公开(公告)号：US20220336530A1

公开(公告)日：2022-10-20

申请号：US17809935

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Tzu Lin ,  Kuo-Chyuan Tzeng ,  Kao-Chao Lin ,  Chang-Chih Huang

IPC: H01L27/24 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L45/00

Abstract: A device includes a first plurality of conductive strips have lengthwise directions in a first direction, a selector array overlapping the first plurality of conductive strips, an electrode array overlapping the selector array, a plurality of memory strips over the electrode array, and a second plurality of conductive strips overlapping the plurality of memory strips. The plurality of memory strips and the second plurality of conductive strips have lengthwise directions in a second direction perpendicular to the first direction.