公开(公告)号：US20150079753A1

公开(公告)日：2015-03-19

申请号：US14552237

申请日：2014-11-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tung Ying Lee ,  Li-Wen Weng ,  Chien-Tai Chan ,  Da-Wen Lin ,  Hsien-Chin Lin

IPC分类号： H01L29/66

CPC分类号： H01L29/66795 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/785

摘要： A system and method for manufacturing multiple-gate semiconductor devices is disclosed. An embodiment comprises multiple fins, wherein intra-fin isolation regions extend into the substrate less than inter-fin isolation regions. Regions of the multiple fins not covered by the gate stack are removed and source/drain regions are formed from the substrate so as to avoid the formation of voids between the fins in the source/drain region.

摘要翻译： 公开了一种用于制造多栅极半导体器件的系统和方法。 一个实施例包括多个散热片，其中散热片内隔离区域延伸到小于鳍间隔离区域的衬底内。 去除未被栅极堆叠覆盖的多个鳍片的区域，并且从衬底形成源极/漏极区域，以避免在源极/漏极区域中的鳍片之间形成空隙。

公开(公告)号：US09373704B2

公开(公告)日：2016-06-21

申请号：US14552237

申请日：2014-11-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tung Ying Lee ,  Li-Wen Weng ,  Chien-Tai Chan ,  Da-Wen Lin ,  Hsien-Chin Lin

IPC分类号： H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

CPC分类号： H01L29/66795 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/785

摘要： A system and method for manufacturing multiple-gate semiconductor devices is disclosed. An embodiment comprises multiple fins, wherein intra-fin isolation regions extend into the substrate less than inter-fin isolation regions. Regions of the multiple fins not covered by the gate stack are removed and source/drain regions are formed from the substrate so as to avoid the formation of voids between the fins in the source/drain region.

公开(公告)号：US20130230958A1

公开(公告)日：2013-09-05

申请号：US13863963

申请日：2013-04-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tung Ying Lee ,  Li-Wen Weng ,  Chien-Tai Chan ,  Da-Wen Lin ,  Hsien-Chin Lin

IPC分类号： H01L29/66

CPC分类号： H01L29/66795 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/785

摘要： A system and method for manufacturing multiple-gate semiconductor devices is disclosed. An embodiment comprises multiple fins, wherein intra-fin isolation regions extend into the substrate less than inter-fin isolation regions. Regions of the multiple fins not covered by the gate stack are removed and source/drain regions are formed from the substrate so as to avoid the formation of voids between the fins in the source/drain region.

公开(公告)号：US08895383B2

公开(公告)日：2014-11-25

申请号：US13863963

申请日：2013-04-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tung Ying Lee ,  Li-Wen Weng ,  Chien-Tai Chan ,  Da-Wen Lin ,  Hsien-Chin Lin

IPC分类号： H01L21/8238 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/66795 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/785

摘要： A system and method for manufacturing multiple-gate semiconductor devices is disclosed. An embodiment comprises multiple fins, wherein intra-fin isolation regions extend into the substrate less than inter-fin isolation regions. Regions of the multiple fins not covered by the gate stack are removed and source/drain regions are formed from the substrate so as to avoid the formation of voids between the fins in the source/drain region.

摘要翻译： 公开了一种用于制造多栅极半导体器件的系统和方法。 一个实施例包括多个散热片，其中散热片内隔离区域延伸到小于鳍间隔离区域的衬底内。 去除未被栅极堆叠覆盖的多个鳍片的区域，并且从衬底形成源极/漏极区域，以避免在源极/漏极区域中的鳍片之间形成空隙。