公开(公告)号：US12046665B2

公开(公告)日：2024-07-23

申请号：US18160256

申请日：2023-01-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching Cheng ,  Hung-Li Chiang ,  Chun-Chieh Lu ,  Ming-Yang Li ,  Tzu-Chiang Chen

IPC: H01L29/76 ,  H01L29/04 ,  H01L29/20 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/7606 ,  H01L29/04 ,  H01L29/2003 ,  H01L29/454 ,  H01L29/66795 ,  H01L29/785

Abstract: A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.

公开(公告)号：US20210083082A1

公开(公告)日：2021-03-18

申请号：US16573892

申请日：2019-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching Cheng ,  Hung-Li Chiang ,  Chun-Chieh Lu ,  Ming-Yang Li ,  Tzu- Chiang Chen

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/45 ,  H01L29/66 ,  H01L29/20 ,  H01L29/04

Abstract: A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.

公开(公告)号：US11037783B2

公开(公告)日：2021-06-15

申请号：US16415463

申请日：2019-05-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Yang Li ,  Lain-Jong Li ,  Chih-Piao Chuu

IPC: H01L21/02 ,  H01L29/10 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L29/778 ,  H01L21/8234

Abstract: In a method of forming a two-dimensional material layer, a nucleation pattern is formed over a substrate, and a transition metal dichalcogenide (TMD) layer is formed such that the TMD layer laterally grows from the nucleation pattern. In one or more of the foregoing and following embodiments, the TMD layer is single crystalline.

公开(公告)号：US11004965B2

公开(公告)日：2021-05-11

申请号：US16573892

申请日：2019-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching Cheng ,  Hung-Li Chiang ,  Chun-Chieh Lu ,  Ming-Yang Li ,  Tzu-Chiang Chen

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/04 ,  H01L29/66 ,  H01L29/20 ,  H01L29/45

Abstract: A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.

公开(公告)号：US11600720B2

公开(公告)日：2023-03-07

申请号：US17240482

申请日：2021-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching Cheng ,  Hung-Li Chiang ,  Chun-Chieh Lu ,  Ming-Yang Li ,  Tzu-Chiang Chen

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/04 ,  H01L29/66 ,  H01L29/20 ,  H01L29/45

Abstract: A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.

公开(公告)号：US11430666B2

公开(公告)日：2022-08-30

申请号：US16732205

申请日：2019-12-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Piao Chuu ,  Ming-Yang Li ,  Lain-Jong Li

IPC: H01L21/00 ,  H01L21/441 ,  H01L21/02 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: A method of fabricating a semiconductor device includes applying a plasma to a portion of a metal dichalcogenide film. The metal dichalcogenide film includes a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof. A metal layer including a second metal is formed over the portion of the metal dichalcogenide film after applying the plasma.