SUBSTRATE PROCESSING APPARATUS AND ELECTROSTATIC CHUCK

    公开(公告)号:US20250140535A1

    公开(公告)日:2025-05-01

    申请号:US19010578

    申请日:2025-01-06

    Abstract: A substrate processing apparatus includes a plasma processing chamber, a base arranged inside the plasma processing chamber, and an electrostatic chuck arranged on the base and having a substrate support surface and a ring support surface. The electrostatic chuck is configured to include a plurality of heat-transfer gas supply holes formed in the substrate support surface, an annular seal band formed on the substrate support surface around an outer periphery of the plurality of heat-transfer gas supply holes so as to surround the plurality of heat-transfer gas supply holes, and at least one first protrusion formed on the substrate support surface between a first heat-transfer gas supply hole closest to the seal band among the plurality of heat-transfer gas supply holes and the seal band.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE SUPPORT

    公开(公告)号:US20240258083A1

    公开(公告)日:2024-08-01

    申请号:US18423391

    申请日:2024-01-26

    Abstract: There is a substrate processing apparatus comprising: a processing chamber; a substrate support disposed in the chamber; and a power supply configured to supply a radio frequency (RF) power to at least the substrate support, wherein the substrate support includes: an electrostatic chuck that is made of ceramic and holds a substrate by electrostatic attraction; a base that has a channel through which a heat exchange medium flows and supports the electrostatic chuck; a low linear expansion coefficient member disposed between the electrostatic chuck and the base; a heat transfer sheet disposed between the low linear expansion coefficient member and the base; a fixing part configured to fix the heat transfer sheet to the low linear expansion coefficient member; and a conductive member that is disposed between the low linear expansion coefficient member and the base and electrically connects the low linear expansion coefficient member and the base.

Patent Agency Ranking