公开(公告)号：US20210301402A1

公开(公告)日：2021-09-30

申请号：US17265288

申请日：2019-07-29

Applicant: Tokyo Electron Limited

Inventor： Yusuke SUZUKI ,  Tsuyoshi MORIYA ,  Tadashi MITSUNARI ,  Shinya IWASHITA ,  Yoshinori MORISADA ,  Naotaka NORO ,  Munehito KAGAYA ,  Satoshi TANAKA

IPC: C23C16/52 ,  C23C16/50 ,  C23C16/455

Abstract: A film forming apparatus includes: a processing container; a support mechanism configured to support a substrate to be capable of being raised and lowered; a first gas supplier configured to supply a first gas to a front surface of the substrate supported on the support mechanism; a second gas supplier configured to supply a second gas to a rear surface of the substrate supported on the support mechanism; and a third gas supplier configured to supply a third gas to at least one of the front surface and the rear surface of the substrate supported on the support mechanism.

公开(公告)号：US20240087883A1

公开(公告)日：2024-03-14

申请号：US18271898

申请日：2022-01-11

Applicant: Tokyo Electron Limited

Inventor： Nobuo MATSUKI ,  Yoshinori MORISADA ,  Daisuke OBA

IPC: H01L21/02

CPC classification number: H01L21/02211 ,  H01L21/0217 ,  H01L21/02274

Abstract: A method for forming a silicon-containing film in a recess formed on a surface of a substrate, the method includes: (a) forming a flowable film in the recess by exposing the substrate, which is adjusted to a first temperature, to plasma generated from a processing gas including a halogen-containing silane: and (b) curing the flowable film by thermally processing the substrate at a second temperature higher than the first temperature.

公开(公告)号：US20250166990A1

公开(公告)日：2025-05-22

申请号：US18841870

申请日：2023-02-20

Applicant: Tokyo Electron Limited

Inventor： Daisuke OBA ,  Nobuo MATSUKI ,  Yoshinori MORISADA

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/56

Abstract: A method of forming an insulating film includes supplying a precursor gas to a substrate to generate a fluidic oligomer by plasma polymerization and deposit the fluidic oligomer on the substrate, performing a plasma process on the substrate after the depositing the fluidic oligomer, so that at least a part of the fluidic oligomer is hydrogen-terminated while maintaining fluidity of the fluidic oligomer, and subsequently performing an annealing process, which includes a plasma process, on the substrate to form the insulating film.

公开(公告)号：US20250144667A1

公开(公告)日：2025-05-08

申请号：US18920078

申请日：2024-10-18

Applicant: Tokyo Electron Limited

Inventor： Daisuke OBA ,  Nobuo MATSUKI ,  Yoshinori MORISADA

IPC: B05D1/00

Abstract: A substrate-processing method includes a) forming a flowable oligomer on a substrate, the flowable oligomer containing carbon; and b) exposing the substrate to a plasma of a modification gas containing carbon and hydrogen, thereby modifying the flowable oligomer and forming a carbon-containing film.

公开(公告)号：US20240321571A1

公开(公告)日：2024-09-26

申请号：US18609278

申请日：2024-03-19

Applicant: Tokyo Electron Limited

Inventor： Daisuke OBA ,  Masafumi ISHIDA ,  Nobuo MATSUKI ,  Yoshinori MORISADA

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32449 ,  H01J37/32816 ,  H01J2237/3321 ,  H01J2237/3382 ,  H01L21/0234

Abstract: A method of forming an insulating film on a substrate having a recess, includes preparing the substrate inside a chamber of a processing apparatus, forming a flowable oligomer film on the substrate by supplying a processing gas containing a raw material gas and a diluent gas into the chamber and generating a flowable oligomer by plasma polymerization, controlling an interior of the chamber to have a pressure equal to or lower than a vapor pressure of the flowable oligomer to partially vaporize and remove the flowable oligomer film, and forming the insulating film in the recess by supplying energy to the substrate to cure the flowable oligomer.

公开(公告)号：US20230295797A1

公开(公告)日：2023-09-21

申请号：US18042833

申请日：2021-08-12

Applicant: Tokyo Electron Limited

Inventor： Nobuo MATSUKI ,  Yoshinori MORISADA ,  Takayuki KOMIYA ,  Satoru KAWAKAMI ,  Taro IKEDA ,  Toshihiko IWAO

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/509 ,  C23C16/52

CPC classification number: C23C16/345 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/509 ,  C23C16/52

Abstract: A film forming method forms a film on a substrate by plasma in a processing container including a stage configured to hold the substrate thereon, wherein the film forming method includes: (a) a step of supplying a raw material gas and a reaction gas as a processing gas to the processing container; and (b) a step of generating plasma of the processing gas using a radio-frequency power of 100 MHz or higher.

公开(公告)号：US20200370172A1

公开(公告)日：2020-11-26

申请号：US16881787

申请日：2020-05-22

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi MORIYA ,  Tadahiro ISHIZAKA ,  Yoshinori MORISADA

IPC: C23C16/27 ,  H01L21/311 ,  C23C16/455

Abstract: In a hard mask formed on a target film formed on a substrate, a first film having a stress in a first direction and a second film having a stress in a second direction opposite to the first direction are alternately stacked one or more times.

公开(公告)号：US20240240324A1

公开(公告)日：2024-07-18

申请号：US18615192

申请日：2024-04-04

Applicant: Tokyo Electron Limited ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Masaru HORI ,  Makoto SEKINE ,  Hirotsugu SUGIURA ,  Tsuyoshi MORIYA ,  Satoshi TANAKA ,  Yoshinori MORISADA

IPC: C23C16/52 ,  C23C16/26 ,  H01J37/32 ,  H01L21/033

CPC classification number: C23C16/52 ,  C23C16/26 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/0332 ,  H01J2237/332

Abstract: According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)≥0.5.

公开(公告)号：US20150240121A1

公开(公告)日：2015-08-27

申请号：US14632311

申请日：2015-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kippei SUGITA ,  Tatsuya YAMAGUCHI ,  Yoshinori MORISADA ,  Makoto FUJIKAWA

IPC: C09D179/08 ,  C23C16/52 ,  C23C16/455 ,  C23C16/46 ,  C23C16/44

CPC classification number: C09D179/08 ,  B05D1/60 ,  B05D3/0254 ,  C08G73/105 ,  C08G73/1071 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02063 ,  H01L21/3065 ,  H01L21/31058 ,  H01L21/67109

Abstract: A method for improving a chemical resistance of a polymerized film, which is formed on a surface of a target object and to be processed by a chemical, includes: consecutively performing a treatment for improving the chemical resistance of the polymerized film subsequent to formation of the polymerized film within a processing chamber of a film forming apparatus where the polymerized film is formed, without unloading the target object from the processing chamber.

Abstract translation: 用于提高形成在目标物体的表面上并由化学品加工的聚合膜的耐药性的方法包括：连续地进行用于提高形成后的聚合膜的耐化学性的处理 在其中形成聚合膜的成膜设备的处理室内，不从处理室卸载目标物体。

公开(公告)号：US20150232702A1

公开(公告)日：2015-08-20

申请号：US14619375

申请日：2015-02-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuya YAMAGUCHI ,  Yoshinori MORISADA

IPC: C09D183/14 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  C23C16/44

CPC classification number: C09D183/14 ,  B05D1/34 ,  B05D1/60 ,  C08G77/54

Abstract: A polymerized film forming method for forming a polymerized film on a target surface of a workpiece using a first raw material gas which contains a first monomer and a second raw material gas which contains a second monomer differing from the first monomer includes: supplying the first raw material gas wherein difunctional non-aromatic amine having a hydrolyzable group is used for the first monomer; and supplying the second raw material gas wherein difunctional acid anhydride is used for the second monomer.

Abstract translation: 使用包含第一单体的第一原料气体和含有与第一单体不同的第二单体的第二原料气体，在工件的目标表面上形成聚合膜的聚合膜形成方法包括：供给第一原料 其中具有可水解基团的双官能非芳族胺用于第一单体的原料气体; 并且供给第二原料气体，其中二官能酸酐用于第二单体。