Abstract:
The present invention relates to an integrated device for transmitting and/or receiving information by means of millimetric waves (wavelength 1 mm-10 mm), i.e. electromagnetic waves corresponding to frequencies of 30 to 300 GHz. In particular, the present invention relates to a device constituted by an optoelectronic integrated circuit that interfaces with an antenna able to transmit and/or receive millimetre wave signals. In turn the device, associated to the appropriate biasing and control electronics, constitutes a transceiver module to be used in a wireless or mobile radio local area network. rhe transmitter circuit is constituted by a laser in passive mode-locking. The optical signal thus generated is amplified, modulated and converted into radio frequency signal through a guide photodiode, to be lastly transmitted through an antenna. The receiver circuit is constituted by an antenna, a photodiode and a laser identical to that of the transmitter. The photodiode, by means of appropriate bias, performs a dual function of optical and electrical mixer. In particular, the first function converts to electrical frequency the optical beat signal between two modes generated by the laser, the second function takes place by means of the non linear voltage/current characteristic of the photodiode and allows to bring back to base band the received signal, thereby allowing to extract the modulating signal from the weak signal received through the antenna.
Abstract:
A variable bi-phase modulator circuit for microwave signals includes a quadrature power divider (1) having signal input and output ports (2 and 3) and two control ports (4 and 5), and two variable resistors each having an input port (11). Each of the two variable resistors includes first and second microwave field-effect transistors (F1 and F2), the drains of which are coupled together via an intermediate resistor (R). These resistors can be formed using microwave monolithic integrated circuit technology and can have very good impedance characteristics. The input port (11) of the variable resistor has a connection to the intermediate resistor (R) and to the drain of the first transistor (F2). Each transistor is connected with zero dc bias between its source and drain and has a channel resistance which changes with change in gate voltage (VG1, VG2). A shunt stub (L1, L2) is connected to the drain of each transistor (F1, F2) to at least partially compensate at the frequency of operation of the transistor for the source to drain capacitance and for shifts in reference plane due to changes in the gate voltage of each transistor.
Abstract:
A method and apparatus for modulating or demodulating a radio frequency (RF) signal which incorporates a pair of quadrature couplers. In demodulating an RF signal, an LO signal and the RF signal are each phase shifted -90 degrees by the couplers. The RF and LO signals are mixed as are the phase-shifted RF and LO signals. Each mixed signal is low-pass filtered and the filtered signals are added thereby producing an intermediate frequency signal.
Abstract:
Exemplary embodiments are related to a tri-phase digital polar modulator. A device may include a modulator configured to generate a primary phase modulated signal including the most significant bits (MSBs) of a modulated signal, a leading phase modulated signal including a first least significant bits (LSB) of the modulated signal, and a lagging phase modulated signal including a second LSB of the modulated signal. The device may also include a combination unit configured to add the primary phase modulated signal, the leading phase modulated signal, and the lagging phase modulated signal
Abstract:
A microwave vector modulator (4) of the reflective type is used to match a microwave load. The adjustable reflection of the vector modulator is obtained by semiconducting surfaces (18, 19, 20, 21), illuminated by light-emitting means (24, 25, 26, 27).
Abstract:
A phase switching circuit adapted for high frequency applications which is operative for shifting the phase of an input signal either by 0.degree. or 180.degree. in response to a control signal. The switching circuit includes two FETs which are coupled together so as to operate in combination to produce the desired phase switching action. The first FET comprises a grounded gate amplifier while the second FET may be configured either as an inverting amplifier or a source follower by changing the polarity of the power supply voltage applied to its output terminal. The two FETs operate in a complimentary fashion so as to provide relatively constant amounts of phase shift and gain.
Abstract:
Disclosed is a microwave phase shifter which is capable, in response to a control signal, of generating either a phase shift that is substantially zero or a phase shift that is substantially equal to .pi.. It comprises a FET that is preferably symmetrical and works in an amplifier assembly. Low-frequency switching-over means make it possible, by reversing the biases at the source and the drain, to invert the FET. This inverting causes a phase shift by .pi. in the microwave signal taken at the output of the circuit.