公开(公告)号：US12034048B2

公开(公告)日：2024-07-09

申请号：US18360186

申请日：2023-07-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ruei-Ping Lin ,  Kai-Di Tzeng ,  Chen-Ming Lee ,  Wei-Yang Lee

IPC分类号： H01L29/10 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/1033 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/775 ,  H01L29/7851 ,  H01L29/7855 ,  H01L29/78696 ,  H01L2029/7858

摘要： A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a first gate structure over and wrapping around each of the first plurality of channel members, a second gate structure over and wrapping around each of the second plurality of channel members, and a through-substrate contact that extends between the first plurality of channel members and the second plurality of channel members, between the first gate structure and the second gate structure, and through the backside dielectric layer.

公开(公告)号：US20220344472A1

公开(公告)日：2022-10-27

申请号：US17859909

申请日：2022-07-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ruei-Ping Lin ,  Kai-Di Tzeng ,  Chen-Ming Lee ,  Wei-Yang Lee

IPC分类号： H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L29/775 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06

摘要： A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a first gate structure over and wrapping around each of the first plurality of channel members, a second gate structure over and wrapping around each of the second plurality of channel members, and a through-substrate contact that extends between the first plurality of channel members and the second plurality of channel members, between the first gate structure and the second gate structure, and through the backside dielectric layer.

公开(公告)号：US20220165848A1

公开(公告)日：2022-05-26

申请号：US17100543

申请日：2020-11-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ruei-Ping Lin ,  Kai-Di Tzeng ,  Chen-Ming Lee ,  Wei-Yang Lee

IPC分类号： H01L29/10 ,  H01L29/78 ,  H01L29/66

摘要： A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a first gate structure over and wrapping around each of the first plurality of channel members, a second gate structure over and wrapping around each of the second plurality of channel members, and a through-substrate contact that extends between the first plurality of channel members and the second plurality of channel members, between the first gate structure and the second gate structure, and through the backside dielectric layer.

公开(公告)号：US20230369405A1

公开(公告)日：2023-11-16

申请号：US18360186

申请日：2023-07-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ruei-Ping Lin ,  Kai-Di Tzeng ,  Chen-Ming Lee ,  Wei-Yang Lee

IPC分类号： H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L29/775 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06

CPC分类号： H01L29/1033 ,  H01L29/7855 ,  H01L29/6656 ,  H01L29/66818 ,  H01L29/6681 ,  H01L29/7851 ,  H01L29/775 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/0673 ,  H01L29/66545 ,  H01L29/66439 ,  H01L2029/7858

摘要： A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a first gate structure over and wrapping around each of the first plurality of channel members, a second gate structure over and wrapping around each of the second plurality of channel members, and a through-substrate contact that extends between the first plurality of channel members and the second plurality of channel members, between the first gate structure and the second gate structure, and through the backside dielectric layer.

公开(公告)号：US11749719B2

公开(公告)日：2023-09-05

申请号：US17859909

申请日：2022-07-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ruei-Ping Lin ,  Kai-Di Tzeng ,  Chen-Ming Lee ,  Wei-Yang Lee

IPC分类号： H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L29/775 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06

CPC分类号： H01L29/1033 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/6656 ,  H01L29/6681 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66818 ,  H01L29/775 ,  H01L29/7851 ,  H01L29/7855 ,  H01L29/78696 ,  H01L2029/7858

摘要： A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a first plurality of channel members over a backside dielectric layer, a second plurality of channel members over the backside dielectric layer, a first gate structure over and wrapping around each of the first plurality of channel members, a second gate structure over and wrapping around each of the second plurality of channel members, and a through-substrate contact that extends between the first plurality of channel members and the second plurality of channel members, between the first gate structure and the second gate structure, and through the backside dielectric layer.