公开(公告)号：US10461088B2

公开(公告)日：2019-10-29

申请号：US15941669

申请日：2018-03-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Ching-Yen Hsaio ,  Cheng-Ming Wu ,  Shih-Lu Hsu ,  Chien-Hsian Wang

IPC: H01L27/115 ,  H01L21/28 ,  H01L21/027 ,  H01L27/11521 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/788 ,  H01L21/3213

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a gate stack and a conductive layer over a semiconductor substrate. The semiconductor substrate has a first region and a second region isolated from each other by an isolation structure in the semiconductor substrate. The gate stack is formed over the first region. The method includes forming a negative photoresist layer over the first region and a first portion of the conductive layer over the isolation structure to cover the gate stack. The method includes forming a mask layer over the negative photoresist layer and the conductive layer. The mask layer has trenches over a second portion of the conductive layer. The method includes removing the second portion through the trenches. The method includes removing the mask layer. The method includes removing the negative photoresist layer.

公开(公告)号：US11309265B2

公开(公告)日：2022-04-19

申请号：US16503773

申请日：2019-07-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Hsun Huang ,  Po-Han Wang ,  Ing-Ju Lee ,  Chao-Lung Chen ,  Cheng-Ming Wu

IPC: H01L23/00 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768

Abstract: Methods of fabricating semiconductor devices are provided. The method includes providing a substrate and forming an interconnect structure on the substrate. The interconnect structure includes a top metal layer. The method also includes forming a first barrier film on the top metal layer using a first deposition process with a first level of power, and forming a second barrier film on the first barrier film using a second deposition process with a second level of power that is lower than the first level of power. The method further includes forming an aluminum-containing layer on the second barrier film. In addition, the method includes patterning the first barrier film, the second barrier film and the aluminum-containing layer to form a conductive pad structure.

公开(公告)号：US10978462B2

公开(公告)日：2021-04-13

申请号：US16662941

申请日：2019-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Ching-Yen Hsaio ,  Cheng-Ming Wu ,  Shih-Lu Hsu ,  Chien-Hsian Wang

IPC: H01L21/027 ,  H01L27/11521 ,  H01L29/06 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L29/788 ,  H01L21/3213

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a gate stack and a conductive layer over a semiconductor substrate. The method includes forming a negative photoresist layer to cover the gate stack and a first portion of the conductive layer over the isolation structure and expose a second portion of the conductive layer. The method includes forming a mask layer over the negative photoresist layer and the conductive layer. The mask layer has trenches over the second portion of the conductive layer and an edge portion of the negative photoresist layer, and a thickness of the edge portion decreases in a direction away from the gate stack.

公开(公告)号：US10105732B2

公开(公告)日：2018-10-23

申请号：US14988677

申请日：2016-01-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hsiang Hung ,  Teng-Yi Huang ,  Fu-Jen Tien ,  Li-Jen Wu ,  Cheng-Ming Wu ,  Teng-Hwee Ng ,  Ming-Yang Chuang

IPC: B05C5/02 ,  B05C19/00 ,  B05C11/08 ,  H01L21/00 ,  H01L21/67 ,  B05B14/44

Abstract: A coater includes a chuck, a source of a coating material, a dispensing head, an exhaust system, and a liner. The chuck is configured to support a wafer. The dispensing head is configured to dispense the coating material onto the wafer. The exhaust system is configured to exhaust the excess coating material. The liner is present at least partially on an inner surface of the exhaust system. The liner has a stick resistance to the coating material, and the stick resistance of the liner is greater than a stick resistance of the inner surface of the exhaust system.

公开(公告)号：US20170189932A1

公开(公告)日：2017-07-06

申请号：US14988677

申请日：2016-01-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hsiang Hung ,  Teng-Yi Huang ,  Fu-Jen Tien ,  Li-Jen Wu ,  Cheng-Ming Wu ,  Teng-Hwee Ng ,  Ming-Yang Chuang

IPC: B05C19/00 ,  B05D1/00

CPC classification number: B05C19/008 ,  B05B14/44 ,  B05C5/02 ,  B05C11/08 ,  H01L21/00 ,  H01L21/67017 ,  H01L21/6715

Abstract: A coater includes a chuck, a source of a coating material, a dispensing head, an exhaust system, and a liner. The chuck is configured to support a wafer. The dispensing head is configured to dispense the coating material onto the wafer. The exhaust system is configured to exhaust the excess coating material. The liner is present at least partially on an inner surface of the exhaust system. The liner has a stick resistance to the coating material, and the stick resistance of the liner is greater than a stick resistance of the inner surface of the exhaust system.

公开(公告)号：US09941294B2

公开(公告)日：2018-04-10

申请号：US14832659

申请日：2015-08-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ching-Yen Hsaio ,  Cheng-Ming Wu ,  Shih-Lu Hsu ,  Chien-Hsian Wang

IPC: H01L27/115 ,  H01L27/11521 ,  H01L29/06 ,  H01L21/28 ,  H01L21/027 ,  H01L29/423 ,  H01L29/66 ,  H01L29/788

CPC classification number: H01L27/11521 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/28008 ,  H01L21/28273 ,  H01L21/32139 ,  H01L29/0649 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first gate stack over the semiconductor substrate. The first gate stack includes a first gate and a second gate over the first gate, and the first gate and the second gate are electrically isolated from each other. The semiconductor device structure includes a ring structure surrounding the first gate stack. The ring structure is made of a conductive material.