公开(公告)号：US20240363716A1

公开(公告)日：2024-10-31

申请号：US18770929

申请日：2024-07-12

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Wu-Wei TSAI ,  Chun-Chieh LU ,  Hai-Ching CHEN ,  Yu-Ming LIN ,  Sai-Hooi YEONG

IPC分类号： H01L29/49 ,  H01L21/02 ,  H01L21/443 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/4908 ,  H01L21/02233 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/443 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： A thin film transistor may be manufactured by forming a gate electrode in an insulating layer over a substrate, forming a gate dielectric over the gate electrode and the insulating layer, forming an active layer over the gate electrode, and forming a source electrode and a drain electrode contacting a respective portion of a top surface of the active layer. A surface oxygen concentration may be increased in at least one of the gate dielectric and the active layer by introducing oxygen atoms into a surface region of a respective one of the gate dielectric and the active layer.

公开(公告)号：US20210398991A1

公开(公告)日：2021-12-23

申请号：US17229926

申请日：2021-04-14

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Mauricio MANFRINI ,  Sai-Hooi YEONG ,  Han-Jong CHIA ,  Bo-Feng YOUNG ,  Chun-Chieh LU

IPC分类号： H01L27/1159 ,  H01L29/78 ,  H01L21/28 ,  H01L29/66 ,  H01L29/51

摘要： A ferroelectric tunnel junction (FTJ) memory device includes a bottom electrode located over a substrate, a top electrode overlying the bottom electrode, and a ferroelectric tunnel junction memory element located between the bottom electrode and the top electrode. The ferroelectric tunnel junction memory element includes at least one ferroelectric material layer and at least one tunneling dielectric layer.

公开(公告)号：US20230369439A1

公开(公告)日：2023-11-16

申请号：US18359015

申请日：2023-07-26

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Wu-Wei TSAI ,  Chun-Chieh LU ,  Hai-Ching CHEN ,  Yu-Ming LIN ,  Sai-Hooi YEONG

IPC分类号： H01L29/49 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L21/443

CPC分类号： H01L29/4908 ,  H01L29/24 ,  H01L29/7869 ,  H01L21/02233 ,  H01L29/66969 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/443 ,  H01L21/02252

摘要： A thin film transistor may be manufactured by forming a gate electrode in an insulating layer over a substrate, forming a gate dielectric over the gate electrode and the insulating layer, forming an active layer over the gate electrode, and forming a source electrode and a drain electrode contacting a respective portion of a top surface of the active layer. A surface oxygen concentration may be increased in at least one of the gate dielectric and the active layer by introducing oxygen atoms into a surface region of a respective one of the gate dielectric and the active layer.

公开(公告)号：US20230387186A1

公开(公告)日：2023-11-30

申请号：US18363217

申请日：2023-08-01

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chun-Chieh LU ,  Mauricio MANFRINI ,  Marcus Johannes Hendricus VAN DAL ,  Chih-Yu CHANG ,  Sai-Hooi YEONG ,  Yu-Ming LIN ,  Georgios VALLIANITIS

IPC分类号： H01G4/33 ,  H01L21/3213 ,  H01L21/321

CPC分类号： H01L28/40 ,  H01L21/32136 ,  H01L21/3212

摘要： Embodiments include structures and methods for fabricating an MFM capacitor having a plurality of metal contacts. An embodiment may include a first metal strip, disposed on a substrate and extending in a first direction, a ferroelectric blanket layer, disposed on the first metal strip, a second metal strip, disposed on the ferroelectric blanket layer and extending in a second direction different from the first direction, and a plurality of metal contacts disposed between the first metal strip and the second metal strip and located within an intersection region of the first metal strip and the second metal strip.

公开(公告)号：US20220254897A1

公开(公告)日：2022-08-11

申请号：US17467497

申请日：2021-09-07

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Wu-Wei TSAI ,  Chun-Chieh LU ,  Hai-Ching CHEN ,  Yu-Ming LIN ,  Sai-Hooi YEONG

IPC分类号： H01L29/49 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L21/443 ,  H01L29/66

摘要： A thin film transistor may be manufactured by forming a gate electrode in an insulating layer over a substrate, forming a gate dielectric over the gate electrode and the insulating layer, forming an active layer over the gate electrode, and forming a source electrode and a drain electrode contacting a respective portion of a top surface of the active layer. A surface oxygen concentration may be increased in at least one of the gate dielectric and the active layer by introducing oxygen atoms into a surface region of a respective one of the gate dielectric and the active layer.

公开(公告)号：US20210376055A1

公开(公告)日：2021-12-02

申请号：US17222193

申请日：2021-04-05

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chun-Chieh LU ,  Mauricio MANFRINI ,  Marcus Johannes Hendricus VAN DAL ,  Chih-Yu CHANG ,  Sai-Hooi YEONG ,  Yu-Ming LIN ,  Georgios VALLIANITIS

IPC分类号： H01L49/02 ,  H01L21/321 ,  H01L21/3213

摘要： Embodiments include structures and methods for fabricating an MFM capacitor having a plurality of metal contacts. An embodiment may include a first metal strip, disposed on a substrate and extending in a first direction, a ferroelectric blanket layer, disposed on the first metal strip, a second metal strip, disposed on the ferroelectric blanket layer and extending in a second direction different from the first direction, and a plurality of metal contacts disposed between the first metal strip and the second metal strip and located within an intersection region of the first metal strip and the second metal strip.