Invention Grant
- Patent Title: Metal interconnect structure having cap layer with different thicknesses and method for fabricating the same
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Application No.: US17883647Application Date: 2022-08-09
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Publication No.: US12183626B2Publication Date: 2024-12-31
- Inventor: Yi-How Chou , Tzu-Hao Fu , Tsung-Yin Hsieh , Chih-Sheng Chang , Shih-Chun Tsai , Kun-Chen Ho , Yang-Chou Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201810933058.X 20180816
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/532
Abstract:
A metal interconnect structure includes a first metal interconnection in an inter-metal dielectric (IMD) layer on a substrate, a second metal interconnection on the first metal interconnection, and a cap layer between the first metal interconnection and the second metal interconnection. Preferably, a top surface of the first metal interconnection is even with a top surface of the IMD layer and the cap layer is made of conductive material.
Public/Granted literature
- US20220384254A1 METAL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-12-01
Information query
IPC分类:
