Tunable semiconductor laser
    2.
    发明授权
    Tunable semiconductor laser 失效
    可调谐半导体激光器

    公开(公告)号:US4395769A

    公开(公告)日:1983-07-26

    申请号:US240206

    申请日:1981-03-03

    摘要: Tunable laser radiation is obtained by pumping a wedge-shaped ultra-short laser cavity with picosecond excitation pulses. Continuous tuning of the laser is achieved by translating either the wedge-shaped laser cavity or the excitation pulses so that different volumes of the laser material are exposed to the excitation pulses. In one embodiment utilizing picosecond laser excitation pulses the wedge-shaped laser cavity is a slightly wedged film of GaAs coated on both sides with dielectric mirrors.

    摘要翻译: 通过用皮秒激发脉冲泵浦楔形超短激光腔来获得可调谐的激光辐射。 通过平移楔形激光腔或激发脉冲来实现激光的连续调谐,使激光材料的不同体积暴露于激发脉冲。 在使用皮秒激光激发脉冲的一个实施例中,楔形激光器腔是在两侧具有电介质反射镜的稍微楔形的GaAs膜。

    Surface emitting laser having improved pumping efficiency
    3.
    发明授权
    Surface emitting laser having improved pumping efficiency 失效
    具有提高泵送效率的表面发射激光器

    公开(公告)号:US5513203A

    公开(公告)日:1996-04-30

    申请号:US417308

    申请日:1995-04-05

    申请人: Theodoor C. Damen

    发明人: Theodoor C. Damen

    摘要: In accordance with the present invention, a surface emitting laser includes a substrate, a first distributed feedback mirror formed on the substrate, and an active gain medium formed on the first mirror. The active gain medium includes at least one active, optically emitting layer and one barrier layer. A second distributed feedback mirror is formed on the active gain medium. The first and second mirrors define a resonant cavity for supporting a standing wave optical field at a designed wavelength of operation The first and second mirrors have first and second reflective bandwidths that respectively include first and second transmissive bandwidths for receiving optical pumping energy. The first and second reflective bandwidths are shifted in wavelength relative to one another so that the first and second transmissive bandwidths are located at distinct wavelengths.

    摘要翻译: 根据本发明,表面发射激光器包括基板,形成在基板上的第一分布反馈反射镜和形成在第一反射镜上的有源增益介质。 有源增益介质包括至少一个有源光发射层和一个势垒层。 在主动增益介质上形成第二分布式反馈镜。 第一和第二反射镜限定用于在设计的操作波长处支撑驻波光场的谐振腔。第一和第二反射镜具有分别包括用于接收光泵浦能量的第一和第二透射带宽的第一和第二反射带宽。 第一和第二反射带宽相对于彼此在波长上移位,使得第一和第二透射带宽位于不同的波长。

    Generation of tunable far-infrared radiation
    4.
    发明授权
    Generation of tunable far-infrared radiation 失效
    生成可调远红外辐射

    公开(公告)号:US4128772A

    公开(公告)日:1978-12-05

    申请号:US865434

    申请日:1977-12-29

    IPC分类号: G02F1/35 H03F7/00

    CPC分类号: G02F1/3534

    摘要: A tunable far infrared generator makes use of a four-photon mixing process that cycles among highly excited atomic states, the lowest of which states is reached from the atomic ground state by a visible or ultraviolet photon, and the remainder of which states are connected by transitions in the infrared.

    摘要翻译: 可调谐远红外发生器利用在高激发原子态之间循环的四光子混合过程,其中最低的原子状态通过可见光或紫外光子从原子基态达到,其余状态通过 红外线过渡。

    High speed light modulator using multiple quantum well structures
    6.
    发明授权
    High speed light modulator using multiple quantum well structures 失效
    使用多个量子阱结构的高速光调制器

    公开(公告)号:US4525687A

    公开(公告)日:1985-06-25

    申请号:US558545

    申请日:1983-12-02

    IPC分类号: G02F1/017 H01S5/34 G02B5/14

    CPC分类号: B82Y20/00 G02F1/017 H01S5/34

    摘要: A semiconductor apparatus is provided. The apparatus has a multiple layer heterostructure having first and second material layers having first and second bandgaps, respectively and a semiconductor layer of a third bandgap being fabricated between said material layers, the bottom of the conduction band of said semiconductor layer is below the bottom of the conduction band of said material layers, and the top of the valence band of said semiconductor layer is above the top of the valence band of said material layers, the thickness of said semiconductor layer is chosen sufficient for carrier confinement effects within said semiconductor layer to influence the optical properties of said multiple layer heterostructure, and means for applying an electric field to the multiple layer heterostructure in order to vary an optical absorption coefficient and an index of refraction of the multiple layer heterostructure in response to the electric field. The apparatus is adapted for use as an optical absorption modulator or optical phase modulator, or as an electrically tuned Fabry-Perot cavity or as a polarization modulator, or as a nonlinear or bistable apparatus in which the operating point is varied by application of an electric field.

    摘要翻译: 提供一种半导体装置。 该装置具有多层异质结构,其具有分别具有第一和第二带隙的第一和第二材料层,并且在所述材料层之间制造第三带隙的半导体层,所述半导体层的导带的底部低于 所述材料层的导带和所述半导体层的价带的顶部高于所述材料层的价带的顶部,所述半导体层的厚度被选择为足以用于在所述半导体层内的载流子约束效应 影响所述多层异质结构的光学性质,以及用于向多层异质结构施加电场以便响应于电场改变多层异质结构的光吸收系数和折射率的装置。 该装置适合用作光吸收调制器或光相位调制器,或用作电调制的法布里 - 珀罗腔或作为偏振调制器,或者用作非线性或双稳态装置,其中工作点通过施加电 领域。