公开(公告)号：US20170279410A1

公开(公告)日：2017-09-28

申请号：US15620836

申请日：2017-06-13

Applicant: University of Electronic Science and Technology of China

Inventor： Yaxin Zhang ,  Han Sun ,  Yuncheng Zhao ,  Shixiong Liang ,  Ziqiang Yang

IPC: H03C1/36 ,  H01P3/08

CPC classification number: H03C1/36 ,  H01P3/08 ,  H03C7/025

Abstract: A terahertz wave fast modulator based on coplanar waveguide combining with transistor is disclosed. The terahertz waves are inputted through a straight waveguide structure, and then are coupled through a probe structure onto a core part of the present invention, which includes a suspended coplanar waveguide structure and a modulation unit with high electron mobility transistor, wherein the suspended coplanar waveguide structure is formed by three metal wires and a semiconductor substrate; and the modulation unit with high electron mobility transistor is located between adjacent metal transmission strips of the coplanar waveguide structure. Transmission characteristics of the terahertz waves in the coplanar waveguide structure are changed through the switching on/off of the modulation unit, so as to fast modulate the amplitudes and phases of the terahertz waves, and finally the modulated terahertz waves are transmitted through a probe—waveguide structure.

公开(公告)号：US10333468B2

公开(公告)日：2019-06-25

申请号：US15620836

申请日：2017-06-13

Applicant: University of Electronic Science and Technology of China

Inventor： Yaxin Zhang ,  Han Sun ,  Yuncheng Zhao ,  Shixiong Liang ,  Ziqiang Yang

IPC: H01P3/08 ,  H03C1/36

Abstract: A terahertz wave fast modulator based on coplanar waveguide combining with transistor is disclosed. The terahertz waves are inputted through a straight waveguide structure, and then are coupled through a probe structure onto a core part of the present invention, which includes a suspended coplanar waveguide structure and a modulation unit with high electron mobility transistor, wherein the suspended coplanar waveguide structure is formed by three metal wires and a semiconductor substrate; and the modulation unit with high electron mobility transistor is located between adjacent metal transmission strips of the coplanar waveguide structure. Transmission characteristics of the terahertz waves in the coplanar waveguide structure are changed through the switching on/off of the modulation unit, so as to fast modulate the amplitudes and phases of the terahertz waves, and finally the modulated terahertz waves are transmitted through a probe—waveguide structure.

公开(公告)号：US09865692B2

公开(公告)日：2018-01-09

申请号：US15587317

申请日：2017-05-04

Applicant: University of Electronic Science and Technology of China

Inventor： Yaxin Zhang ,  Yuncheng Zhao ,  Shixiong Liang ,  Ziqiang Yang

IPC: H01L29/15 ,  H01L29/417 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/49 ,  H01L29/45 ,  H01L23/66

CPC classification number: H01L29/41758 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/452 ,  H01L29/495 ,  H01L29/778 ,  H01L29/7786 ,  H01L2223/6627

Abstract: A spatial terahertz wave phase modulator based on the high electron mobility transistor is provided. The phase modulator combines the quick-response high electron mobility transistor with a novel metamaterial resonant structure, so as to rapidly modulate terahertz wave phases in a free space. The phase modulator includes a semiconductor substrate, an HEMT epitaxial layer, a periodical metamaterial resonant structure and a muff-coupling circuit. A concentration of 2-dimensional electron gas in the HEMT epitaxial layer is controlled through loading voltage signals, so as to change an electromagnetic resonation mode of the metamaterial resonant structure, thereby achieving phase modulation of terahertz waves. The phase modulator has a phase modulation depth of over 90 degrees within a large bandwidth, and a maximum phase modulation depth is about 140 degrees. Furthermore, the phase modulator is simple in structure, easy to machine, high in modulation speed, convenient to use, and easy to package.

公开(公告)号：US20170236912A1

公开(公告)日：2017-08-17

申请号：US15587317

申请日：2017-05-04

Applicant: University of Electronic Science and Technology of China

Inventor： Yaxin Zhang ,  Yuncheng Zhao ,  Shixiong Liang ,  Ziqiang Yang

IPC: H01L29/417 ,  H01L29/20 ,  H01L23/66 ,  H01L29/49 ,  H01L29/45 ,  H01L29/778 ,  H01L29/205

CPC classification number: H01L29/41758 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/452 ,  H01L29/495 ,  H01L29/778 ,  H01L29/7786 ,  H01L2223/6627

Abstract: A spatial terahertz wave phase modulator based on the high electron mobility transistor is provided. The phase modulator combines the quick-response high electron mobility transistor with a novel metamaterial resonant structure, so as to rapidly modulate terahertz wave phases in a free space. The phase modulator includes a semiconductor substrate, an HEMT epitaxial layer, a periodical metamaterial resonant structure and a muff-coupling circuit. A concentration of 2-dimensional electron gas in the HEMT epitaxial layer is controlled through loading voltage signals, so as to change an electromagnetic resonation mode of the metamaterial resonant structure, thereby achieving phase modulation of terahertz waves. The phase modulator has a phase modulation depth of over 90 degrees within a large bandwidth, and a maximum phase modulation depth is about 140 degrees. Furthermore, the phase modulator is simple in structure, easy to machine, high in modulation speed, convenient to use, and easy to package.