公开(公告)号：US20210249308A1

公开(公告)日：2021-08-12

申请号：US17301482

申请日：2021-04-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Liang CHENG ,  I-Ming CHANG ,  Hsiang-Pi CHANG ,  Yu-Wei LU ,  Ziwei FANG ,  Huang-Lin CHAO

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/10 ,  H01L21/02

Abstract: An integrated circuit device is provided that includes a first fin structure and a second fin structure extending from a substrate. The first fin structure is a first composition, and includes rounded corners. The second fin structure is a second composition, different than the first composition. A first interface layer is formed directly on the first fin structure including the rounded corners and a second interface layer directly on the second fin structure. The first interface layer is an oxide of the first composition and the second interface layer is an oxide of the second composition. A gate dielectric layer is formed over the first interface layer and the second interface layer.