公开(公告)号：US20120289018A1

公开(公告)日：2012-11-15

申请号：US13556372

申请日：2012-07-24

申请人： Tak H. Ning ,  Kevin K. Chan ,  Marwan H. Khater

发明人： Tak H. Ning ,  Kevin K. Chan ,  Marwan H. Khater

IPC分类号： H01L21/331

CPC分类号： H01L29/7317 ,  H01L27/0821 ,  H01L27/1203 ,  H01L29/0808 ,  H01L29/165 ,  H01L29/66265

摘要： A lateral heterojunction bipolar transistor (HBT) is formed on a semiconductor-on-insulator substrate. The HBT includes a base including a doped silicon-germanium alloy base region, an emitter including doped silicon and laterally contacting the base, and a collector including doped silicon and laterally contacting the base. Because the collector current is channeled through the doped silicon-germanium base region, the HBT can accommodate a greater current density than a comparable bipolar transistor employing a silicon channel. The base may also include an upper silicon base region and/or a lower silicon base region. In this case, the collector current is concentrated in the doped silicon-germanium base region, thereby minimizing noise introduced to carrier scattering at the periphery of the base. Further, parasitic capacitance is minimized because the emitter-base junction area is the same as the collector-base junction area.

摘要翻译： 在绝缘体上半导体衬底上形成横向异质结双极晶体管（HBT）。 HBT包括基底，其包括掺杂的硅 - 锗合金基底区域，包括掺杂硅并且横向接触基底的发射体，以及包括掺杂硅并且横向接触基底的收集器。 因为集电极电流被引导通过掺杂的硅 - 锗基区，所以与使用硅沟道的可比较的双极晶体管相比，HBT可以容纳更大的电流密度。 基底还可以包括上硅基区和/或下硅基区。 在这种情况下，集电极电流集中在掺杂的硅 - 锗基区域中，从而最小化引入到基极周边的载流子散射的噪声。 此外，寄生电容被最小化，因为发射极 - 基极结面积与集电极 - 基极结面积相同。

公开(公告)号：US20120139009A1

公开(公告)日：2012-06-07

申请号：US12958647

申请日：2010-12-02

申请人： Tak H. Ning ,  Kevin K. Chan ,  Marwan H. Khater

发明人： Tak H. Ning ,  Kevin K. Chan ,  Marwan H. Khater

IPC分类号： H01L29/737 ,  H01L21/8222

CPC分类号： H01L29/7317 ,  H01L27/0821 ,  H01L27/1203 ,  H01L29/0808 ,  H01L29/165 ,  H01L29/66265

摘要： A lateral heterojunction bipolar transistor (HBT) is formed on a semiconductor-on-insulator substrate. The HBT includes a base including a doped silicon-germanium alloy base region, an emitter including doped silicon and laterally contacting the base, and a collector including doped silicon and laterally contacting the base. Because the collector current is channeled through the doped silicon-germanium base region, the HBT can accommodate a greater current density than a comparable bipolar transistor employing a silicon channel. The base may also include an upper silicon base region and/or a lower silicon base region. In this case, the collector current is concentrated in the doped silicon-germanium base region, thereby minimizing noise introduced to carrier scattering at the periphery of the base. Further, parasitic capacitance is minimized because the emitter-base junction area is the same as the collector-base junction area.

摘要翻译： 在绝缘体上半导体衬底上形成横向异质结双极晶体管（HBT）。 HBT包括基底，其包括掺杂的硅 - 锗合金基底区域，包括掺杂硅并且横向接触基底的发射体，以及包括掺杂硅并且横向接触基底的收集器。 因为集电极电流被引导通过掺杂的硅 - 锗基区，所以与使用硅沟道的可比较的双极晶体管相比，HBT可以容纳更大的电流密度。 基底还可以包括上硅基区和/或下硅基区。 在这种情况下，集电极电流集中在掺杂的硅 - 锗基区域中，从而最小化引入到基极周边的载流子散射的噪声。 此外，寄生电容被最小化，因为发射极 - 基极结面积与集电极 - 基极结面积相同。

公开(公告)号：US08288758B2

公开(公告)日：2012-10-16

申请号：US12958647

申请日：2010-12-02

申请人： Tak H. Ning ,  Kevin K. Chan ,  Marwan H. Khater

发明人： Tak H. Ning ,  Kevin K. Chan ,  Marwan H. Khater

IPC分类号： H01L29/06 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/117

CPC分类号： H01L29/7317 ,  H01L27/0821 ,  H01L27/1203 ,  H01L29/0808 ,  H01L29/165 ,  H01L29/66265

摘要： A lateral heterojunction bipolar transistor (HBT) is formed on a semiconductor-on-insulator substrate. The HBT includes a base including a doped silicon-germanium alloy base region, an emitter including doped silicon and laterally contacting the base, and a collector including doped silicon and laterally contacting the base. Because the collector current is channeled through the doped silicon-germanium base region, the HBT can accommodate a greater current density than a comparable bipolar transistor employing a silicon channel. The base may also include an upper silicon base region and/or a lower silicon base region. In this case, the collector current is concentrated in the doped silicon-germanium base region, thereby minimizing noise introduced to carrier scattering at the periphery of the base. Further, parasitic capacitance is minimized because the emitter-base junction area is the same as the collector-base junction area.

摘要翻译： 在绝缘体上半导体衬底上形成横向异质结双极晶体管（HBT）。 HBT包括基底，其包括掺杂的硅 - 锗合金基底区域，包括掺杂硅并且横向接触基底的发射体，以及包括掺杂硅并且横向接触基底的收集器。 因为集电极电流被引导通过掺杂的硅 - 锗基区，所以与使用硅沟道的可比较的双极晶体管相比，HBT可以容纳更大的电流密度。 基底还可以包括上硅基区和/或下硅基区。 在这种情况下，集电极电流集中在掺杂的硅 - 锗基区域中，从而最小化引入到基极周边的载流子散射的噪声。 此外，寄生电容被最小化，因为发射极 - 基极结面积与集电极 - 基极结面积相同。

公开(公告)号：US08420493B2

公开(公告)日：2013-04-16

申请号：US13556372

申请日：2012-07-24

申请人： Tak H. Ning ,  Kevin K. Chan ,  Marwan H. Khater

发明人： Tak H. Ning ,  Kevin K. Chan ,  Marwan H. Khater

IPC分类号： H01L21/331 ,  H01L21/336

CPC分类号： H01L29/7317 ,  H01L27/0821 ,  H01L27/1203 ,  H01L29/0808 ,  H01L29/165 ,  H01L29/66265

摘要： A lateral heterojunction bipolar transistor (HBT) is formed on a semiconductor-on-insulator substrate. The HBT includes a base including a doped silicon-germanium alloy base region, an emitter including doped silicon and laterally contacting the base, and a collector including doped silicon and laterally contacting the base. Because the collector current is channeled through the doped silicon-germanium base region, the HBT can accommodate a greater current density than a comparable bipolar transistor employing a silicon channel. The base may also include an upper silicon base region and/or a lower silicon base region. In this case, the collector current is concentrated in the doped silicon-germanium base region, thereby minimizing noise introduced to carrier scattering at the periphery of the base. Further, parasitic capacitance is minimized because the emitter-base junction area is the same as the collector-base junction area.

摘要翻译： 在绝缘体上半导体衬底上形成横向异质结双极晶体管（HBT）。 HBT包括基底，其包括掺杂的硅 - 锗合金基底区域，包括掺杂硅并且横向接触基底的发射体，以及包括掺杂硅并且横向接触基底的收集器。 因为集电极电流被引导通过掺杂的硅 - 锗基区，所以与使用硅沟道的可比较的双极晶体管相比，HBT可以容纳更大的电流密度。 基底还可以包括上硅基区和/或下硅基区。 在这种情况下，集电极电流集中在掺杂的硅 - 锗基区域中，从而最小化引入到基极周边的载流子散射的噪声。 此外，寄生电容被最小化，因为发射极 - 基极结面积与集电极 - 基极结面积相同。

公开(公告)号：US20110033952A1

公开(公告)日：2011-02-10

申请号：US12537063

申请日：2009-08-06

申请人： Marwan H. Khater ,  Tak H. Ning ,  Lidija Sekaric ,  Sufi Zafar

发明人： Marwan H. Khater ,  Tak H. Ning ,  Lidija Sekaric ,  Sufi Zafar

IPC分类号： G01N33/543 ,  H01L29/78

CPC分类号： G01N33/54373 ,  B82Y10/00 ,  G01N27/3276 ,  G01N27/4145 ,  G01N33/543 ,  H01L29/785 ,  Y10S977/721 ,  Y10S977/92 ,  Y10S977/953

摘要： A sensor for biomolecules includes a silicon fin comprising undoped silicon; a source region adjacent to the silicon fin, the source region comprising heavily doped silicon; a drain region adjacent to the silicon fin, the drain region comprising heavily doped silicon of a doping type that is the same doping type as that of the source region; and a layer of a gate dielectric covering an exterior portion of the silicon fin between the source region and the drain region, the gate dielectric comprising a plurality of antibodies, the plurality of antibodies configured to bind with the biomolecules, such that a drain current flowing between the source region and the drain region varies when the biomolecules bind with the antibodies.

摘要翻译： 用于生物分子的传感器包括包含未掺杂硅的硅片; 与硅鳍片相邻的源极区域，源极区域包括重掺杂的硅; 与所述硅鳍片相邻的漏极区域，所述漏极区域包括掺杂类型的与所述源极区域相同的掺杂类型的重掺杂硅; 以及覆盖源极区域和漏极区域之间的硅鳍片的外部部分的栅极电介质层，所述栅极电介质包括多个抗体，所述多个抗体被配置为与所述生物分子结合，使得漏极电流流动 当生物分子与抗体结合时，在源区和漏区之间变化。

公开(公告)号：US09029132B2

公开(公告)日：2015-05-12

申请号：US12537063

申请日：2009-08-06

申请人： Marwan H. Khater ,  Tak H. Ning ,  Lidija Sekaric ,  Sufi Zafar

发明人： Marwan H. Khater ,  Tak H. Ning ,  Lidija Sekaric ,  Sufi Zafar

IPC分类号： C12M1/34 ,  G01N33/551 ,  G01N33/543 ,  B82Y10/00 ,  G01N27/327 ,  H01L29/78

CPC分类号： G01N33/54373 ,  B82Y10/00 ,  G01N27/3276 ,  G01N27/4145 ,  G01N33/543 ,  H01L29/785 ,  Y10S977/721 ,  Y10S977/92 ,  Y10S977/953

摘要： A sensor for biomolecules includes a silicon fin comprising undoped silicon; a source region adjacent to the silicon fin, the source region comprising heavily doped silicon; a drain region adjacent to the silicon fin, the drain region comprising heavily doped silicon of a doping type that is the same doping type as that of the source region; and a layer of a gate dielectric covering an exterior portion of the silicon fin between the source region and the drain region, the gate dielectric comprising a plurality of antibodies, the plurality of antibodies configured to bind with the biomolecules, such that a drain current flowing between the source region and the drain region varies when the biomolecules bind with the antibodies.

摘要翻译： 用于生物分子的传感器包括包含未掺杂硅的硅片; 与硅鳍片相邻的源极区域，源极区域包括重掺杂的硅; 与所述硅鳍片相邻的漏极区域，所述漏极区域包括掺杂类型的与所述源极区域相同的掺杂类型的重掺杂硅; 以及覆盖源极区域和漏极区域之间的硅鳍片的外部部分的栅极电介质层，所述栅极电介质包括多个抗体，所述多个抗体被配置为与所述生物分子结合，使得漏极电流流动 当生物分子与抗体结合时，在源区和漏区之间变化。

公开(公告)号：US20120282596A1

公开(公告)日：2012-11-08

申请号：US13552727

申请日：2012-07-19

申请人： Marwan H. Khater ,  Tak H. Ning ,  Lidija Sekaric ,  Sufi Zafar

发明人： Marwan H. Khater ,  Tak H. Ning ,  Lidija Sekaric ,  Sufi Zafar

IPC分类号： G01N27/26

CPC分类号： G01N33/54373 ,  B82Y10/00 ,  G01N27/3276 ,  G01N27/4145 ,  G01N33/543 ,  H01L29/785 ,  Y10S977/721 ,  Y10S977/92 ,  Y10S977/953

摘要： A method for sensing biomolecules in an electrolyte includes exposing a gate dielectric surface of a sensor comprising a silicon fin to the electrolyte, wherein the gate dielectric surface comprises a dielectric material and antibodies configured to bind with the biomolecules; applying a gate voltage to an electrode immersed in the electrolyte; and measuring a change in a drain current flowing in the silicon fin; and determining an amount of the biomolecules that are present in the electrolyte based on the change in the drain current.

摘要翻译： 用于感测电解质中的生物分子的方法包括将包含硅翅片的传感器的栅极电介质表面暴露于电解质，其中所述栅极电介质表面包括电介质材料和被配置为与所述生物分子结合的抗体; 对浸在电解质中的电极施加栅极电压; 并测量在硅片中流动的漏极电流的变化; 以及基于漏极电流的变化确定存在于电解质中的生物分子的量。

公开(公告)号：US08940548B2

公开(公告)日：2015-01-27

申请号：US13552727

申请日：2012-07-19

申请人： Marwan H. Khater ,  Tak H. Ning ,  Lidija Sekaric ,  Sufi Zafar

发明人： Marwan H. Khater ,  Tak H. Ning ,  Lidija Sekaric ,  Sufi Zafar

IPC分类号： G01N33/552 ,  G01N33/543 ,  B82Y10/00 ,  H01L29/78

CPC分类号： G01N33/54373 ,  B82Y10/00 ,  G01N27/3276 ,  G01N27/4145 ,  G01N33/543 ,  H01L29/785 ,  Y10S977/721 ,  Y10S977/92 ,  Y10S977/953

摘要： A method for sensing biomolecules in an electrolyte includes exposing a gate dielectric surface of a sensor comprising a silicon fin to the electrolyte, wherein the gate dielectric surface comprises a dielectric material and antibodies configured to bind with the biomolecules; applying a gate voltage to an electrode immersed in the electrolyte; and measuring a change in a drain current flowing in the silicon fin; and determining an amount of the biomolecules that are present in the electrolyte based on the change in the drain current.

摘要翻译： 用于感测电解质中的生物分子的方法包括将包含硅翅片的传感器的栅极电介质表面暴露于电解质，其中所述栅极电介质表面包括电介质材料和被配置为与所述生物分子结合的抗体; 对浸在电解质中的电极施加栅极电压; 并测量在硅片中流动的漏极电流的变化; 以及基于漏极电流的变化确定存在于电解质中的生物分子的量。

公开(公告)号：US08558282B1

公开(公告)日：2013-10-15

申请号：US13607672

申请日：2012-09-08

申请人： Jin Cai ,  Kevin K. Chan ,  Christopher P. D'Emic ,  Bahman Hekmatshoartabari ,  Tak H. Ning ,  Dae-Gyu Park

发明人： Jin Cai ,  Kevin K. Chan ,  Christopher P. D'Emic ,  Bahman Hekmatshoartabari ,  Tak H. Ning ,  Dae-Gyu Park

IPC分类号： H01L21/331

CPC分类号： H01L29/6625 ,  H01L29/161 ,  H01L29/735

摘要： A germanium lateral bipolar junction transistor (BJT) is formed employing a germanium-on-insulator (GOI) substrate. A silicon passivation layer is deposited on the top surface of a germanium layer in the GOI substrate. Shallow trench isolation structures, an extrinsic base region structure, and a base spacer are subsequently formed. A germanium emitter region, a germanium base region, and a germanium collector region are formed within the germanium layer by ion implantation. A silicon emitter region, a silicon base region, and a silicon collector region are formed in the silicon passivation layer. After optional formation of an emitter contact region and a collector contact region, metal semiconductor alloy regions can be formed. A wide gap contact for minority carriers is provided between the silicon base region and the germanium base region and between the silicon emitter region and the germanium emitter region.

公开(公告)号：US20130260526A1

公开(公告)日：2013-10-03

申请号：US13605253

申请日：2012-09-06

申请人： Jin Cai ,  Kevin K. Chan ,  Christopher P. D'Emic ,  Tak H. Ning ,  Dae-Gyu Park

发明人： Jin Cai ,  Kevin K. Chan ,  Christopher P. D'Emic ,  Tak H. Ning ,  Dae-Gyu Park

IPC分类号： H01L21/8222

CPC分类号： H01L29/42304 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/7322 ,  H01L29/7371

摘要： A lateral heterojunction bipolar transistor is formed on a semiconductor-on-insulator substrate including a top semiconductor portion of a first semiconductor material having a first band gap and a doping of a first conductivity type. A stack of an extrinsic base and a base cap is formed such that the stack straddles over the top semiconductor portion. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor portion that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap and having a doping of the second conductivity type is selectively deposited on the emitter region and the collector region to form an emitter contact region and a collector contact region, respectively.