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公开(公告)号：US20210135702A1
公开(公告)日：2021-05-06
申请号：US16668707
申请日：2019-10-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De JIN
Abstract: Disclosed is a RF switch module and methods to fabricate and operate such RF switch to alternatively couple an antenna to either a transmitter transmission line or a receiver transmission line to realize lower distortion of a signal at high frequencies with improved insertion loss and without affecting isolation. In one embodiment, a Radio Frequency (RF) switch module, includes, a switch circuit for switching between transmitting first signals from a transmitter unit to an antenna and transmitting second signals from the antenna to the receiver unit, wherein the switch circuit comprises a plurality of field effect transistors (FETs), wherein each of the plurality of FETs comprises stacked gate dielectrics and at least three metal contacts to a conductive gate, wherein the stacked gate dielectrics comprises at least one first dielectric layer, wherein the first dielectric layer comprises a negative-capacitance material.
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公开(公告)号：US20230387960A1
公开(公告)日：2023-11-30
申请号：US18231772
申请日：2023-08-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De JIN
CPC classification number: H04B1/48 , H01Q1/50 , H01L23/66 , H01L29/6684 , H01L29/516 , H01L29/78391 , H01L29/7851 , H01L29/513
Abstract: Disclosed is a RF switch module and methods to fabricate and operate such RF switch to alternatively couple an antenna to either a transmitter transmission line or a receiver transmission line to realize lower distortion of a signal at high frequencies with improved insertion loss and without affecting isolation. In one embodiment, a Radio Frequency (RF) switch module, includes, a switch circuit for switching between transmitting first signals from a transmitter unit to an antenna and transmitting second signals from the antenna to the receiver unit, wherein the switch circuit comprises a plurality of field effect transistors (FETs), wherein each of the plurality of FETs comprises stacked gate dielectrics and at least three metal contacts to a conductive gate, wherein the stacked gate dielectrics comprises at least one first dielectric layer, wherein the first dielectric layer comprises a negative-capacitance material.
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公开(公告)号：US20210391891A1
公开(公告)日：2021-12-16
申请号：US17461621
申请日：2021-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De JIN
Abstract: Disclosed is a RF switch module and methods to fabricate and operate such RF switch to alternatively couple an antenna to either a transmitter transmission line or a receiver transmission line to realize lower distortion of a signal at high frequencies with improved insertion loss and without affecting isolation. In one embodiment, a Radio Frequency (RF) switch module, includes, a switch circuit for switching between transmitting first signals from a transmitter unit to an antenna and transmitting second signals from the antenna to the receiver unit, wherein the switch circuit comprises a plurality of field effect transistors (FETs), wherein each of the plurality of FETs comprises stacked gate dielectrics and at least three metal contacts to a conductive gate, wherein the stacked gate dielectrics comprises at least one first dielectric layer, wherein the first dielectric layer comprises a negative-capacitance material.
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公开(公告)号：US20210013195A1
公开(公告)日：2021-01-14
申请号：US16874536
申请日：2020-05-14
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Jun-De JIN , Tzu-Jin YEH
IPC: H01L27/06 , H01L29/06 , H01L29/423
Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate, a metal-oxide-semiconductor device, and a feature. The metal-oxide-semiconductor device is disposed in the substrate. The feature is disposed adjacent to the metal-oxide-semiconductor device. The feature extends into the substrate with a first depth and the metal-oxide-semiconductor device extends into the substrate with a second depth smaller than the first depth.
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公开(公告)号：US20220328473A1
公开(公告)日：2022-10-13
申请号：US17853616
申请日：2022-06-29
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Jun-De JIN , Tzu-Jin YEH
IPC: H01L27/06 , H01L29/423 , H01L29/06
Abstract: A semiconductor device includes a substrate, a first metal-oxide-semiconductor device and a at least one first resistor. The substrate includes a non-doped region. The first metal-oxide-semiconductor device extends into the substrate. The first metal-oxide-semiconductor device is adjacent to the non-doped region. The at least one first resistor is disposed right above the non-doped region and arranged in a first row aligned with the first metal-oxide-semiconductor device in a first direction.
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Patent Agency Ranking
公开(公告)号：US20240371859A1
公开(公告)日：2024-11-07
申请号：US18773203
申请日：2024-07-15
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Jun-De JIN , Tzu-Jin YEH
IPC: H01L27/06 , H01L29/06 , H01L29/423
Abstract: A semiconductor device includes a substrate, a first metal-oxide-semiconductor device and a at least one first resistor. The substrate includes a non-doped region. The first metal-oxide-semiconductor device extends into the substrate. The first metal-oxide-semiconductor device is adjacent to the non-doped region. The at least one first resistor is disposed right above the non-doped region and arranged in a first row aligned with the first metal-oxide-semiconductor device in a first direction.
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公开(公告)号：US20240071961A1
公开(公告)日：2024-02-29
申请号：US18387801
申请日：2023-11-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De JIN
IPC: H01L23/66 , H01L23/528 , H01L27/088 , H01L29/06 , H01L29/417
CPC classification number: H01L23/66 , H01L23/528 , H01L27/088 , H01L29/0603 , H01L29/0692 , H01L29/417
Abstract: Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.
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公开(公告)号：US20220336446A1
公开(公告)日：2022-10-20
申请号：US17853596
申请日：2022-06-29
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Jun-De JIN , Tzu-Jin YEH
IPC: H01L27/06 , H01L29/423 , H01L29/06
Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate, a transistor, at least one isolation and at least one non-doped region. The substrate includes a lower portion. The transistor is disposed on the lower portion. The at least one isolation is adjacent to the transistor, and disposed on the lower portion. The at least one non-doped region is disposed between and adjacent to the isolation and the lower portion.
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公开(公告)号：US20180331663A1
公开(公告)日：2018-11-15
申请号：US16041346
申请日：2018-07-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De JIN
Abstract: A power amplifier (PA) cell is coupled to an input signal source an a load, and includes a transistor coupled to the load; a first inductor coupled to a gate of the transistor; and a second inductor coupled to a source of the transistor, wherein the first inductor and the second inductor each includes a first conductive coil and a second conductive coil, respectively, having first and second inductance values, respectively, such that the power cell is coupled to the input signal source without an input impedance matching circuit disposed between the gate of the transistor and the input signal source, and without an output impedance matching circuit disposed between a drain of the transistor and the load.
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公开(公告)号：US20180109225A1
公开(公告)日：2018-04-19
申请号：US15297580
申请日：2016-10-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De JIN , Ying-Ta Lu , Hsien-Yuan Liao
IPC: H03B5/12
CPC classification number: H03B5/1212 , H03B5/04 , H03B5/1215 , H03B5/1228 , H03B5/124 , H03B5/1243 , H03B5/1296
Abstract: A voltage controlled oscillator (“VCO”) circuit is disclosed. The VCO includes a switch module comprising a first transistor and a second transistor; a first LC-tank module, the first LC-tank module is operatively connected between the drain of the first transistor and the drain of the second transistor; and a second LC-tank module, the second LC-tank module is operatively connected between the gate of the first transistor and the gate of the second transistor, the source of the first transistor and the source of the second transistor are operatively connected.
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