公开(公告)号：US11315972B2

公开(公告)日：2022-04-26

申请号：US17095994

申请日：2020-11-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hung-Wen Hsu ,  Jiech-Fun Lu ,  Yeur-Luen Tu ,  U-Ting Chen ,  Shu-Ting Tsai ,  Hsiu-Yu Cheng

IPC分类号： H01L27/14 ,  H01L27/146

摘要： A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.

公开(公告)号：US20230378139A1

公开(公告)日：2023-11-23

申请号：US18359311

申请日：2023-07-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shu-Ting Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Chia-Chieh Lin ,  U-Ting Chen

IPC分类号： H01L25/065 ,  H01L25/00 ,  H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L25/0657 ,  H01L25/50 ,  H01L23/481 ,  H01L24/92 ,  H01L21/76898 ,  H01L2224/821 ,  H01L2224/82106 ,  H01L2224/24145 ,  H01L21/76831 ,  H01L2224/9212 ,  H01L23/53223 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L24/80 ,  H01L23/53238 ,  H01L2224/9202 ,  H01L24/82 ,  H01L2924/0002 ,  H01L21/76805 ,  H01L2225/06541 ,  H01L23/53266

摘要： An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two integrated circuits are bonded together. A first opening is formed through one of the substrates. A multi-layer dielectric film is formed along sidewalls and a bottom of the first opening. A second opening is formed extending from the first opening to pads in the integrated circuits. A dielectric liner is formed, and the opening is filled with a conductive material to form a conductive plug.

公开(公告)号：US20220208749A1

公开(公告)日：2022-06-30

申请号：US17696565

申请日：2022-03-16

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shu-Ting Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  U-Ting Chen

IPC分类号： H01L25/00 ,  H01L25/065 ,  H01L23/48 ,  H01L21/768 ,  H01L23/00

摘要： Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first semiconductor chip including a first substrate and a first conductive feature formed over the first substrate, and a second semiconductor chip bonded to the first semiconductor chip. The second semiconductor chip includes a second substrate and a second conductive feature formed over the second substrate. A conductive plug is disposed through the first conductive feature and is coupled to the second conductive feature. The conductive plug includes a first portion disposed over the first conductive feature, the first portion having a first width, and a second portion disposed beneath or within the first conductive feature. The second portion has a second width. The first width is greater than the second width.

公开(公告)号：US20210233945A1

公开(公告)日：2021-07-29

申请号：US17231223

申请日：2021-04-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hung-Wen Hsu ,  Jiech-Fun Lu ,  Yeur-Luen Tu ,  U-Ting Chen ,  Shu-Ting Tsai ,  Hsiu-Yu Cheng

IPC分类号： H01L27/146

摘要： A backside illumination (BSI) image sensor and a method of forming the same are provided. A device includes a substrate and a plurality of photosensitive regions in the substrate. The substrate has a first side and a second side opposite to the first side. The device further includes an interconnect structure on the first side of the substrate, and a plurality of recesses on the second side of the substrate. The plurality of recesses extend into a semiconductor material of the substrate.

公开(公告)号：US20210066357A1

公开(公告)日：2021-03-04

申请号：US17095994

申请日：2020-11-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hung-Wen Hsu ,  Jieh-Fun Lu ,  Yeur-Luen Tu ,  U-Ting Chen ,  Shu-Ting Tsai ,  Hsiu-Yu Cheng

IPC分类号： H01L27/146

摘要： A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.

公开(公告)号：US20170110497A1

公开(公告)日：2017-04-20

申请号：US15395071

申请日：2016-12-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： U-Ting Chen ,  Shu-Ting Tsai ,  Cheng-Ying Ho ,  Tzu-Hsuan Hsu ,  Shih Pei Chou

IPC分类号： H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/1469

摘要： An image sensor includes a sensor portion and an ASIC portion bonded to the sensor portion. The sensor portion includes a first substrate having radiation-sensing pixels, a first interconnect structure, a first isolation layer, and a first dielectric layer. The ASIC portion includes a second substrate, a second isolation layer, and a second dielectric layer. The material compositions of the first and second isolation layers and the first and second dielectric layers are configured such that the first and second isolation layers may serve as barrier layers to prevent copper diffusion into oxide. The first and second isolation layers may also serve as etching-stop layers in the formation of the image sensor.