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公开(公告)号：US11504812B2
公开(公告)日：2022-11-22
申请号：US16707133
申请日：2019-12-09
发明人： Ying-Cheng Wang , Zhong-Zheng Huang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： B23K26/402 , G01J5/08 , B23K26/00 , B23K26/10 , B23K26/082 , B23K103/00 , B23K101/36
摘要： A method for making an infrared light absorber is provided, and the method includes following steps: providing a first carbon nanotube array on a substrate; truncating the carbon nanotube array by irradiating a top surface of the carbon nanotube array by a laser beam in two directions, the top surface being away from the substrate, wherein the two directions being at an angle, the angle is in a range of 30 degrees to 90 degrees.
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公开(公告)号：US10483472B2
公开(公告)日：2019-11-19
申请号：US15846213
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
摘要： A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating substrate. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.
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公开(公告)号：US10381585B2
公开(公告)日：2019-08-13
申请号：US15846215
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
摘要： A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.
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公开(公告)号：US10347854B2
公开(公告)日：2019-07-09
申请号：US15817534
申请日：2017-11-20
发明人： Yu-Dan Zhao , Yu-Jia Huo , Xiao-Yang Xiao , Ying-Cheng Wang , Tian-Fu Zhang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L51/05 , H01L29/786 , H01L21/285 , H01L27/12 , H01L27/32 , H01L51/00 , H01L29/16 , H01L29/24 , H03K19/094 , H01L27/06
摘要： The disclosure relates to a logic circuit. The logic circuit includes two ambipolar thin film transistors. Each of the two ambipolar thin film transistors includes a substrate; a semiconductor layer located on the substrate and including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are located on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer located on the substrate and covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The two ambipolar thin film transistors share the same substrate, the same gate, and the same drain.
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公开(公告)号：US11264516B2
公开(公告)日：2022-03-01
申请号：US15846218
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L29/06 , H01L29/08 , H01L29/872 , H01L51/05 , H01L51/00 , H01L51/10 , H01L29/24 , H01L29/417 , H01L29/49 , B82Y10/00 , H01L29/775
摘要： A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a nano-scale semiconductor structure. The second electrode is located on the second end.
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公开(公告)号：US10680119B2
公开(公告)日：2020-06-09
申请号：US16239580
申请日：2019-01-04
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L29/87 , H01L29/66 , H01L51/00 , H01L29/872 , H01L29/24 , H01L29/20 , H01L29/16 , H01L29/04 , H01L51/05 , H01L21/28 , H01L29/06 , B82Y10/00 , H01L29/49 , H01L29/786 , H01L29/47 , H01L29/775
摘要： A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode; the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.
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公开(公告)号：US10374180B2
公开(公告)日：2019-08-06
申请号：US15846217
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L29/06 , H01L29/16 , H01L29/20 , H01L29/24 , H01L29/49 , H01L51/00 , H01L51/05 , H01L51/10 , H01L29/417 , H01L29/775 , H01L29/872 , B82Y10/00
摘要： A thin film transistor includes a gate, an insulating medium layer and a Schottky diode. The Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode is located on the surface of the insulating medium layer and includes a first metal layer and a second metal layer. The second electrode is located on the surface of the insulating medium layer and includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a carbon nanotube structure.
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公开(公告)号：US10217833B2
公开(公告)日：2019-02-26
申请号：US15846221
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L29/47 , H01L29/04 , H01L29/06 , H01L29/16 , H01L29/20 , H01L29/24 , H01L29/49 , H01L29/78 , H01L29/87 , H01L51/00 , H01L51/05 , H01L29/872 , H01L29/786
摘要： A thin film transistor includes a gate, an insulating medium layer and a Schottky diode. The Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode is located on the surface of the insulating medium layer and includes a first metal layer and a second metal layer. The second electrode is located on the surface of the insulating medium layer and includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a nano-scale semiconductor structure.
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公开(公告)号：US11602741B2
公开(公告)日：2023-03-14
申请号：US17398412
申请日：2021-08-10
发明人： Ying-Cheng Wang , Yuan-Hao Jin , Xiao-Yang Xiao , Tian-Fu Zhang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： B01J35/00 , B01J21/18 , B01J23/52 , B01J23/50 , B01J23/72 , B01J23/745 , B01J23/755 , B01J21/02 , B01J21/06 , B01J23/06 , B01J23/14 , B01J27/04 , B01J37/02 , B01J37/08 , B01J37/34 , C25B1/55
摘要： The disclosure relates to a method for making a photocatalytic structure, the method comprising: providing a carbon nanotube structure comprising a plurality of carbon nanotubes intersected with each other; a plurality of openings being defined by the plurality of carbon nanotubes; forming a photocatalytic active layer on the surface of the carbon nanotube structure; applying a metal layer pre-form on the surface of the photocatalytic active layer; and annealing the metal layer pre-form.
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公开(公告)号：US11255731B2
公开(公告)日：2022-02-22
申请号：US16707143
申请日：2019-12-09
发明人： Ying-Cheng Wang , Zhong-Zheng Huang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
摘要： An infrared detector is provided, and the infrared detector includes: a thermoelectric element; an infrared light absorber, located on and in contact with the thermoelectric element, and configured to absorb infrared light and convert infrared light into heat; an electrical signal detector, electrically connected to the thermoelectric element and configured to detect a change in electrical performance of the thermoelectric element; wherein the infrared light absorber includes a carbon nanotube array, the carbon nanotube array includes a plurality of carbon nanotubes, a height of the plurality of carbon nanotubes are substantially the same, and the plurality of carbon nanotubes are perpendicular to the thermoelectric element.
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