公开(公告)号：US11205597B2

公开(公告)日：2021-12-21

申请号：US16458437

申请日：2019-07-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wei-Chun Tan ,  I-Hsieh Wong ,  Te-En Cheng ,  Yung-Hui Lin ,  Wei-Ken Lin ,  Wei-Yang Lee ,  Chih-Hung Nien

IPC: H01L21/311 ,  H01L29/16 ,  H01L27/092 ,  H01L29/06 ,  H01L21/306 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/265 ,  H01L21/308 ,  H01L21/3115 ,  H01L21/3065 ,  H01L29/66 ,  H01L29/08 ,  H01L21/027 ,  H01L21/762 ,  H01L21/266 ,  H01L29/36

Abstract: A method includes forming a first fin extending from a substrate, forming a first gate stack over and along sidewalls of the first fin, forming a first spacer along a sidewall of the first gate stack, the first spacer including a first composition of silicon oxycarbide, forming a second spacer along a sidewall of the first spacer, the second spacer including a second composition of silicon oxycarbide, forming a third spacer along a sidewall of the second spacer, the third spacer including silicon nitride, and forming a first epitaxial source/drain region in the first fin and adjacent the third spacer.