公开(公告)号：US20250113551A1

公开(公告)日：2025-04-03

申请号：US18404785

申请日：2024-01-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng CHEN ,  Sih-Jie LIU ,  Liang-Yin CHEN ,  Chi On CHUI

IPC: H01L29/78 ,  H01L21/265 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: A method includes: forming a stack of nanostructures over a substrate; forming a source/drain opening adjacent the stack of nanostructures; forming a semiconductor layer in the source/drain opening; forming an amorphous semiconductor layer by performing an ion implantation on the semiconductor layer; and forming a recrystallized source/drain by annealing the amorphous semiconductor layer.