公开(公告)号：US20240332091A1

公开(公告)日：2024-10-03

申请号：US18128119

申请日：2023-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shen-Yang LEE ,  Hsiang-Pi Chang ,  Huiching Chang ,  Shao An Wang ,  Kenichi Sano ,  Huang-Lin Chao

IPC: H01L21/8238 ,  H01L21/28 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66439 ,  H01L29/775

Abstract: A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming nanostructured channel regions, forming gate openings surrounding the nanostructured channel regions, forming oxide layers on exposed surfaces of the nanostructured channel regions in the gate openings, depositing a diffusion barrier layer on the oxide layers, depositing a first dielectric layer on the diffusion barrier layer, performing a doping process on the diffusion barrier layer and the first dielectric layer to form a doped diffusion barrier layer and a doped dielectric layer, and depositing a conductive layer on the doped dielectric layer.