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公开(公告)号:US20220310678A1
公开(公告)日:2022-09-29
申请号:US17353003
申请日:2021-06-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Sheng-Chan Li , Hau-Yi Hsiao , Che Wei Yang , Sheng-Chau Chen , Cheng-Yuan Tsai
IPC: H01L27/146 , H01L21/768
Abstract: Various embodiments of the present disclosure are directed towards an image sensor having a semiconductor substrate comprising a front-side surface opposite a back-side surface. A plurality of photodetectors is disposed in the semiconductor substrate. An isolation structure extends into the back-side surface of the semiconductor substrate and is disposed between adjacent photodetectors. The isolation structure includes a metal core, a conductive liner disposed between the semiconductor substrate and the metal core, and a first dielectric liner disposed between the conductive liner and the semiconductor substrate. The metal core comprises a first metal material and the conductive liner comprises the first metal material and a second metal material different from the first metal material.
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公开(公告)号:US20220362887A1
公开(公告)日:2022-11-17
申请号:US17317977
申请日:2021-05-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kuo-Ming Wu , Yung-Lung Lin , Hau-Yi Hsiao , Sheng-Chau Chen , Cheng-Yuan Tsai
IPC: B23K26/361 , H01L21/02 , B23K26/062 , B23K26/035 , H01L21/66
Abstract: In some embodiments, the present disclosure relates to a wafer edge trimming apparatus that includes a processing chamber defined by chamber housing. Within the processing chamber is a wafer chuck configured to hold onto a wafer structure. Further, a blade is arranged near an edge of the wafer chuck and configured to remove an edge potion of the wafer structure and to define a new sidewall of the wafer structure. A laser sensor apparatus is configured to direct a laser beam directed toward a top surface of the wafer chuck. The laser sensor apparatus is configured to measure a parameter of an analysis area of the wafer structure. Control circuitry is to the laser sensor apparatus and the blade. The control circuitry is configured to start a damage prevention process when the parameter deviates from a predetermined threshold value by at least a predetermined shift value.
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公开(公告)号:US11951569B2
公开(公告)日:2024-04-09
申请号:US17317977
申请日:2021-05-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kuo-Ming Wu , Yung-Lung Lin , Hau-Yi Hsiao , Sheng-Chau Chen , Cheng-Yuan Tsai
IPC: H01L21/02 , B23K26/035 , B23K26/062 , B23K26/361 , H01L21/66
CPC classification number: B23K26/361 , B23K26/035 , B23K26/062 , H01L21/02021 , H01L22/10
Abstract: In some embodiments, the present disclosure relates to a wafer edge trimming apparatus that includes a processing chamber defined by chamber housing. Within the processing chamber is a wafer chuck configured to hold onto a wafer structure. Further, a blade is arranged near an edge of the wafer chuck and configured to remove an edge potion of the wafer structure and to define a new sidewall of the wafer structure. A laser sensor apparatus is configured to direct a laser beam directed toward a top surface of the wafer chuck. The laser sensor apparatus is configured to measure a parameter of an analysis area of the wafer structure. Control circuitry is to the laser sensor apparatus and the blade. The control circuitry is configured to start a damage prevention process when the parameter deviates from a predetermined threshold value by at least a predetermined shift value.
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公开(公告)号:US11127635B1
公开(公告)日:2021-09-21
申请号:US16866685
申请日:2020-05-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yung-Lung Lin , Cheng-Hsien Chou , Cheng-Yuan Tsai , Kuo-Ming Wu , Hau-Yi Hsiao
IPC: H01L21/822 , H01L21/304 , H01L29/06 , H01L27/06
Abstract: The present disclosure relates to a method for forming a multi-dimensional integrated chip structure. In some embodiments, the method may be performed by bonding a second substrate to an upper surface of a first substrate. A first edge trimming cut is performed along a first loop and extends into a first peripheral portion of the second substrate. A second edge trimming cut is performed along a second loop and extends into a second peripheral portion of the second substrate and into the first substrate. A third edge trimming cut is performed along a third loop and extends into a third peripheral portion of the first substrate.
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