公开(公告)号：US20190304760A1

公开(公告)日：2019-10-03

申请号：US16372452

申请日：2019-04-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akiyoshi MITSUMORI ,  Shin YAMAGUCHI

IPC: H01J37/32 ,  H01L21/683

Abstract: A temperature adjustment method according to one exemplary embodiment is a temperature adjustment method of adjusting a temperature of a loading table on which a workpiece is loaded using a refrigerant. The step of increasing the temperature of the loading table includes a step of adjusting the temperature of the loading table to a first temperature by opening an expansion valve between an output terminal of a condenser and an input terminal of a heat exchange unit and adjusting an opening degree of the expansion valve, and a step of adjusting the temperature of the loading table to a second temperature by opening the expansion valve, inputting heat to the loading table, opening a flow dividing valve between an output terminal of a compressor and the input terminal of the heat exchange unit, and adjusting an opening degree of the flow dividing valve.

公开(公告)号：US20180350561A1

公开(公告)日：2018-12-06

申请号：US15987110

申请日：2018-05-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shin YAMAGUCHI ,  Akiyoshi MITSUMORI

IPC: H01J37/32 ,  H02N13/00 ,  H01L21/683 ,  C23C16/458

CPC classification number: H01J37/32449 ,  C23C16/4586 ,  H01J37/3255 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H02N13/00

Abstract: An electrostatic chuck of an embodiment includes a base, a dielectric layer, and a chuck main body. The dielectric layer is provided on the base, and is fixed to the base. The chuck main body is mounted on the dielectric layer. The chuck main body has a ceramic main body, a first electrode, a second electrode, and a third electrode. The ceramic main body has a substrate mounting region. The first electrode is provided in the substrate mounting region. The second electrode and the third electrode form a bipolar electrode. The second electrode and the third electrode are provided in the ceramic main body, and are provided between the first electrode and the dielectric layer.

公开(公告)号：US20250132136A1

公开(公告)日：2025-04-24

申请号：US18999446

申请日：2024-12-23

Applicant: Tokyo Electron Limited

Inventor： Hajime TAMURA ,  Yasuharu SASAKI ,  Shin YAMAGUCHI ,  Tsuguto SUGAWARA ,  Katsuyuki KOIZUMI

IPC: H01J37/32 ,  H02N13/00

Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.

公开(公告)号：US20240339303A1

公开(公告)日：2024-10-10

申请号：US18749678

申请日：2024-06-21

Applicant: Tokyo Electron Limited

Inventor： Shin YAMAGUCHI ,  Daiki SATOH ,  Takashi KANAZAWA ,  Makoto KATO

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/2007

Abstract: A substrate support comprises an electrostatic chuck configured to support a substrate and an edge ring and a base configured to support the electrostatic chuck. The electrostatic chuck includes a first region having a first upper surface and configured to support a substrate placed on the first upper surface, a second region having a second upper surface and configured to support an edge ring placed on the second upper surface, a first electrode disposed in the first region and to which a DC voltage is applied, a second electrode disposed below the first electrode and to which a first bias power is supplied, a third electrode disposed below the second electrode and to which the first bias power is supplied and a first gas supply line disposed between the second electrode and the third electrode.

公开(公告)号：US20220415693A1

公开(公告)日：2022-12-29

申请号：US17846605

申请日：2022-06-22

Applicant: Tokyo Electron Limited

Inventor： Hideto SAITO ,  Makoto KATO ,  Shin YAMAGUCHI ,  Takashi KANAZAWA ,  Ryoma MUTO

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate support includes an electrostatic chuck formed of ceramics and holding a substrate by electrostatic attraction, a base supporting the electrostatic chuck, and a flow path through which a heat exchange medium flows. An upper surface of the flow path is formed of ceramics.

公开(公告)号：US20220285138A1

公开(公告)日：2022-09-08

申请号：US17653165

申请日：2022-03-02

Applicant: Tokyo Electron Limited

Inventor： Shin YAMAGUCHI ,  Yasuharu SASAKI ,  Koei ITO

IPC: H01J37/32 ,  H01L21/683

Abstract: A substrate support includes a base, a substrate support layer disposed on the base, the substrate support layer being formed of an insulating material, and an electrostatic internal electrode layer disposed in the substrate support layer, the electrostatic internal electrode layer including a body portion and a plurality of protruding portions, the body portion having a circular shape in a plan view, and the plurality of protruding portions radially protruding from the body portion.

公开(公告)号：US20250140535A1

公开(公告)日：2025-05-01

申请号：US19010578

申请日：2025-01-06

Applicant: Tokyo Electron Limited

Inventor： Takashi KANAZAWA ,  Shin YAMAGUCHI ,  Makoto KATO ,  Ryoma MUTO

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a plasma processing chamber, a base arranged inside the plasma processing chamber, and an electrostatic chuck arranged on the base and having a substrate support surface and a ring support surface. The electrostatic chuck is configured to include a plurality of heat-transfer gas supply holes formed in the substrate support surface, an annular seal band formed on the substrate support surface around an outer periphery of the plurality of heat-transfer gas supply holes so as to surround the plurality of heat-transfer gas supply holes, and at least one first protrusion formed on the substrate support surface between a first heat-transfer gas supply hole closest to the seal band among the plurality of heat-transfer gas supply holes and the seal band.

公开(公告)号：US20240194457A1

公开(公告)日：2024-06-13

申请号：US18582163

申请日：2024-02-20

Applicant: Tokyo Electron Limited

Inventor： Hajime TAMURA ,  Yasuharu SASAKI ,  Shin YAMAGUCHI ,  Tsuguto SUGAWARA ,  Katsuyuki KOIZUMI

IPC: H01J37/32 ,  H02N13/00

CPC classification number: H01J37/32715 ,  H01J37/32082 ,  H01J37/32642 ,  H02N13/00 ,  H01J2237/2007 ,  H01J2237/334

Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.

公开(公告)号：US20240153749A1

公开(公告)日：2024-05-09

申请号：US18415667

申请日：2024-01-18

Applicant: Tokyo Electron Limited

Inventor： Yasuharu SASAKI ,  Tsuguto SUGAWARA ,  Shin YAMAGUCHI ,  Hajime TAMURA

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01J37/32715 ,  H01J37/32091 ,  H01J37/32211 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32642 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68721

Abstract: A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

公开(公告)号：US20140202635A1

公开(公告)日：2014-07-24

申请号：US14160735

申请日：2014-01-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shin YAMAGUCHI ,  Daisuke HAYASHI ,  Yasuhisa KUDO

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/683

CPC classification number: H01L21/68742 ,  H01J37/32715 ,  H01J37/32733 ,  H01L21/6831 ,  Y10T279/23

Abstract: A mounting table includes an electrostatic chuck having a mounting surface and a backside opposite to the mounting surface, a first through hole being formed in the mounting table; a base joined to the backside of the electrostatic chuck and having a second through hole in communication with the first through hole; a lifter pin which is received in a pin hole formed by the first through hole and the second through hole, the lifter pin being movable up and down to protrude beyond and retract below the mounting surface. An upper end portion of the lifter pin has a shape in which a diameter decreases toward a lower end of the lifter pin to correspond to a shape of the upper end portion of the pin hole. The upper end portion of the lifter pin is in surface contact with the upper end portion of the pin hole.

Abstract translation: 安装台包括具有安装表面和与安装表面相对的后侧的静电卡盘，在安装台上形成有第一通孔; 连接到所述静电卡盘的背面并具有与所述第一通孔连通的第二通孔的基座; 收纳在由所述第一通孔和所述第二通孔形成的销孔中的升降销，所述升降销可上下移动，突出超过所述安装面的下方。 提升销的上端部具有直径朝向升降销的下端减小的形状，以对应于销孔的上端部的形状。 升降销的上端部与销孔的上端部表面接触。