公开(公告)号：US20090011597A1

公开(公告)日：2009-01-08

申请号：US12207530

申请日：2008-09-10

申请人： TAKUYA FUTASE ,  Tomonori Seaki ,  Mieko Kashi

发明人： TAKUYA FUTASE ,  Tomonori Seaki ,  Mieko Kashi

IPC分类号： H01L21/44

CPC分类号： C23F1/30 ,  H01L21/32134 ,  H01L27/10814 ,  H01L28/55 ,  H01L28/60 ,  Y10S134/902

摘要： In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

摘要翻译： 为了防止在半导体批量生产工艺中由过渡金属制成的晶片的污染，本发明的半导体集成电路器件的批量生产方法包括以下步骤：在通过晶片工艺的各个晶片上沉积Ru膜， 通过含有正周期酸和硝酸的水溶液从沉积有Ru膜的单个晶片的器件侧和背面的外边缘部分去除Ru膜，并对其进行处理 所述Ru膜已被去除，涉及光刻步骤，与属于下层步骤的多个晶片（初始元素形成步骤和形成前的布线步骤）具有通用关系的检查步骤或热处理步骤 的栅极绝缘膜）。