公开(公告)号：US11081363B2

公开(公告)日：2021-08-03

申请号：US16713465

申请日：2019-12-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

发明人： Sheng-Fang Cheng ,  Chen-Chih Wu ,  Chien-Yuan Lee ,  Yen-Lin Liu

IPC分类号： H01L21/26 ,  H01L21/3205 ,  H01L29/78 ,  H01L29/423 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/265 ,  H01L21/768

摘要： Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

公开(公告)号：US20150021713A1

公开(公告)日：2015-01-22

申请号：US14330285

申请日：2014-07-14

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Sheng-Fang Cheng ,  Yen-Lin Liu ,  Chen-Chih Wu ,  Chien-Yuan Lee

IPC分类号： H01L29/06 ,  H01L21/3205 ,  H01L21/768 ,  H01L29/78 ,  H01L23/48

CPC分类号： H01L21/32051 ,  H01L21/265 ,  H01L21/32055 ,  H01L21/76877 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0692 ,  H01L29/423 ,  H01L29/7851

摘要： Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

摘要翻译： 其中，提供了一种或多种用于形成这种半导体布置的半导体布置和技术。 半导体装置包括围绕器件的至少一部分的第一保护环和形成在第一保护环上的第一多晶硅层。

公开(公告)号：US09941141B2

公开(公告)日：2018-04-10

申请号：US15463213

申请日：2017-03-20

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Sheng-Fang Cheng ,  Chen-Chih Wu ,  Chien-Yuan Lee ,  Yen-Lin Liu

IPC分类号： H01L29/06 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/265

CPC分类号： H01L21/32051 ,  H01L21/265 ,  H01L21/32055 ,  H01L21/76877 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0692 ,  H01L29/423 ,  H01L29/7851

摘要： Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

公开(公告)号：US10510554B2

公开(公告)日：2019-12-17

申请号：US16206036

申请日：2018-11-30

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Sheng-Fang Cheng ,  Chen-Chih Wu ,  Chien-Yuan Lee ,  Yen-Lin Liu

IPC分类号： H01L21/26 ,  H01L21/3205 ,  H01L29/78 ,  H01L29/423 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/265 ,  H01L21/768

摘要： Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

公开(公告)号：US10170333B2

公开(公告)日：2019-01-01

申请号：US15947977

申请日：2018-04-09

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Sheng-Fang Cheng ,  Chen-Chih Wu ,  Chien-Yuan Lee ,  Yen-Lin Liu

IPC分类号： H01L21/265 ,  H01L21/3205 ,  H01L29/78 ,  H01L29/423 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/768

摘要： Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

公开(公告)号：US09601625B2

公开(公告)日：2017-03-21

申请号：US14330285

申请日：2014-07-14

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Sheng-Fang Cheng ,  Yen-Lin Liu ,  Chen-Chih Wu ,  Chien-Yuan Lee

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L21/8234 ,  H01L27/088

CPC分类号： H01L21/32051 ,  H01L21/265 ,  H01L21/32055 ,  H01L21/76877 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0692 ,  H01L29/423 ,  H01L29/7851

摘要： Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

公开(公告)号：US20170194165A1

公开(公告)日：2017-07-06

申请号：US15463213

申请日：2017-03-20

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Sheng-Fang Cheng ,  Chen-Chih Wu ,  Chien-Yuan Lee ,  Yen-Lin Liu

IPC分类号： H01L21/3205 ,  H01L21/265 ,  H01L29/06 ,  H01L21/768

CPC分类号： H01L21/32051 ,  H01L21/265 ,  H01L21/32055 ,  H01L21/76877 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0692 ,  H01L29/423 ,  H01L29/7851

摘要： Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.