公开(公告)号：US10784153B2

公开(公告)日：2020-09-22

申请号：US16134902

申请日：2018-09-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-How Chou ,  Tzu-Hao Fu ,  Tsung-Yin Hsieh ,  Chih-Sheng Chang ,  Shih-Chun Tsai ,  Kun-Chen Ho ,  Yang-Chou Lin

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A method for fabricating metal interconnect structure includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer on a substrate; forming a cap layer on the first metal interconnection; forming a second IMD layer on the cap layer; performing a first etching process to remove part of the second IMD layer for forming an opening; performing a plasma treatment process; and performing a second etching process to remove polymers from bottom of the opening.

公开(公告)号：US20200058544A1

公开(公告)日：2020-02-20

申请号：US16134902

申请日：2018-09-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-How Chou ,  Tzu-Hao Fu ,  Tsung-Yin Hsieh ,  Chih-Sheng Chang ,  Shih-Chun Tsai ,  Kun-Chen Ho ,  Yang-Chou Lin

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

Abstract: A method for fabricating metal interconnect structure includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer on a substrate; forming a cap layer on the first metal interconnection; forming a second IMD layer on the cap layer; performing a first etching process to remove part of the second IMD layer for forming an opening; performing a plasma treatment process; and performing a second etching process to remove polymers from bottom of the opening.

公开(公告)号：US12183626B2

公开(公告)日：2024-12-31

申请号：US17883647

申请日：2022-08-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-How Chou ,  Tzu-Hao Fu ,  Tsung-Yin Hsieh ,  Chih-Sheng Chang ,  Shih-Chun Tsai ,  Kun-Chen Ho ,  Yang-Chou Lin

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A metal interconnect structure includes a first metal interconnection in an inter-metal dielectric (IMD) layer on a substrate, a second metal interconnection on the first metal interconnection, and a cap layer between the first metal interconnection and the second metal interconnection. Preferably, a top surface of the first metal interconnection is even with a top surface of the IMD layer and the cap layer is made of conductive material.

公开(公告)号：US20220384254A1

公开(公告)日：2022-12-01

申请号：US17883647

申请日：2022-08-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-How Chou ,  Tzu-Hao Fu ,  Tsung-Yin Hsieh ,  Chih-Sheng Chang ,  Shih-Chun Tsai ,  Kun-Chen Ho ,  Yang-Chou Lin

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

Abstract: A metal interconnect structure includes a first metal interconnection in an inter-metal dielectric (IMD) layer on a substrate, a second metal interconnection on the first metal interconnection, and a cap layer between the first metal interconnection and the second metal interconnection. Preferably, a top surface of the first metal interconnection is even with a top surface of the IMD layer and the cap layer is made of conductive material.

公开(公告)号：US11450558B2

公开(公告)日：2022-09-20

申请号：US16992055

申请日：2020-08-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-How Chou ,  Tzu-Hao Fu ,  Tsung-Yin Hsieh ,  Chih-Sheng Chang ,  Shih-Chun Tsai ,  Kun-Chen Ho ,  Yang-Chou Lin

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A method for fabricating metal interconnect structure includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer on a substrate; forming a cap layer on the first metal interconnection; forming a second IMD layer on the cap layer; performing a first etching process to remove part of the second IMD layer for forming an opening; performing a plasma treatment process; and performing a second etching process to remove polymers from bottom of the opening.

公开(公告)号：US20200373198A1

公开(公告)日：2020-11-26

申请号：US16992055

申请日：2020-08-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-How Chou ,  Tzu-Hao Fu ,  Tsung-Yin Hsieh ,  Chih-Sheng Chang ,  Shih-Chun Tsai ,  Kun-Chen Ho ,  Yang-Chou Lin

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A method for fabricating metal interconnect structure includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer on a substrate; forming a cap layer on the first metal interconnection; forming a second IMD layer on the cap layer; performing a first etching process to remove part of the second IMD layer for forming an opening; performing a plasma treatment process; and performing a second etching process to remove polymers from bottom of the opening.