摘要:
System and method for manufacturing three-dimensional integrated circuits are disclosed. In one embodiment, the method includes providing an imaging writer system that includes a plurality of spatial light modulator (SLM) imaging units arranged in one or more parallel arrays, receiving mask data to be written to one or more layers of the three-dimensional integrated circuit, processing the mask data to form a plurality of partitioned mask data patterns corresponding to the one or more layers of the three-dimensional integrated circuit, assigning one or more SLM imaging units to handle each of the partitioned mask data pattern, and controlling the plurality of SLM imaging units to write the plurality of partitioned mask data patterns to the one or more layers of the three-dimensional integrated circuits in parallel. The method of assigning performs at least one of scaling, alignment, inter-ocular displacement, rotational factor, or substrate deformation correction.
摘要:
A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.
摘要:
A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).
摘要:
A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
摘要:
Disclosed concepts include a method of, and program product for, optimizing an intensity profile of a pattern to be formed in a surface of a substrate relative to a given mask using an optical system. Steps include mathematically representing resolvable feature(s) from the given mask, generating a mathematical expression, an eigenfunction, representing certain characteristics of the optical system, modifying the mathematical the eigenfunction by filtering, generating an interference map in accordance with the filtered eigenfunction and the mathematical expression of the given mask, and determining assist features for the given mask based on the interference map. As a result, undesired printing in the surface of the substrate may be minimized.
摘要:
A method for minimizing rippling of features when imaged on a surface of a substrate using a mask. The method includes the steps of determining a deviation between a first representation of the design and a second representation of an image of the design at each of a plurality of evaluation points for each section of a plurality of sections of the design; determining an amount of modification of the design at each section based on an evaluation of the plurality of evaluation points; and modifying the design at each section by the amount determined in the previous step.
摘要:
Disclosed concepts include a method of, and program product for, optimizing an intensity profile of a pattern to be formed in a surface of a substrate relative to a given mask using an optical system. Steps include mathematically representing resolvable feature(s) from the given mask, generating a mathematical expression, an eigenfunction, representing certain characteristics of the optical system, modifying the mathematical the eigenfunction by filtering, generating an interference map in accordance with the filtered eigenfunction and the mathematical expression of the given mask, and determining assist features for the given mask based on the interference map. As a result, undesired printing in the surface of the substrate may be minimized.
摘要:
A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).
摘要:
System and method for handling substrates in a lithography manufacturing process are disclosed. In one embodiment, a system for handling substrates in a lithography manufacturing process includes a plurality of porous chucks positioned above a substrate for imaging, a plurality of pressure sources configured to apply pressured air towards the substrate through the plurality of porous chucks, a plurality of vacuums configured to apply suction force away from the substrate, and a controller with control logic configured to hold the substrate in place by controlling the pressured air applied by the plurality of pressure sources and the suction force generated by the plurality of vacuums.
摘要:
System and method for processing image data between adjacent imaging areas in a lithography manufacturing process are disclosed. In one embodiment, the method includes providing a parallel imaging writer system which has a plurality of spatial light modulator (SLM) imaging units arranged in one or more parallel arrays, receiving a mask data pattern to be written to a substrate, processing the mask data pattern to form a plurality of partitioned mask data patterns corresponding to different areas of the substrate, identifying an overlapping region between adjacent imaging areas to be imaged by corresponding SLMs, determining a stitching path for merging the adjacent imaging areas in the overlapping region in accordance with a set of predetermined cost functions, and controlling the plurality of SLM imaging units to write the plurality of partitioned mask data patterns to the substrate in parallel using the stitching path.