公开(公告)号：US11598016B2

公开(公告)日：2023-03-07

申请号：US17507382

申请日：2021-10-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan Nian ,  Shiu-Ko Jangjian ,  Ting-Chun Wang ,  Ing-Ju Lee

IPC: C25D7/12 ,  C25D3/38 ,  C25D21/12 ,  H01L21/768 ,  C25D17/00

Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

公开(公告)号：US11309265B2

公开(公告)日：2022-04-19

申请号：US16503773

申请日：2019-07-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Hsun Huang ,  Po-Han Wang ,  Ing-Ju Lee ,  Chao-Lung Chen ,  Cheng-Ming Wu

IPC: H01L23/00 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768

Abstract: Methods of fabricating semiconductor devices are provided. The method includes providing a substrate and forming an interconnect structure on the substrate. The interconnect structure includes a top metal layer. The method also includes forming a first barrier film on the top metal layer using a first deposition process with a first level of power, and forming a second barrier film on the first barrier film using a second deposition process with a second level of power that is lower than the first level of power. The method further includes forming an aluminum-containing layer on the second barrier film. In addition, the method includes patterning the first barrier film, the second barrier film and the aluminum-containing layer to form a conductive pad structure.

公开(公告)号：US11230784B2

公开(公告)日：2022-01-25

申请号：US16677563

申请日：2019-11-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan Nian ,  Shiu-Ko Jangjian ,  Ting-Chun Wang ,  Ing-Ju Lee

IPC: C25D21/12 ,  C25D3/38 ,  H01L21/768 ,  C25D7/12 ,  C25D17/00

Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.