公开(公告)号：US09576789B2

公开(公告)日：2017-02-21

申请号：US13752415

申请日：2013-01-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Hsien Lu ,  Ting-Kui Chang ,  Jung-Tsan Tsai

IPC分类号： B08B3/00 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02087 ,  H01L21/02057 ,  H01L21/30625 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67219

摘要： A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

摘要翻译： 晶片清洁装置包括用于晶片的化学机械抛光（CMP）的抛光单元和布置成在晶片的CMP之后将清洁流体引向晶片的远边缘的清洁分配单元。 晶片清洗方法包括通过抛光单元对晶片进行CMP，并且通过清洁分配单元在晶片的CMP之后将清洁流体导向晶片的远边缘。 另一种方法可以包括CMP，施加去离子水和施加pH范围为约2至约13的pH调节剂。

公开(公告)号：US20240079239A1

公开(公告)日：2024-03-07

申请号：US18152454

申请日：2023-01-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Bau-Ming Wang ,  Liang-Yin Chen ,  Wei Tse Hsu ,  Jung-Tsan Tsai ,  Ya-Ching Tseng ,  Chunyii Liu

IPC分类号： H01L21/225 ,  H01L21/306 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/40 ,  H01L29/417

CPC分类号： H01L21/2253 ,  H01L21/30625 ,  H01L21/823871 ,  H01L27/092 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/0673

摘要： A method includes implanting impurities in a semiconductor substrate to form an etch stop region within the semiconductor substrate; forming a transistor structure on a front side of the semiconductor substrate; forming a front-side interconnect structure over the transistor structure; performing a thinning process on a back side of the semiconductor substrate to reduce a thickness of the semiconductor substrate, wherein the thinning process is slowed by the etch stop region; and forming a back-side interconnect structure over the back side of the semiconductor substrate.

公开(公告)号：US10998184B2

公开(公告)日：2021-05-04

申请号：US16437352

申请日：2019-06-11

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Hsien Lu ,  Ting-Kui Chang ,  Jung-Tsan Tsai

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/306

摘要： A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

公开(公告)号：US10325772B2

公开(公告)日：2019-06-18

申请号：US15416331

申请日：2017-01-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Hsien Lu ,  Ting-Kui Chang ,  Jung-Tsan Tsai

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/306

摘要： A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

公开(公告)号：US11705324B2

公开(公告)日：2023-07-18

申请号：US17306767

申请日：2021-05-03

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Hsien Lu ,  Ting-Kui Chang ,  Jung-Tsan Tsai

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/306

CPC分类号： H01L21/02087 ,  H01L21/02057 ,  H01L21/30625 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67219

摘要： A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

公开(公告)号：US20210257211A1

公开(公告)日：2021-08-19

申请号：US17306767

申请日：2021-05-03

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Hsien LU ,  Ting-Kui Chang ,  Jung-Tsan Tsai

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/306

摘要： A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.

公开(公告)号：US20190295842A1

公开(公告)日：2019-09-26

申请号：US16437352

申请日：2019-06-11

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Hsien LU ,  Ting-Kui Chang ,  Jung-Tsan Tsai

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/67

摘要： A wafer cleaning apparatus includes a polishing unit used in chemical mechanical polishing (CMP) of a wafer and a cleaning dispensing unit arranged to direct cleaning fluids toward a far edge of the wafer after the CMP of the wafer. A wafer cleaning method includes CMP of a wafer by a polishing unit and directing cleaning fluids toward a far edge of the wafer after the CMP of the wafer by a cleaning dispensing unit. Another method can include CMP, applying deionized water, and applying pH adjuster having a pH range from about 2 to about 13.