公开(公告)号：US20230377912A1

公开(公告)日：2023-11-23

申请号：US18361555

申请日：2023-07-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Manish Kumar SINGH ,  Bo-Wei CHOU ,  Jui-Ming SHIH ,  Wen-Yu KU ,  Ping-Jung HUANG ,  Pi-Chun YU

IPC: H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67248 ,  H01L21/67086 ,  H01L21/67109 ,  H01L21/31111

Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to a peripheral edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.

公开(公告)号：US20150144161A1

公开(公告)日：2015-05-28

申请号：US14092533

申请日：2013-11-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Weibo YU ,  Kuo-Sheng CHUANG ,  Wen-Yu KU ,  Chin-Hsiang LIN

IPC: B08B3/02

CPC classification number: B08B3/02 ,  B05B15/555 ,  B08B17/025 ,  H01L21/67051

Abstract: A dispensing method is disclosed that includes the following steps: a cleaning sleeve is provided to surround a spray member. A first fluid is previously dispensed from a first fluid outlet of the spray member. A second fluid is sprayed from a second fluid outlet of the cleaning sleeve to clean the spray member. The cleaning sleeve is opened or slid away from the spray member, such that the first fluid outlet of the spray member is exposed to a substrate. The first fluid is dispensed from the first fluid outlet of the spray member to the substrate.

Abstract translation: 公开了一种分配方法，其包括以下步骤：提供清洁套筒以围绕喷雾构件。 预先从喷雾构件的第一流体出口分配第一流体。 从清洁套筒的第二流体出口喷射第二流体以清洁喷雾构件。 清洁套筒从喷雾构件打开或滑动，使得喷射构件的第一流体出口暴露于基底。 第一流体从喷雾构件的第一流体出口分配到基底。

公开(公告)号：US20160314994A1

公开(公告)日：2016-10-27

申请号：US14696973

申请日：2015-04-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Manish Kumar SINGH ,  Bo-Wei CHOU ,  Jui-Ming SHIH ,  Wen-Yu KU ,  Ping-Jung HUANG ,  Pi-Chun YU

IPC: H01L21/67 ,  H01L21/311

CPC classification number: H01L21/6708 ,  H01L21/31111 ,  H01L21/67086 ,  H01L21/67109 ,  H01L21/67248

Abstract: A method for etching an etch layer formed on a front side of a wafer and a wafer etching apparatus are provided. The wafer etching apparatus includes a first flow channel, a temperature-regulating module, and a second flow channel. The first flow channel is configured to carry a preheated/precooled liquid for controlling a temperature of a wafer. The temperature-regulating module is coupled to the first flow channel. The temperature-regulating module is configured to control a temperature of the liquid in the first flow channel. The second flow channel is configured to carry an etchant for etching an etch layer formed on a front side of the wafer. The method includes: controlling the temperature of the wafer by using the preheated/precooled liquid; and etching the etch layer with the etchant.

Abstract translation: 提供了蚀刻形成在晶片前侧的蚀刻层的方法和晶片蚀刻装置。 晶片蚀刻装置包括第一流路，温度调节模块和第二流路。 第一流动通道构造成承载用于控制晶片温度的预热/预冷液体。 温度调节模块耦合到第一流动通道。 温度调节模块被配置为控制第一流动通道中的液体的温度。 第二流动通道被配置为携带用于蚀刻形成在晶片正面上的蚀刻层的蚀刻剂。 该方法包括：通过使用预热/预冷液体来控制晶片的温度; 并用蚀刻剂蚀刻蚀刻层。

公开(公告)号：US20190259636A1

公开(公告)日：2019-08-22

申请号：US16404533

申请日：2019-05-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Manish Kumar SINGH ,  Bo-Wei CHOU ,  Jui-Ming SHIH ,  Wen-Yu KU ,  Ping-Jung HUANG ,  Pi-Chun YU

IPC: H01L21/67

Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to an edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.

公开(公告)号：US20190103277A1

公开(公告)日：2019-04-04

申请号：US15952714

申请日：2018-04-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hongfa LUAN ,  Huicheng CHANG ,  Cheng-Po CHAU ,  Wen-Yu KU ,  Yi-Fan CHEN ,  Chun-Yen PENG

IPC: H01L21/28 ,  H01L21/225 ,  H01L29/66 ,  H01L29/51 ,  H01L29/78

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.