公开(公告)号：US11521856B2

公开(公告)日：2022-12-06

申请号：US17151973

申请日：2021-01-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Ming Lung ,  ChunYao Wang

IPC: H01L21/033 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213

Abstract: A method includes depositing a hard mask over a target layer. Depositing the hard mask includes depositing a first hard mask layer having a first density and depositing a second hard mask layer over the first hard mask layer, the second hard mask layer having a second density greater than the first density. The method further includes forming a plurality of mandrels over the hard mask; depositing a spacer layer over and along sidewalls of the plurality of mandrels; patterning the spacer layer to provide a plurality of spacers on the sidewalls of the plurality of mandrels; after patterning the spacer layer, removing the plurality of mandrels; transferring a patterning the plurality of spacers to the hard mask; and patterning the target layer using the hard mask as a mask.

公开(公告)号：US11929254B2

公开(公告)日：2024-03-12

申请号：US18072896

申请日：2022-12-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Ming Lung ,  ChunYao Wang

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8234

CPC classification number: H01L21/0332 ,  H01L21/02164 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/32139 ,  H01L21/823431 ,  Y10S438/947

Abstract: A method includes depositing a hard mask over a target layer. Depositing the hard mask includes depositing a first hard mask layer having a first density and depositing a second hard mask layer over the first hard mask layer, the second hard mask layer having a second density greater than the first density. The method further includes forming a plurality of mandrels over the hard mask; depositing a spacer layer over and along sidewalls of the plurality of mandrels; patterning the spacer layer to provide a plurality of spacers on the sidewalls of the plurality of mandrels; after patterning the spacer layer, removing the plurality of mandrels; transferring a patterning the plurality of spacers to the hard mask; and patterning the target layer using the hard mask as a mask.

公开(公告)号：US20230187265A1

公开(公告)日：2023-06-15

申请号：US17658125

申请日：2022-04-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yi Kao ,  ChunYao Wang ,  Yung-Cheng Lu

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L21/76224 ,  H01L21/324 ,  H01L21/0228

Abstract: A method includes etching a semiconductor substrate to form a semiconductor strip and a recess, with a sidewall of the semiconductor strip being exposed to the recess, depositing a dielectric layer into the recess, and depositing a capping layer over the dielectric layer. The capping layer extends into the recess, and comprises silicon oxynitride. The method further includes filling remaining portions of the recess with dielectric materials, performing an anneal process to remove nitrogen from the capping layer, and recessing the dielectric materials, the capping layer, and the dielectric layer. The remaining portions of the dielectric materials, the capping layer, and the dielectric layer form an isolation region. A portion of the semiconductor strip protrudes higher than a top surface of the isolation region to form a semiconductor fin.

公开(公告)号：US20240177995A1

公开(公告)日：2024-05-30

申请号：US18434121

申请日：2024-02-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Ming Lung ,  ChunYao Wang

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8234

CPC classification number: H01L21/0332 ,  H01L21/02164 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/32139 ,  H01L21/823431 ,  Y10S438/947

Abstract: A method includes depositing a hard mask over a target layer. Depositing the hard mask includes depositing a first hard mask layer having a first density and depositing a second hard mask layer over the first hard mask layer, the second hard mask layer having a second density greater than the first density. The method further includes forming a plurality of mandrels over the hard mask; depositing a spacer layer over and along sidewalls of the plurality of mandrels; patterning the spacer layer to provide a plurality of spacers on the sidewalls of the plurality of mandrels; after patterning the spacer layer, removing the plurality of mandrels; transferring a patterning the plurality of spacers to the hard mask; and patterning the target layer using the hard mask as a mask.

公开(公告)号：US20220102142A1

公开(公告)日：2022-03-31

申请号：US17151973

申请日：2021-01-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Ming Lung ,  ChunYao Wang

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/308 ,  H01L21/8234

Abstract: A method includes depositing a hard mask over a target layer. Depositing the hard mask includes depositing a first hard mask layer having a first density and depositing a second hard mask layer over the first hard mask layer, the second hard mask layer having a second density greater than the first density. The method further includes forming a plurality of mandrels over the hard mask; depositing a spacer layer over and along sidewalls of the plurality of mandrels; patterning the spacer layer to provide a plurality of spacers on the sidewalls of the plurality of mandrels; after patterning the spacer layer, removing the plurality of mandrels; transferring a patterning the plurality of spacers to the hard mask; and patterning the target layer using the hard mask as a mask.