公开(公告)号：US09922832B1

公开(公告)日：2018-03-20

申请号：US15628753

申请日：2017-06-21

申请人： UNITED MICROELECTRONICS CORP.

发明人： Xiao-Fei Han ,  Ju-Bao Zhang ,  Chao Jiang ,  Hong Liao ,  Wen-Wen Gong

IPC分类号： H01L21/28 ,  H01L29/66

CPC分类号： H01L21/28273 ,  H01L27/11521 ,  H01L27/11548 ,  H01L29/66825

摘要： A manufacturing method of a semiconductor structure is provided. The manufacturing method of the semiconductor structure includes the following steps: providing a semiconductor substrate, wherein the semiconductor substrate has a first region and a second region surrounding the first region; forming a gate stack and a dummy gate stack in the first region, wherein the dummy gate stack surrounds the gate stack; forming an oxide layer on an exterior wall and a top surface of the dummy gate stack; forming a dummy conductive layer on the gate stack, the dummy gate stack and the oxide layer, wherein the dummy conductive layer has a concave bowl-shaped top surface in the first region; and performing a chemical mechanical polishing (CMP) process on the dummy conductive layer.