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    Bonding method, device produced by this method, and bonding device
    7.
    发明申请
    Bonding method, device produced by this method, and bonding device 有权
    接合方法，通过该方法制造的器件和接合装置

    公开(公告)号：US20070111471A1

    公开(公告)日：2007-05-17

    申请号：US10581430

    申请日：2004-12-02

    申请人： Masuaki Okada

    发明人： Masuaki Okada

    IPC分类号： H01L21/30

    CPC分类号： C03C27/06 ,  B81C3/001 ,  B81C2201/019 ,  C03C23/0005 ,  C03C27/00 ,  H01L21/67092 ,  H01L21/76251

    摘要： Conventional heat bonding and anodic bonding require heating at high temperature and for a long time, leading to poor production efficiency and occurrence of a warp due to a difference in thermal expansion, resulting in a defective device. Such a problem is solved. An upper wafer 7 made of glass and a lower wafer 8 made of Si are surface-activated using an energy wave before performing anodic bonding, thereby performing bonding at low temperature and increasing a bonding strength. In addition, preliminary bonding due to surface activation is performed before main bonding due to anodic bonding is performed in a separate step or device, thereby increasing production efficiency, and enabling bonding of a three-layer structure without occurrence of a warp.

    摘要翻译： 传统的热粘合和阳极接合需要在高温下长时间加热，导致生产效率差和由于热膨胀差导致翘曲的发生，从而导致装置不良。 这个问题解决了。 由玻璃制成的上晶片7和由Si制成的下晶片8在进行阳极接合之前使用能量波进行表面激活，从而在低温下进行接合并提高接合强度。 此外，由于阳极接合在主要接合之前在单独的步骤或装置中执行由于表面活化的预接合，从而提高了生产效率，并且能够在不发生翘曲的情况下进行三层结构的接合。

    Bonding method, device formed by such method, surface activating unit and bonding apparatus comprising such unit
    8.
    发明申请
    Bonding method, device formed by such method, surface activating unit and bonding apparatus comprising such unit 审中-公开
    接合方法，由这种方法形成的装置，表面激活单元和包括这种单元的粘合装置

    公开(公告)号：US20070110917A1

    公开(公告)日：2007-05-17

    申请号：US10581500

    申请日：2004-12-02

    申请人： Masuaki Okada

    发明人： Masuaki Okada

    IPC分类号： B05D3/00

    CPC分类号： H01L21/67092 ,  H01L21/76251 ,  H01L23/544 ,  H01L24/26 ,  H01L24/75 ,  H01L24/80 ,  H01L24/83 ,  H01L2223/54453 ,  H01L2224/80907 ,  H01L2224/8385 ,  H01L2224/83894 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701

    摘要： In a method of bonding objects to be bonded together in a solid phase at low temperature after subjecting bonding surfaces of the objects to be bonded to a hydrophilic treatment using a plasma, the objects to be bonded are conventionally handled in the atmospheric air for bonding, so that adhesion of organic substances in the atmospheric air leads to a reduction in bonding strength. Therefore, diffusion bonding needs to be performed at a temperature of as high as 1100° C. in the conventional art. According to the present invention, firm bond can be achieved at low temperature. In a method for bonding objects to be bonded together in a solid phase after subjecting bonding surfaces of the objects to be bonded to a hydrophilic treatment using a plasma, a chemical treatment step of subjecting both the objects to be bonded to the hydrophilic treatment using the plasma without exposure to the atmospheric air is performed after a physical treatment step of subjecting both the objects to be bonded to a physical treatment using an energy wave, such as an atom beam, an ion beam or a plasma, thereby bonding both the objects to be bonded together. Therefore, satisfactory bonding can be achieved without adhesion of organic substances or the like, thereby making it possible to achieve firm bond at a low temperature of 500° C. or less.

    摘要翻译： 在使待等离子体进行亲水处理的接合面接合后，在低温下将固定在一起的物体接合在一起的方法中，通常在大气中进行接合， 使得有机物质在大气中的粘附导致结合强度的降低。 因此，在现有技术中，需要在高达1100℃的温度下进行扩散接合。 根据本发明，可以在低温下实现牢固的粘合。 在使用等离子体进行亲水处理的接合面接合后，将固定在一起的物体接合在一起的方法，使用该等离子体进行亲水处理的化学处理工序 在没有暴露于大气中的等离子体的物理处理步骤之后，使用诸如原子束，离子束或等离子体的能量波进行物理处理，从而将两个物体接合 结合在一起 因此，无需粘附有机物质等，可以实现令人满意的粘合，从而可以在500℃以下的低温下实现牢固的粘合。

    Bonding method, device produced by this method, and bonding device
    9.
    发明授权
    Bonding method, device produced by this method, and bonding device 有权
    接合方法，通过该方法制造的器件和接合装置

    公开(公告)号：US07645681B2

    公开(公告)日：2010-01-12

    申请号：US10581430

    申请日：2004-12-02

    申请人： Masuaki Okada

    发明人： Masuaki Okada

    IPC分类号： H01L21/30

    CPC分类号： C03C27/06 ,  B81C3/001 ,  B81C2201/019 ,  C03C23/0005 ,  C03C27/00 ,  H01L21/67092 ,  H01L21/76251

    摘要： Conventional heat bonding and anodic bonding require heating at high temperature and for a long time, leading to poor production efficiency and occurrence of a warp due to a difference in thermal expansion, resulting in a defective device. Such a problem is solved. An upper wafer 7 made of glass and a lower wafer 8 made of Si are surface-activated using an energy wave before performing anodic bonding, thereby performing bonding at low temperature and increasing a bonding strength. In addition, preliminary bonding due to surface activation is performed before main bonding due to anodic bonding is performed in a separate step or device, thereby increasing production efficiency, and enabling bonding of a three-layer structure without occurrence of a warp.

    摘要翻译： 传统的热粘合和阳极接合需要在高温下长时间加热，导致生产效率差和由于热膨胀差导致翘曲的发生，从而导致装置不良。 这个问题解决了。 由玻璃制成的上晶片7和由Si制成的下晶片8在进行阳极接合之前使用能量波进行表面激活，从而在低温下进行接合并提高接合强度。 此外，由于阳极接合在主要接合之前在单独的步骤或装置中执行由于表面活化的预接合，从而提高了生产效率，并且能够在不发生翘曲的情况下进行三层结构的接合。