摘要:
A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.
摘要:
A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.
摘要:
A method for producing a sputtered stoichiometric a-Al2O3 thin film. A substrate is placed into a chamber containing an Al target to be sputtered. The chamber is evacuated to a base pressure of about 7×10−8 Torr or lower and the temperature of the substrate is maintained. With a sputtering shutter in the chamber closed, Ar gas is flowed into the chamber to backsputter the Al target and Ar and O2 gases are flowed into the chamber to presputter the target. The shutter is opened and Al is sputtered onto the substrate in the presence of the Ar and O2 gases to obtain a sputtered a-Al2O3 film on the substrate.
摘要:
A method for producing a sputtered stoichiometric a-Al2O3 thin film. A substrate is placed into a chamber containing an Al target to be sputtered. The chamber is evacuated to a base pressure of about 7×10−8 Torr or lower and the temperature of the substrate is maintained. With a sputtering shutter in the chamber closed, Ar gas is flowed into the chamber to backsputter the Al target and Ar and O2 gases are flowed into the chamber to presputter the target. The shutter is opened and Al is sputtered onto the substrate in the presence of the Ar and O2 gases to obtain a sputtered a-Al2O3 film on the substrate.
摘要:
A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.
摘要:
A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.