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1.发明申请公开(公告)号：US20170069819A1
公开(公告)日：2017-03-09
申请号：US15352639
申请日：2016-11-16
发明人： Xiao Liu , Daniel R. Queen , Frances Hellman , Thomas H. Metcalf , Matthew R. Abernathy , Glenn G. Jernigan
CPC分类号： H01L39/2493 , B32B15/00 , C21D1/40 , C21D1/773 , C21D2201/03 , C22C45/00 , C23C14/06 , C23C14/0605 , C23C14/0652 , C23C14/14 , C23C14/541 , H01B3/02 , H01B19/04 , H01L21/02112 , H01L21/02123 , H01L39/02 , H01L39/025 , H01L39/24
摘要： A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.
摘要翻译： 具有高材料密度和低密度隧道状态的无氢非晶介质绝缘膜。 通过在高真空和受控的低沉积速率下在具有高衬底温度Tsub的衬底上沉积介电材料来制备膜。 在一个实施例中，膜是非晶硅，而在另一个实施例中，膜是无定形锗。
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公开(公告)号：US20160247997A1
公开(公告)日：2016-08-25
申请号：US15047671
申请日：2016-02-19
发明人： Xiao Liu , Thomas H. Metcalf , Daniel R. Queen , Battogtokh Jugdersuren , Qi Wang , William Nemeth
摘要： A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.
摘要翻译： 一种形成掺杂的nc-Si薄膜热电材料的方法。 nc-Si薄膜通过热线CVD（HWCVD）缓慢沉积在衬底上，控制H2：SiH4比为R = 6-10，或通过等离子体增强（PECVD）控制R = 80-100 然后进行n型或p型掺杂剂的离子注入和最终退火步骤以激活注入的掺杂剂和去除非晶区域。 如此形成的掺杂的nc-Si薄膜热电材料具有几十nm至3nm的可控晶粒尺寸和可控的掺杂剂分布，并且因此可以被配置为提供具有预定的所需热和/或电 属性。 使用最终退火步骤来激活掺杂剂并除去任何残留的无定形区域。
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公开(公告)号：US11384421B2
公开(公告)日：2022-07-12
申请号：US16275556
申请日：2019-02-14
摘要： A method for producing a sputtered stoichiometric a-Al2O3 thin film. A substrate is placed into a chamber containing an Al target to be sputtered. The chamber is evacuated to a base pressure of about 7×10−8 Torr or lower and the temperature of the substrate is maintained. With a sputtering shutter in the chamber closed, Ar gas is flowed into the chamber to backsputter the Al target and Ar and O2 gases are flowed into the chamber to presputter the target. The shutter is opened and Al is sputtered onto the substrate in the presence of the Ar and O2 gases to obtain a sputtered a-Al2O3 film on the substrate.
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公开(公告)号：US20190284677A1
公开(公告)日：2019-09-19
申请号：US16275556
申请日：2019-02-14
摘要： A method for producing a sputtered stoichiometric a-Al2O3 thin film. A substrate is placed into a chamber containing an Al target to be sputtered. The chamber is evacuated to a base pressure of about 7×10−8 Torr or lower and the temperature of the substrate is maintained. With a sputtering shutter in the chamber closed, Ar gas is flowed into the chamber to backsputter the Al target and Ar and O2 gases are flowed into the chamber to presputter the target. The shutter is opened and Al is sputtered onto the substrate in the presence of the Ar and O2 gases to obtain a sputtered a-Al2O3 film on the substrate.
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5.发明授权公开(公告)号：US09741921B2
公开(公告)日：2017-08-22
申请号：US15352639
申请日：2016-11-16
发明人： Xiao Liu , Daniel R. Queen , Frances Hellman , Thomas H. Metcalf , Matthew R. Abernathy , Glenn G. Jernigan
IPC分类号： H01L39/24 , H01L39/02 , C21D1/773 , C23C14/06 , C21D1/40 , C23C14/14 , C23C14/54 , C22C45/00 , H01B19/04 , H01B3/02 , H01L21/02
CPC分类号： H01L39/2493 , B32B15/00 , C21D1/40 , C21D1/773 , C21D2201/03 , C22C45/00 , C23C14/06 , C23C14/0605 , C23C14/0652 , C23C14/14 , C23C14/541 , H01B3/02 , H01B19/04 , H01L21/02112 , H01L21/02123 , H01L39/02 , H01L39/025 , H01L39/24
摘要： A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.
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公开(公告)号：US20160372651A1
公开(公告)日：2016-12-22
申请号：US15256764
申请日：2016-09-06
发明人： Xiao Liu , Thomas H. Metcalf , Daniel R. Queen , Battogtokh Jugdersuren , Qi Wang , William Nemeth
摘要： A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.
摘要翻译： 一种形成掺杂的nc-Si薄膜热电材料的方法。 nc-Si薄膜通过热线CVD（HWCVD）缓慢沉积在衬底上，控制H2：SiH4比R = 6-10，或通过等离子体增强（PECVD）控制R = 80-100 然后进行n型或p型掺杂剂的离子注入和最终退火步骤以激活注入的掺杂剂和去除非晶区域。 如此形成的掺杂的nc-Si薄膜热电材料具有几十nm至3nm的可控晶粒尺寸和可控的掺杂剂分布，并且因此可以被配置为提供具有预定的所需热和/或电 属性。 使用最终退火步骤来激活掺杂剂并除去任何残留的无定形区域。
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