公开(公告)号：US11230784B2

公开(公告)日：2022-01-25

申请号：US16677563

申请日：2019-11-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan Nian ,  Shiu-Ko Jangjian ,  Ting-Chun Wang ,  Ing-Ju Lee

IPC: C25D21/12 ,  C25D3/38 ,  H01L21/768 ,  C25D7/12 ,  C25D17/00

Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

公开(公告)号：US11015260B2

公开(公告)日：2021-05-25

申请号：US16698528

申请日：2019-11-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan Nian ,  Shiu-Ko Jangjian ,  Yu-Ren Peng ,  Yao-Hsiang Liang ,  Ting-Chun Wang

IPC: C25D17/00 ,  C25D21/12 ,  C25D3/38 ,  H01L21/768

Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

公开(公告)号：US11598016B2

公开(公告)日：2023-03-07

申请号：US17507382

申请日：2021-10-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan Nian ,  Shiu-Ko Jangjian ,  Ting-Chun Wang ,  Ing-Ju Lee

IPC: C25D7/12 ,  C25D3/38 ,  C25D21/12 ,  H01L21/768 ,  C25D17/00

Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

公开(公告)号：US09870995B2

公开(公告)日：2018-01-16

申请号：US14743926

申请日：2015-06-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan Nian ,  Shiu-Ko Jangjian ,  Chi-Cheng Hung ,  Yu-Sheng Wang ,  Hung-Hsu Chen

IPC: H01L23/532 ,  B32B15/01 ,  H01L21/288 ,  H01L21/768 ,  B32B15/20

CPC classification number: H01L23/53238 ,  B32B15/01 ,  H01L21/2885 ,  H01L21/76877

Abstract: A copper layer structure includes a first copper layer, a second copper layer and a carbon-rich copper layer. The second copper layer is disposed over the first copper layer. The carbon-rich copper layer is sandwiched between the first copper layer and the second copper layer. A carbon concentration of the carbon-rich copper layer is greater than a carbon concentration of the first copper layer and a carbon concentration of the second copper layer.

公开(公告)号：US11603602B2

公开(公告)日：2023-03-14

申请号：US17238080

申请日：2021-04-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan Nian ,  Shiu-Ko Jangjian ,  Yu-Ren Peng ,  Yao-Hsiang Liang ,  Ting-Chun Wang

IPC: C25D7/12 ,  C25D21/12 ,  C25D3/38 ,  H01L21/768 ,  C25D17/00

Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

公开(公告)号：US20200176310A1

公开(公告)日：2020-06-04

申请号：US16698528

申请日：2019-11-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan Nian ,  Shiu-Ko JANGJIAN ,  Yu-Ren PENG ,  Yao-Hsiang LIANG ,  Ting-Chun WANG

IPC: H01L21/768 ,  C25D17/00 ,  C25D21/12 ,  C25D3/38

Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

公开(公告)号：US10749278B2

公开(公告)日：2020-08-18

申请号：US15132099

申请日：2016-04-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jun-Nan Nian ,  Jyun-Ru Wu ,  Shiu-Ko Jangjian ,  Yu-Ren Peng ,  Chi-Cheng Hung ,  Yu-Sheng Wang

IPC: C25D7/12 ,  H01R4/2433 ,  H02G3/08 ,  C25D3/38 ,  C25D5/16 ,  C25D7/00 ,  H01R13/506 ,  H02G15/06

Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.

公开(公告)号：US20200173051A1

公开(公告)日：2020-06-04

申请号：US16677563

申请日：2019-11-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan Nian ,  Shiu-Ko JANGJIAN ,  Ting-Chun WANG ,  Ing-Ju LEE ,  Yu-Ren PENG ,  Yao-Hsiang LIANG

IPC: C25D17/00 ,  C25D21/12

Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.