公开(公告)号：US10186454B2

公开(公告)日：2019-01-22

申请号：US15623481

申请日：2017-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Han Lin ,  Han-Sheng Weng ,  Chao-Ching Chang ,  Jian-Shin Tsai ,  Yi-Ming Lin ,  Min-Hui Lin

IPC: H01L21/20 ,  H01L21/469 ,  H01L23/12 ,  H01L21/768 ,  H01L23/535 ,  H01L23/48 ,  H01L23/532 ,  H01L21/02

Abstract: A semiconductor structure includes a first dielectric layer, a first conductive via, a second conductive via and an etch stop layer. The first conductive via and the second conductive via are respectively disposed in the first dielectric layer. The etch stop layer is disposed on the first dielectric layer and contacts the first and second conductive vias. The etch stop layer includes nitrogen-and-oxygen-doped silicon carbide (NODC).

公开(公告)号：US10943820B2

公开(公告)日：2021-03-09

申请号：US16414273

申请日：2019-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yi Kao ,  Wei-Jin Li ,  Chung-Chi Ko ,  Yu-Cheng Shiau ,  Han-Sheng Weng ,  Chih-Tang Peng ,  Tien-I Bao

IPC: H01L21/768 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/02 ,  H01L21/762

Abstract: A method for forming a semiconductor structure is provided. The method includes patterning a semiconductor substrate to form a first semiconductor fin and a second semiconductor fin adjacent to the first semiconductor fin, and depositing a first dielectric material on the first semiconductor fin and the second semiconductor fin on the semiconductor substrate using an atomic layer deposition process. There is a first trench between the first semiconductor fin and the second semiconductor fin. The method also includes filling the first trench with a flowable dielectric material, and heating the flowable dielectric material and the first dielectric material to form an isolation structure between the first semiconductor fin and the second semiconductor fin.