公开(公告)号：US20210147245A1

公开(公告)日：2021-05-20

申请号：US16630608

申请日：2017-07-13

申请人： WACKER CHEMIE AG

发明人： Mikhail SOFIN

IPC分类号： C01B33/18

摘要： An economic process for producing high quality finely divided silicon dioxide from mixtures comprising economical silicon compounds without operational disturbances is characterized by using as an Si source mixture of at least two silicon compounds, at least one being carbon-containing and at least one being carbon-free, supplying a fuel gas and an oxygen-containing source, the molar C/Si ratio of this mixture being between 10/BET and 35/BET, and the molar H/Cl ratio of this mixture being between 0.45+(BET/600) and 0.95+(BET/600), with BET being the specific surface area of the pyrogenic silicon dioxide under production, introducing this mixture as the main flow into a reaction space and igniting and reacting it, and isolating the resulting solid.

公开(公告)号：US20160369393A1

公开(公告)日：2016-12-22

申请号：US15256855

申请日：2016-09-06

申请人： Wacker Chemie AG

发明人： Laszlo FABRY ,  Mikhail SOFIN

IPC分类号： C23C16/22 ,  C23C16/02

CPC分类号： C23C16/22 ,  C01B33/035 ,  C22C28/00 ,  C23C16/0209 ,  C30B13/00 ,  C30B15/02 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  Y10T428/298

摘要： A rod having a length of 0.5 m to 4 m and having a diameter of 25 mm to 220 mm, comprising a high-purity alloy composed of 0.1 to 50 mol % germanium and 99.9 to 50 mol % silicon, the alloy having been deposited on a thin silicon rod or on a thin germanium-alloyed silicon rod, the deposited alloy having a polycrystalline structure.

摘要翻译： 长度为0.5μm至4μm，直径为25mm至220mm的棒，包括由0.1至50mol％的锗和99.9至50mol％的硅组成的高纯度合金，该合金已沉积在 薄硅棒或薄的锗合金硅棒，沉积合金具有多晶结构。

公开(公告)号：US20140105806A1

公开(公告)日：2014-04-17

申请号：US14032261

申请日：2013-09-20

申请人： Wacker Chemie AG

发明人： Mikhail SOFIN

IPC分类号： C01B33/027

CPC分类号： C01B33/027 ,  C01B33/035

摘要： The invention relates to a process for deposition of polycrystalline silicon, including introduction of a reaction gas containing a silicon-containing component and hydrogen into a reactor, as a result of which polycrystalline silicon is deposited in the form of rods, which includes passing into the reactor, after the deposition has ended, a gas which attacks silicon or silicon compounds which flows around the polycrystalline rods and an inner reactor wall in order to dissolve silicon-containing particles which are formed in the course of deposition and adhere on the inner reactor wall or on the polycrystalline silicon rods before the polycrystalline silicon rods are removed from the reactor.

摘要翻译： 本发明涉及沉积多晶硅的方法，包括将含有含硅组分和氢气的反应气体引入反应器，其结果是多晶硅以棒的形式沉积，其中包括进入 反应器，在沉积结束之后，产生一种气体，其攻击围绕多晶棒流动的硅或硅化合物和内部反应器壁，以便溶解在沉积过程中形成的含硅颗粒并粘附在内部反应器壁上 或者在将多晶硅棒从反应器中取出之前的多晶硅棒上。