US14308366

    申请日：2014-06-18

    Applicant: Western Digital (Fremont), LLC

    Inventor： Yi Zheng ,  Ming Jiang ,  Anup G. Roy ,  Guanxiong Li ,  Ming Mao ,  Daniele Mauri

    IPC: G11B5/39

    CPC classification number: H01L43/12 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/398 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: Systems and methods for controlling a thickness of a soft bias layer in a tunnel magnetoresistance (TMR) reader are provided. One such method involves providing a magnetoresistive sensor stack including a free layer and a bottom shield layer, performing contiguous junction milling on the sensor stack, depositing an insulating layer on the sensor stack, depositing a spacer layer on the insulating layer, performing an angled milling sub-process to remove preselected portions of the spacer layer, depositing a soft bias layer on the sensor stack, and depositing a top shield layer on the sensor stack and the soft bias layer. The method can further involve adjusting an alignment of a top surface of the spacer layer with respect to the free layer. In one such case, the top surface of the spacer layer is adjusted to be below the free layer.

    Abstract translation: 提供了用于控制隧道磁阻（TMR）读取器中的软偏置层的厚度的系统和方法。 一种这样的方法包括提供包括自由层和底部屏蔽层的磁阻传感器堆叠，在传感器堆叠上执行连续接合铣削，在传感器堆叠上沉积绝缘层，在绝缘层上沉积间隔层，执行倾斜铣削 子过程以去除间隔层的预选部分，在传感器堆叠上沉积柔性偏置层，以及在传感器堆叠和柔性偏置层上沉积顶部屏蔽层。 该方法还可以包括相对于自由层调整间隔层的顶表面的对准。 在一种这样的情况下，间隔层的顶表面被调节到低于自由层。

    Method for providing an improved hard bias structure
    6.
    发明授权
    Method for providing an improved hard bias structure 失效
    提供改进的硬偏置结构的方法

    公开(公告)号：US08603593B1

    公开(公告)日：2013-12-10

    申请号：US13621799

    申请日：2012-09-17

    Applicant: Western Digital (Fremont), LLC

    Inventor： Anup G. Roy ,  Mahendra Pakala

    IPC: H05H1/24

    CPC classification number: G11B5/3932 ,  G01R33/0052 ,  G01R33/093 ,  H01F10/123

    Abstract: A method for providing a hard bias structure is provided. The method comprises providing a seed layer for a hard bias layer, the seed layer having a seed layer lattice constant and a natural growth texture. The method further comprises depositing the hard bias layer for the hard bias structure on the seed layer, the natural growth texture corresponding to a texture for the hard bias layer. The hard bias layer has a bulk lattice constant. The step of providing the seed layer includes forming a first plasma of a first deposition gas configured to expand the seed layer lattice constant if the bulk lattice constant is greater than the seed layer constant. The step of depositing the hard bias layer includes forming a second plasma of a second deposition gas configured to expand the bulk lattice constant if the seed layer lattice constant is greater than the bulk lattice constant.

    Abstract translation: 提供了一种用于提供硬偏压结构的方法。 该方法包括提供用于硬偏置层的种子层，种子层具有晶种晶格常数和自然生长纹理。 该方法还包括在种子层上沉积用于硬偏压结构的硬偏置层，对应于硬偏压层的纹理的自然生长织构。 硬偏置层具有体晶格常数。 提供种子层的步骤包括形成第一沉积气体的第一等离子体，其被配置为如果体晶格常数大于种子层常数则扩展晶种层晶格恒定。 沉积硬偏置层的步骤包括形成第二沉积气体的第二等离子体，其被配置为如果晶种晶格常数大于体晶格常数则扩大体晶格常数。

Patent Agency Ranking