公开(公告)号：US20210391530A1

公开(公告)日：2021-12-16

申请号：US16900550

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Yao CHEN ,  Chun-Heng LIAO ,  Hung Cho WANG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel junction. Below the conductive lower electrode is a first conductive via structure in a first dielectric layer. Below the conductive via structure is a discrete conductive jumper structure in a second dielectric layer. A dielectric body of a third dielectric material that is different from the first dielectric material and the second dielectric material extends vertical from the first dielectric layer at least partially into the second dielectric layer.

公开(公告)号：US20220263013A1

公开(公告)日：2022-08-18

申请号：US17735976

申请日：2022-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Yao CHEN ,  Chun-Heng LIAO ,  Hung Cho WANG

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22

Abstract: The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel junction. Below the conductive lower electrode is a first conductive via structure in a first dielectric layer. Below the conductive via structure is a discrete conductive jumper structure in a second dielectric layer. A dielectric body of a third dielectric material that is different from the first dielectric material and the second dielectric material extends vertical from the first dielectric layer at least partially into the second dielectric layer.

公开(公告)号：US20240090343A1

公开(公告)日：2024-03-14

申请号：US18516751

申请日：2023-11-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Yao CHEN ,  Chun-Heng LIAO ,  Hung Cho WANG

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01

CPC classification number: H10N50/80 ,  H10B61/22 ,  H10N50/01

Abstract: The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel junction. Below the conductive lower electrode is a first conductive via structure in a first dielectric layer. Below the conductive via structure is a discrete conductive jumper structure in a second dielectric layer. A dielectric body of a third dielectric material that is different from the first dielectric material and the second dielectric material extends vertical from the first dielectric layer at least partially into the second dielectric layer.

公开(公告)号：US20210098693A1

公开(公告)日：2021-04-01

申请号：US16702137

申请日：2019-12-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Harry-Hak-Lay CHUANG ,  Chun-Heng LIAO ,  Jun-Yao CHEN ,  Hung-Cho WANG

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/12 ,  G11C11/16

Abstract: A method for manufacturing a memory device is provided. The method includes forming a bottom electrode layer, a resistance switching element layer over the bottom electrode layer, and a top electrode layer over the resistance switching element layer; patterning the top electrode layer into a top electrode; forming a protection spacer on a sidewall of the top electrode; patterning the resistance switching element layer into a resistance switching element after forming the protection spacer; and patterning the bottom electrode layer into a bottom electrode after patterning the resistance switching element layer.