Invention Grant
- Patent Title: Semiconductor laser having broadband laser gain
- Patent Title (中): 半导体激光器具有宽带激光增益
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Application No.: US240205Application Date: 1981-03-03
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Publication No.: US4378599APublication Date: 1983-03-29
- Inventor: Theodoor C. Damen , Michel A. Duguay , Julian Stone
- Applicant: Theodoor C. Damen , Michel A. Duguay , Julian Stone
- Applicant Address: NJ Murray Hill
- Assignee: Bell Telephone Laboratories, Incorporated
- Current Assignee: Bell Telephone Laboratories, Incorporated
- Current Assignee Address: NJ Murray Hill
- Main IPC: H01S5/04
- IPC: H01S5/04 ; H01S5/10 ; H01S5/183 ; H01S5/30 ; H01S3/18
Abstract:
Broadband laser gain is obtained in semiconductor materials by pumping an ultra-short laser cavity with picosecond excitation pulses. The broadband laser gain is used to provide picosecond laser radiation energy covering a wide spectrum of frequencies.
Public/Granted literature
- US4841528A Frequency doubled, cavity dumped feedback laser Public/Granted day:1989-06-20
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