公开(公告)号：US08034717B2

公开(公告)日：2011-10-11

申请号：US12207530

申请日：2008-09-10

申请人： Takuya Futase ,  Tomonori Saeki ,  Mieko Kashi

发明人： Takuya Futase ,  Tomonori Saeki ,  Mieko Kashi

IPC分类号： H01L21/44

CPC分类号： C23F1/30 ,  H01L21/32134 ,  H01L27/10814 ,  H01L28/55 ,  H01L28/60 ,  Y10S134/902

摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

公开(公告)号：US06737221B2

公开(公告)日：2004-05-18

申请号：US10424854

申请日：2003-04-29

申请人： Takuya Futase ,  Tomonori Saeki ,  Mieko Kashi

发明人： Takuya Futase ,  Tomonori Saeki ,  Mieko Kashi

IPC分类号： B08B304

CPC分类号： C23F1/30 ,  H01L21/32134 ,  H01L27/10814 ,  H01L28/55 ,  H01L28/60 ,  Y10S134/902

摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

摘要翻译： 为了防止在半导体批量生产工艺中由过渡金属制成的晶片的污染，本发明的半导体集成电路器件的批量生产方法包括以下步骤：在通过晶片工艺的各个晶片上沉积Ru膜， 通过含有正周期酸和硝酸的水溶液从沉积有Ru膜的单个晶片的器件侧和背面的外边缘部分去除Ru膜，并对其进行处理 所述Ru膜已被去除，涉及光刻步骤，与属于下层步骤的多个晶片（初始元素形成步骤和形成前的布线步骤）具有通用关系的检查步骤或热处理步骤 的栅极绝缘膜）。

公开(公告)号：US08293648B2

公开(公告)日：2012-10-23

申请号：US13239571

申请日：2011-09-22

申请人： Takuya Futase ,  Tomonori Saeki ,  Mieko Kashi

发明人： Takuya Futase ,  Tomonori Saeki ,  Mieko Kashi

IPC分类号： H01L21/44

CPC分类号： C23F1/30 ,  H01L21/32134 ,  H01L27/10814 ,  H01L28/55 ,  H01L28/60 ,  Y10S134/902

摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

摘要翻译： 为了防止在半导体批量生产工艺中由过渡金属制成的晶片的污染，本发明的半导体集成电路器件的批量生产方法包括以下步骤：在通过晶片工艺的各个晶片上沉积Ru膜， 通过含有正周期酸和硝酸的水溶液从沉积有Ru膜的单个晶片的器件侧和背面的外边缘部分去除Ru膜，并对其进行处理 所述Ru膜已被去除，涉及光刻步骤，与属于下层步骤的多个晶片（初始元素形成步骤和形成前的布线步骤）具有通用关系的检查步骤或热处理步骤 的栅极绝缘膜）。

公开(公告)号：US20120009800A1

公开(公告)日：2012-01-12

申请号：US13239571

申请日：2011-09-22

申请人： Takuya FUTASE ,  Tomonori Saeki ,  Mieko Kashi

发明人： Takuya FUTASE ,  Tomonori Saeki ,  Mieko Kashi

IPC分类号： H01L21/02

CPC分类号： C23F1/30 ,  H01L21/32134 ,  H01L27/10814 ,  H01L28/55 ,  H01L28/60 ,  Y10S134/902

摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

摘要翻译： 为了防止在半导体批量生产工艺中由过渡金属制成的晶片的污染，本发明的半导体集成电路器件的批量生产方法包括以下步骤：在通过晶片工艺的各个晶片上沉积Ru膜， 通过含有正周期酸和硝酸的水溶液从沉积有Ru膜的单个晶片的器件侧和背面的外边缘部分去除Ru膜，并对其进行处理 所述Ru膜已被去除，涉及光刻步骤，与属于下层步骤的多个晶片（初始元素形成步骤和形成前的布线步骤）具有通用关系的检查步骤或热处理步骤 的栅极绝缘膜）。

公开(公告)号：US20080182414A1

公开(公告)日：2008-07-31

申请号：US12018154

申请日：2008-01-22

申请人： Takuya Futase ,  Tomonori Saeki ,  Mieko Kashi

发明人： Takuya Futase ,  Tomonori Saeki ,  Mieko Kashi

IPC分类号： H01L21/311

CPC分类号： C23F1/30 ,  H01L21/32134 ,  H01L27/10814 ,  H01L28/55 ,  H01L28/60 ,  Y10S134/902

摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

摘要翻译： 为了防止在半导体批量生产工艺中由过渡金属制成的晶片的污染，本发明的半导体集成电路器件的批量生产方法包括以下步骤：在通过晶片工艺的各个晶片上沉积Ru膜， 通过含有正周期酸和硝酸的水溶液从沉积有Ru膜的单个晶片的器件侧和背面的外边缘部分去除Ru膜，并对其进行处理 所述Ru膜已被去除，涉及光刻步骤，与属于下层步骤的多个晶片（初始元素形成步骤和形成前的布线步骤）具有通用关系的检查步骤或热处理步骤 的栅极绝缘膜）。

公开(公告)号：US07964509B2

公开(公告)日：2011-06-21

申请号：US12018154

申请日：2008-01-22

申请人： Takuya Futase ,  Tomonori Saeki ,  Mieko Kashi

发明人： Takuya Futase ,  Tomonori Saeki ,  Mieko Kashi

IPC分类号： H01L21/311

CPC分类号： C23F1/30 ,  H01L21/32134 ,  H01L27/10814 ,  H01L28/55 ,  H01L28/60 ,  Y10S134/902

摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

摘要翻译： 为了防止在半导体批量生产工艺中由过渡金属制成的晶片的污染，本发明的半导体集成电路器件的批量生产方法包括以下步骤：在通过晶片工艺的各个晶片上沉积Ru膜， 通过含有正周期酸和硝酸的水溶液从沉积有Ru膜的单个晶片的器件侧和背面的外边缘部分去除Ru膜，并对其进行处理 所述Ru膜已被去除，涉及光刻步骤，与属于下层步骤的多个晶片（初始元素形成步骤和形成前的布线步骤）具有通用关系的检查步骤或热处理步骤 的栅极绝缘膜）。

公开(公告)号：US06586161B2

公开(公告)日：2003-07-01

申请号：US10245503

申请日：2002-09-18

申请人： Takuya Futase ,  Tomonori Saeki ,  Mieko Kashi

发明人： Takuya Futase ,  Tomonori Saeki ,  Mieko Kashi

IPC分类号： G03C556

CPC分类号： C23F1/30 ,  H01L21/32134 ,  H01L27/10814 ,  H01L28/55 ,  H01L28/60 ,  Y10S134/902

摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

摘要翻译： 为了防止在半导体批量生产工艺中由过渡金属制成的晶片的污染，本发明的半导体集成电路器件的批量生产方法包括以下步骤：在通过晶片工艺的各个晶片上沉积Ru膜， 通过含有正周期酸和硝酸的水溶液从沉积有Ru膜的单个晶片的器件侧和背面的外边缘部分去除Ru膜，并对其进行处理 所述Ru膜已被去除，涉及光刻步骤，与属于下层步骤的多个晶片（初始元素形成步骤和形成前的布线步骤）具有通用关系的检查步骤或热处理步骤 的栅极绝缘膜）。

公开(公告)号：US20090011597A1

公开(公告)日：2009-01-08

申请号：US12207530

申请日：2008-09-10

申请人： TAKUYA FUTASE ,  Tomonori Seaki ,  Mieko Kashi

发明人： TAKUYA FUTASE ,  Tomonori Seaki ,  Mieko Kashi

IPC分类号： H01L21/44

CPC分类号： C23F1/30 ,  H01L21/32134 ,  H01L27/10814 ,  H01L28/55 ,  H01L28/60 ,  Y10S134/902

摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

摘要翻译： 为了防止在半导体批量生产工艺中由过渡金属制成的晶片的污染，本发明的半导体集成电路器件的批量生产方法包括以下步骤：在通过晶片工艺的各个晶片上沉积Ru膜， 通过含有正周期酸和硝酸的水溶液从沉积有Ru膜的单个晶片的器件侧和背面的外边缘部分去除Ru膜，并对其进行处理 所述Ru膜已被去除，涉及光刻步骤，与属于下层步骤的多个晶片（初始元素形成步骤和形成前的布线步骤）具有通用关系的检查步骤或热处理步骤 的栅极绝缘膜）。

公开(公告)号：US20090165824A1

公开(公告)日：2009-07-02

申请号：US12316749

申请日：2008-12-15

申请人： Kazuya Sekiguchi ,  Hiroyuki Sugimoto ,  Hirokazu Yamamoto ,  Akiko Hashi ,  Katsuhiro Ota ,  Mieko Kashi ,  Toshinori Jinoka ,  Takuya Kambayashi

发明人： Kazuya Sekiguchi ,  Hiroyuki Sugimoto ,  Hirokazu Yamamoto ,  Akiko Hashi ,  Katsuhiro Ota ,  Mieko Kashi ,  Toshinori Jinoka ,  Takuya Kambayashi

IPC分类号： B08B3/00 ,  B08B3/02 ,  B08B3/04 ,  B08B3/12 ,  B08B3/08 ,  B08B5/04

CPC分类号： G11B5/41 ,  G11B5/3173

摘要： Embodiments of the present invention improve the efficiency of a cleaning process for cleaning a component part of a magnetic disk drive in a magnetic disk drive manufacturing line. According to one embodiment, a magnetic disk part cleaning apparatus is included in a head stack assembly (HSA) cleaning line for cleaning head stack assemblies of magnetic disk drives included in a magnetic disk drive manufacturing line. The magnetic disk part cleaning apparatus is disposed between a HSA assembly line for assembling a head stack assembly, and head disk assembly (HDA) assembly line for assembling a head disk assembly including the head stack assembly and is connected directly to at least either of the HSA assembly line and the HDA assembly line.

摘要翻译： 本发明的实施例提高了用于清洁磁盘驱动器生产线中的磁盘驱动器的部件的清洁处理的效率。 根据一个实施例，磁盘部件清洁装置被包括在用于清洁包括在磁盘驱动器生产线中的磁盘驱动器的磁头堆叠组件的磁头堆叠组件（HSA）清洁线中。 磁盘部件清洁装置设置在用于组装磁头堆叠组件的HSA组装线和用于组装包括磁头组组件的磁头组件的磁头盘组件（HDA）组装线之间，并且直接连接至磁头组件 HSA装配线和HDA装配线。