公开(公告)号：US20190067027A1

公开(公告)日：2019-02-28

申请号：US15801194

申请日：2017-11-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yin Wang ,  Hung-Ju Chou ,  Jiun-Ming Kuo ,  Wei-Ken Lin ,  Chun Te Li

IPC: H01L21/3105 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8238

Abstract: A method includes forming a semiconductor capping layer over a first fin in a first region of a substrate, forming a dielectric layer over the semiconductor capping layer, and forming an insulation material over the dielectric layer, an upper surface of the insulation material extending further away from the substrate than an upper surface of the first fin. The method further includes recessing the insulation material to expose a top portion of the first fin, and forming a gate structure over the top portion of the first fin.

公开(公告)号：US20230119827A1

公开(公告)日：2023-04-20

申请号：US17832599

申请日：2022-06-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yin Wang ,  Chunyao Wang

IPC: H01L29/49 ,  H01L29/78 ,  H01L29/08 ,  H01L21/28 ,  H01L29/66

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack formed over the substrate. The semiconductor device structure includes a spacer structure formed over a sidewall of the gate stack. The spacer structure includes a dielectric layer, a silicon rich layer, and a protection layer. The dielectric layer is formed between the gate stack and the silicon rich layer. The silicon rich layer is formed between the dielectric layer and the protection layer. A first atomic percentage of silicon in the silicon rich layer is greater than about 50%. The semiconductor device structure includes a source/drain structure formed over the substrate. The spacer structure is formed between the source/drain structure and the gate stack.

公开(公告)号：US20200006077A1

公开(公告)日：2020-01-02

申请号：US16569815

申请日：2019-09-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yin Wang ,  Hung-Ju Chou ,  Jiun-Ming Kuo ,  Wei-Ken Lin ,  Chun Te Li

IPC: H01L21/3105 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/06

Abstract: A method includes forming a semiconductor capping layer over a first fin in a first region of a substrate, forming a dielectric layer over the semiconductor capping layer, and forming an insulation material over the dielectric layer, an upper surface of the insulation material extending further away from the substrate than an upper surface of the first fin. The method further includes recessing the insulation material to expose a top portion of the first fin, and forming a gate structure over the top portion of the first fin.

公开(公告)号：US10964548B2

公开(公告)日：2021-03-30

申请号：US16569815

申请日：2019-09-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yin Wang ,  Hung-Ju Chou ,  Jiun-Ming Kuo ,  Wei-Ken Lin ,  Chun Te Li

IPC: H01L21/3105 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L21/762 ,  H01L29/08

Abstract: A method includes forming a semiconductor capping layer over a first fin in a first region of a substrate, forming a dielectric layer over the semiconductor capping layer, and forming an insulation material over the dielectric layer, an upper surface of the insulation material extending further away from the substrate than an upper surface of the first fin. The method further includes recessing the insulation material to expose a top portion of the first fin, and forming a gate structure over the top portion of the first fin.