Invention Grant
- Patent Title: P-contact layer for a III-P semiconductor light emitting device
- Patent Title (中): 用于III-P半导体发光器件的P接触层
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Application No.: US12494988Application Date: 2009-06-30
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Publication No.: US08017958B2Publication Date: 2011-09-13
- Inventor: Theodore Chung , Anneli Munkholm
- Applicant: Theodore Chung , Anneli Munkholm
- Applicant Address: NL Eindhoven US CA San Jose
- Assignee: Koninklijke Philips Electronics N.V.,Philips Lumileds Lighting Co., LLC
- Current Assignee: Koninklijke Philips Electronics N.V.,Philips Lumileds Lighting Co., LLC
- Current Assignee Address: NL Eindhoven US CA San Jose
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00
Abstract:
A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1−x p-contact layer, wherein x
Public/Granted literature
- US20100327299A1 P-CONTACT LAYER FOR A III-P SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2010-12-30
Information query
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