公开(公告)号：US20240360548A1

公开(公告)日：2024-10-31

申请号：US18769943

申请日：2024-07-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chi-Cheng HUNG ,  Pei-Wen WU ,  Yu-Sheng WANG ,  Pei-Shan CHANG

IPC分类号： C23C16/06 ,  C23C16/02 ,  H01L21/02 ,  H01L21/033 ,  H01L29/34 ,  H01L29/66

CPC分类号： C23C16/06 ,  C23C16/0281 ,  H01L21/02425 ,  H01L21/0332 ,  H01L29/34 ,  H01L29/66795

摘要： In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.

公开(公告)号：US20240332374A1

公开(公告)日：2024-10-03

申请号：US18492382

申请日：2023-10-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chi-Cheng HUNG ,  Pei-Wen WU ,  Pei Shan CHANG

IPC分类号： H01L29/40 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/417 ,  H01L29/45

CPC分类号： H01L29/401 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53257 ,  H01L29/41725 ,  H01L29/456 ,  H01L21/76843

摘要： A method and structure for forming semiconductor device includes forming a first opening in a dielectric layer to expose a source/drain region. In some embodiments, the method further includes depositing a first metal layer in the opening and over the source/drain region. Thereafter, in some examples, the method further includes performing an annealing process to modulate a grain size of the first metal layer. In various embodiments, the method further includes depositing a second metal layer over the annealed first metal layer. In some embodiments, the second metal layer has a substantially uniform phase.

公开(公告)号：US20240249977A1

公开(公告)日：2024-07-25

申请号：US18583194

申请日：2024-02-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Pei-Wen WU ,  Chun-I TSAI ,  Chi-Cheng HUNG ,  Jyh-Cherng SHEU ,  Yu-Sheng WANG ,  Ming-Hsing TSAI

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L29/45

CPC分类号： H01L21/76846 ,  H01L21/28562 ,  H01L21/76856 ,  H01L21/76897 ,  H01L29/456

摘要： A metal adhesion layer may be formed on a bottom and a sidewall of a trench prior to formation of a metal plug in the trench. A plasma may be used to modify the phase composition of the metal adhesion layer to increase adhesion between the metal adhesion layer and the metal plug. In particular, the plasma may cause a shift or transformation of the phase composition of the metal adhesion layer to cause the metal adhesion layer to be composed of a (111) dominant phase. The (111) dominant phase of the metal adhesion layer increases adhesion between the metal adhesion layer.