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公开(公告)号：US20060011937A1
公开(公告)日：2006-01-19
申请号：US11227814
申请日：2005-09-14
申请人： Werner Goetz , Michael Krames , Anneli Munkholm
发明人： Werner Goetz , Michael Krames , Anneli Munkholm
摘要： In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.
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公开(公告)号：US20050236641A1
公开(公告)日：2005-10-27
申请号：US10830202
申请日：2004-04-21
申请人： Werner Goetz , Michael Krames , Anneli Munkholm
发明人： Werner Goetz , Michael Krames , Anneli Munkholm
摘要： In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.
摘要翻译： 在III族氮化物发光器件中，三元或四元发光层被配置为控制相分离程度。 在一些实施例中，发光层中的任何点处的InN组成与发光层中的平均InN组成之间的差小于20％。 在一些实施方案中，通过控制具有与发光层相同的组成的松弛的独立层中的晶格常数与基极区域中的晶格常数的比例来实现相分离的控制。 例如，该比率可以在约1至约1.01之间。
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公开(公告)号：US06630692B2
公开(公告)日：2003-10-07
申请号：US09870330
申请日：2001-05-29
申请人： Werner Goetz , Nathan Fredrick Gardner , Richard Scott Kern , Andrew Youngkyu Kim , Anneli Munkholm , Stephen A. Stockman , Christopher P. Kocot , Richard P. Schneider, Jr.
发明人： Werner Goetz , Nathan Fredrick Gardner , Richard Scott Kern , Andrew Youngkyu Kim , Anneli Munkholm , Stephen A. Stockman , Christopher P. Kocot , Richard P. Schneider, Jr.
IPC分类号： H01L3300
CPC分类号： H01L33/32 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/007
摘要： III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, and an n-type III-Nitride semiconductor layer disposed above the defect reduction structure. The n-type layer has, for example, a thickness greater than about one micron and a silicon dopant concentration greater than or equal to about 1019 cm−3. In another embodiment, a light emitting device includes a III-Nitride semiconductor active region that includes at least one barrier layer either uniformly doped with an impurity or doped with an impurity having a concentration graded in a direction substantially perpendicular to the active region.
摘要翻译： 提供了具有改进性能的III-氮化物发光二极管。 在一个实施例中，发光器件包括衬底，设置在衬底上的成核层，设置在成核层上方的缺陷减少结构，以及设置在缺陷还原结构之上的n型III-氮化物半导体层。 n型层例如具有大于约1微米的厚度和大于或等于约10厘米-3的硅掺杂剂浓度。 在另一个实施例中，发光器件包括III-氮化物半导体有源区，其包括均匀地掺杂有杂质或掺杂有在基本上垂直于有源区的方向上分级的浓度的杂质的至少一个势垒层。
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公开(公告)号：US20070262342A1
公开(公告)日：2007-11-15
申请号：US11383456
申请日：2006-05-15
申请人： Junko Kobayashi , Werner Goetz , Anneli Munkholm
发明人： Junko Kobayashi , Werner Goetz , Anneli Munkholm
IPC分类号： H01L33/00
CPC分类号： H01L33/305 , H01L33/007 , H01L33/0079 , H01L33/382
摘要： A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.
摘要翻译： 半导体结构包括发光区域，设置在发光区域的第一侧上的p型区域和设置在发光区域的第二侧上的n型区域。 发光区域的第一侧的半导体结构的厚度的至少10％包括铟。 可以通过生长n型区域，生长p型区域以及生长设置在n型区域和p型区域之间的发光层来形成这种半导体发光器件的一些示例。 n型区域的一部分的生长温度与p型区域的一部分的生长温度之间的温度差为至少140℃。
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公开(公告)号：US07906357B2
公开(公告)日：2011-03-15
申请号：US11383456
申请日：2006-05-15
IPC分类号： H01L21/00
CPC分类号： H01L33/305 , H01L33/007 , H01L33/0079 , H01L33/382
摘要： A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.
摘要翻译： 半导体结构包括发光区域，设置在发光区域的第一侧上的p型区域和设置在发光区域的第二侧上的n型区域。 发光区域的第一侧的半导体结构的厚度的至少10％包括铟。 可以通过生长n型区域，生长p型区域以及生长设置在n型区域和p型区域之间的发光层来形成这种半导体发光器件的一些示例。 n型区域的一部分的生长温度与p型区域的一部分的生长温度之间的温度差为至少140℃。
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公开(公告)号：US20100327299A1
公开(公告)日：2010-12-30
申请号：US12494988
申请日：2009-06-30
申请人： Theodore Chung , Anneli Munkholm
发明人： Theodore Chung , Anneli Munkholm
CPC分类号： H01L33/30 , H01L33/02 , H01L33/14 , H01L33/387 , H01L33/405
摘要： A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1-x p-contact layer, wherein x
摘要翻译： 一种器件包括具有设置在n型区域和p型区域之间的至少一个III-P发光层的半导体结构。 半导体结构还包括GaAs xP 1-x p接触层，其中x <0.45。 第一金属触点与GaAsxP1-x p-接触层直接接触。 第二金属触点电连接到n型区域。 第一和第二金属触点形成在半导体结构的同一侧上。
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公开(公告)号：US08017958B2
公开(公告)日：2011-09-13
申请号：US12494988
申请日：2009-06-30
申请人： Theodore Chung , Anneli Munkholm
发明人： Theodore Chung , Anneli Munkholm
CPC分类号： H01L33/30 , H01L33/02 , H01L33/14 , H01L33/387 , H01L33/405
摘要： A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1−x p-contact layer, wherein x
摘要翻译： 一种器件包括具有设置在n型区域和p型区域之间的至少一个III-P发光层的半导体结构。 半导体结构还包括GaAs xP 1-x p接触层，其中x <0.45。 第一金属触点与GaAsxP1-x p-接触层直接接触。 第二金属触点电连接到n型区域。 第一和第二金属触点形成在半导体结构的同一侧上。
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公开(公告)号：US06989555B2
公开(公告)日：2006-01-24
申请号：US10830202
申请日：2004-04-21
IPC分类号： H01L29/24
摘要： In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.
摘要翻译： 在III族氮化物发光器件中，三元或四元发光层被配置为控制相分离程度。 在一些实施例中，发光层中的任何点处的InN组成与发光层中的平均InN组成之间的差小于20％。 在一些实施方案中，通过控制具有与发光层相同的组成的松弛的独立层中的晶格常数与基极区域中的晶格常数的比例来实现相分离的控制。 例如，该比率可以在约1至约1.01之间。
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公开(公告)号：US08816368B2
公开(公告)日：2014-08-26
申请号：US13204750
申请日：2011-08-08
申请人： Theodore Chung , Anneli Munkholm
发明人： Theodore Chung , Anneli Munkholm
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/02 , H01L33/14 , H01L33/387 , H01L33/405
摘要： A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1-x p-contact layer, wherein x
摘要翻译： 一种器件包括具有设置在n型区域和p型区域之间的至少一个III-P发光层的半导体结构。 半导体结构还包括GaAs xP 1-x p接触层，其中x <0.45。 第一金属触点与GaAsxP1-x p-接触层直接接触。 第二金属触点电连接到n型区域。 第一和第二金属触点形成在半导体结构的同一侧上。
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公开(公告)号：US08692286B2
公开(公告)日：2014-04-08
申请号：US11957031
申请日：2007-12-14
CPC分类号： H01L33/30 , H01L33/0079 , H01L33/025
摘要： In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.
摘要翻译： 在本发明的一些实施例中，透明衬底AlInGaP器件包括可以比常规蚀刻停止层更少吸收的蚀刻停止层。 在本发明的一些实施例中，透明衬底AlInGaP器件包括可被配置为给出比常规接合界面更低的正向电压的接合界面。 降低装置中的吸收和/或正向电压可以提高装置的效率。
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