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    Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic
    1.
    发明授权
    Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic 有权

    公开(公告)号：US11062911B2

    公开(公告)日：2021-07-13

    申请号：US16796614

    申请日：2020-02-20

    Applicant: Tessera, Inc.

    Inventor： Fee Li Lie ,  Dongbing Shao ,  Robert Wong ,  Yongan Xu

    IPC: H01L21/308 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/8234 ,  H01L29/66 ,  H01L27/088 ,  H01L27/11 ,  H01L29/78

    Abstract: First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.

    TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RANDOM ACCESS MEMORY (SRAM) AND DENSE LOGIC
    3.
    发明申请
    TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RANDOM ACCESS MEMORY (SRAM) AND DENSE LOGIC 审中-公开

    公开(公告)号：US20200266072A1

    公开(公告)日：2020-08-20

    申请号：US16796614

    申请日：2020-02-20

    Applicant: Tessera, Inc.

    Inventor： Fee Li Lie ,  Dongbing Shao ,  Robert Wong ,  Yongan Xu

    IPC: H01L21/308 ,  H01L27/088 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/3065 ,  H01L21/033 ,  H01L21/311

    Abstract: First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.

    TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RANDOM ACCESS MEMORY (SRAM) AND DENSE LOGIC
    5.
    发明申请
    TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RANDOM ACCESS MEMORY (SRAM) AND DENSE LOGIC 有权

    公开(公告)号：US20210343536A1

    公开(公告)日：2021-11-04

    申请号：US17360819

    申请日：2021-06-28

    Applicant: Tessera, Inc.

    Inventor： Fee Li Lie ,  Dongbing Shao ,  Robert C. Wong ,  Yongan Xu

    IPC: H01L21/308 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/8234 ,  H01L29/66 ,  H01L27/088

    Abstract: First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography and etching are carried out on the first intermediate structure, using a second mask, to provide a second intermediate semiconductor structure having a second set of surface features corresponding to a second portion of the mandrels. The second set of surface features are unequally spaced from the first set of surface features and/or the features have different pitch. The fin formation mandrels are formed in the second intermediate semiconductor structure using the first and second sets of surface features; spacer material is deposited over the mandrels and is etched back to form a third intermediate semiconductor structure having a fin pattern. Etching is carried out on same to produce the fin pattern.

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