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公开(公告)号：US11682692B2
公开(公告)日：2023-06-20
申请号：US16871257
申请日：2020-05-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Hua Lin , Hsun-Chung Kuang , Yu-Hsing Chang , Yao-Wen Chang
CPC classification number: H01L27/156 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2933/0066
Abstract: In some embodiments, the present disclosure relates to a display device that includes a reflector electrode coupled to an interconnect structure. An isolation structure is disposed over the reflector electrode, and a transparent electrode is disposed over the isolation structure. Further, an optical emitter structure is disposed over the transparent electrode. A via structure extends from a top surface of the isolation structure to the reflector electrode and comprises an outer portion that directly overlies the top surface of the isolation structure. A hard mask layer is arranged directly between the top surface of the isolation structure and the outer portion of the via structure.
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Patent Agency Ranking
公开(公告)号：US11121308B2
公开(公告)日：2021-09-14
申请号：US16601723
申请日：2019-10-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yao-Wen Chang , Chung-Chiang Min , Harry-Hak-Lay Chuang , Hung Cho Wang , Tsung-Hsueh Yang , Yuan-Tai Tseng , Sheng-Huang Huang , Chia-Hua Lin
Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a magnetoresistive random access memory (MRAM) cell over a substrate. A dielectric structure overlies the substrate. The MRAM cell is disposed within the dielectric structure. The MRAM cell includes a magnetic tunnel junction (MTJ) sandwiched between a bottom electrode and a top electrode. A conductive wire overlies the top electrode. A sidewall spacer structure continuously extends along a sidewall of the MTJ and the top electrode. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and a protective sidewall spacer layer sandwiched between the first and second sidewall spacer layers. The first and second sidewall spacer layers comprise a first material and the protective sidewall spacer layer comprises a second material different than the first material.
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公开(公告)号：US20210111312A1
公开(公告)日：2021-04-15
申请号：US16601822
申请日：2019-10-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yao-Wen Chang , Tzu-Chung Tsai , Yen-Chang Chu , Chia-Hua Lin
Abstract: Various embodiments of the present disclosure are directed towards a display device. The display device includes an isolation structure disposed over a semiconductor substrate. An electrode is disposed at least partially over the isolation structure. A light-emitting structure is disposed over the electrode. A conductive reflector is disposed below the isolation structure and electrically coupled to the electrode. The conductive reflector is disposed at least partially between sidewalls of the light-emitting structure. The conductive reflector comprises a non-metal-doped aluminum material.
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公开(公告)号：US11024774B2
公开(公告)日：2021-06-01
申请号：US16601822
申请日：2019-10-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yao-Wen Chang , Tzu-Chung Tsai , Yen-Chang Chu , Chia-Hua Lin
Abstract: Various embodiments of the present disclosure are directed towards a display device. The display device includes an isolation structure disposed over a semiconductor substrate. An electrode is disposed at least partially over the isolation structure. A light-emitting structure is disposed over the electrode. A conductive reflector is disposed below the isolation structure and electrically coupled to the electrode. The conductive reflector is disposed at least partially between sidewalls of the light-emitting structure. The conductive reflector comprises a non-metal-doped aluminum material.
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公开(公告)号：US20210265417A1
公开(公告)日：2021-08-26
申请号：US16871257
申请日：2020-05-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Hua Lin , Hsun-Chung Kuang , Yu-Hsing Chang , Yao-Wen Chang
Abstract: In some embodiments, the present disclosure relates to a display device that includes a reflector electrode coupled to an interconnect structure. An isolation structure is disposed over the reflector electrode, and a transparent electrode is disposed over the isolation structure. Further, an optical emitter structure is disposed over the transparent electrode. A via structure extends from a top surface of the isolation structure to the reflector electrode and comprises an outer portion that directly overlies the top surface of the isolation structure. A hard mask layer is arranged directly between the top surface of the isolation structure and the outer portion of the via structure.
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公开(公告)号：US20210111333A1
公开(公告)日：2021-04-15
申请号：US16601723
申请日：2019-10-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yao-Wen Chang , Chung-Chiang Min , Harry-Hak-Lay Chuang , Hung Cho Wang , Tsung-Hsueh Yang , Yuan-Tai Tseng , Sheng-Huang Huang , Chia-Hua Lin
Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a magnetoresistive random access memory (MRAM) cell over a substrate. A dielectric structure overlies the substrate. The MRAM cell is disposed within the dielectric structure. The MRAM cell includes a magnetic tunnel junction (MTJ) sandwiched between a bottom electrode and a top electrode. A conductive wire overlies the top electrode. A sidewall spacer structure continuously extends along a sidewall of the MTJ and the top electrode. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and a protective sidewall spacer layer sandwiched between the first and second sidewall spacer layers. The first and second sidewall spacer layers comprise a first material and the protective sidewall spacer layer comprises a second material different than the first material.
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