公开(公告)号：US20210344288A1

公开(公告)日：2021-11-04

申请号：US17240195

申请日：2021-04-26

Applicant: Tokyo Electron Limited

Inventor： Hideto SAITO

IPC: H02N13/00 ,  F28F27/00

Abstract: A substrate processing apparatus includes a stage on which a substrate is placed, wherein the stage includes a first plate, a first temperature adjustment mechanism configured to control a temperature of the first plate, a second plate provided below the first plate, a second temperature adjustment mechanism configured to control a temperature of the second plate, and a fastening member configured to fasten the first plate and the second plate.

公开(公告)号：US20210207283A1

公开(公告)日：2021-07-08

申请号：US17169593

申请日：2021-02-08

Applicant: Yamaguchi Prefectural Industrial Technology Institute ,  Shimonoseki Mekki Co., Ltd. ,  Tokyo Electron Limited

Inventor： Takehiko MURANAKA ,  Kouji NIIMI ,  Yuuta UENO ,  Hikaru KIKUCHI ,  Hideto SAITO ,  Nobuyuki NAGAYAMA

IPC: C25D11/26 ,  H01L21/67 ,  H01L21/683 ,  H01J37/32

Abstract: An anodized titanium material includes a titanium base material and an anodized titanium layer. The anodized titanium layer is provided on a surface of the titanium base material. The anodized titanium layer includes a porous first anodized titanium layer. The anodized titanium layer has a withstand voltage at 25° C. of 500 V or more, a Vickers hardness of 200 or more, a film thickness of 20 μm or more and less than 80 μm, an arithmetic average roughness Ra of a surface of less than 1.6 μm, and a maximum height roughness Rz of the surface is less than 6.3 μm. In both of a section perpendicular to a thickness direction of the first anodized titanium oxide layer and the surface, no pore sections having a shape capable of including a circle having a diameter of 0.5 μm or more are observed.

公开(公告)号：US20220415693A1

公开(公告)日：2022-12-29

申请号：US17846605

申请日：2022-06-22

Applicant: Tokyo Electron Limited

Inventor： Hideto SAITO ,  Makoto KATO ,  Shin YAMAGUCHI ,  Takashi KANAZAWA ,  Ryoma MUTO

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate support includes an electrostatic chuck formed of ceramics and holding a substrate by electrostatic attraction, a base supporting the electrostatic chuck, and a flow path through which a heat exchange medium flows. An upper surface of the flow path is formed of ceramics.

公开(公告)号：US20210143044A1

公开(公告)日：2021-05-13

申请号：US17088123

申请日：2020-11-03

Applicant: Tokyo Electron Limited

Inventor： Shinsuke OKA ,  Kenya IWASAKI ,  Hideto SAITO

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: A plasma processing apparatus includes: a vacuumable processing container; a lower electrode provided inside the processing container and for placing a substrate thereon; an edge ring arranged to surround a periphery of the substrate; an electrostatic chuck provided on the lower electrode to attract the substrate and the edge ring; a heat-transfer-gas supply part for supplying a heat transfer gas between the electrostatic chuck and the edge ring through one or more first through-holes respectively formed in the lower electrode and the electrostatic chuck; and a heat-transfer-gas exhaust part for exhausting the heat transfer gas between the electrostatic chuck and the edge ring through one or more second through-holes respectively formed in the lower electrode and the electrostatic chuck. Electrostatic chuck openings of the second through-holes are formed radially inward of those of the first through-holes between the electrostatic chuck and the edge ring.