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    Photosensitive semi-conductor device
    1.
    发明授权
    Photosensitive semi-conductor device 失效
    光敏半导体器件

    公开(公告)号：US3668473A

    公开(公告)日：1972-06-06

    申请号：US3668473D

    申请日：1970-06-23

    Applicant: TOKYO SHIBAURA ELECTRIC CO

    Inventor： MIYASHIRO SHOICHI

    IPC: H01J29/39 ,  H01L23/29 ,  H01L27/00 ,  H01L15/00

    CPC classification number: H01L23/291 ,  H01J29/39 ,  H01L23/29 ,  H01L27/00 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10S257/917 ,  H01L2924/00

    Abstract: A photosensitive semi-conductor device for use as a target of camera tubes. It has a semi-insulating layer formed on that side of a semi-conductor substrate which is impinged by light photons or energetic electrons. The semi-insulating layer is charged in accordance with the incident light photons or energetic electrons, and the electric field set up across the semiinsulating coating layer by the bombardment of light photons and energetic electrons has an effect of controlling the motion of minority carriers to automatically control the input-output photoelectric conversion gain of the photosensitive semiconductor device.

    Abstract translation: 用作照相机管的目标的光敏半导体器件。 它具有半导体衬底的由光子或能量电子撞击的一侧形成的半绝缘层。 半绝缘层根据入射光子或能量电子进行充电，并且通过光子和高能电子的轰击在半绝缘涂层上形成的电场具有控制少数载流子运动的作用 自动控制光敏半导体器件的输入输出光电转换增益。

    Image pickup tube device utilizing a magnetic field generator to reverse the leakage field
    2.
    发明授权
    Image pickup tube device utilizing a magnetic field generator to reverse the leakage field 失效
    利用磁场发生器反转泄漏场的图像拾取管装置

    公开(公告)号：US3659140A

    公开(公告)日：1972-04-25

    申请号：US3659140D

    申请日：1969-06-16

    Applicant: TOKYO SHIBAURA ELECTRIC CO

    Inventor： MIYASHIRO SHOICHI ,  SHIROUZU SHUNZI ,  IWASAWA MINEO

    IPC: H01J29/64 ,  H01J31/36 ,  H01J31/26

    CPC classification number: H01J29/64 ,  H01J31/36

    Abstract: An image pickup tube device has an evacuated container including a scanning section and an image section. In the sections are respectively mounted first and second magnetic means; the former generating a magnetic field in the image section and producing a leakage of magnetic field in the other section, the latter producing a magnetic field to reverse the polarity of the leakage field.

    Abstract translation: 图像拾取管装置具有包括扫描部和图像部的抽真空容器。 在这些部分分别安装有第一和第二磁性装置; 前者在图像部分中产生磁场并在另一部分产生磁场的泄漏，后者产生磁场以反转泄漏场的极性。

    Image pickup tube semiconductor target support structure
    5.
    发明授权
    Image pickup tube semiconductor target support structure 失效
    图像抽吸管半导体目标支持结构

    公开(公告)号：US3702410A

    公开(公告)日：1972-11-07

    申请号：US3702410D

    申请日：1971-04-20

    Applicant: TOKYO SHIBAURA ELECTRIC CO

    Inventor： MIYASHIRO SHOICHI ,  SHIROUZU SHUNJI ,  TSUJI SHIGEO

    IPC: H01J29/44 ,  H01L27/00 ,  H01J31/28 ,  H01J29/02 ,  H01J31/38

    CPC classification number: H01J29/44 ,  H01L27/00

    Abstract: An image intensifier vidicon which is divided by a semiconductor target into an image section, the inner surface of the face plate of which is coated with an electron-emissive layer and a scanning section, wherein said semi-conductor target includes a semiconductor substrate, a plurality of PN junctions formed therein, an accelerating layer formed on the electron incident side of said target, and a scanning surface which is protected from contamination by alkali metals constituting the electronemissive layer by means of insulation rings provided in the scanning section. One of the insulation rings also set the critical spacing between the target and a mesh electrode.

    Abstract translation: 将由半导体靶分割成图像部分的图像增强器视频体，其面板的内表面涂覆有电子发射层和扫描部分，其中所述半导体靶包括半导体衬底， 形成在其中的多个PN结，形成在所述靶的电子入射侧上的加速层和通过设置在扫描部中的绝缘环来防止构成电子发射层的碱金属的污染的扫描表面。 绝缘环中的一个还设置了靶和网状电极之间的临界间隔。

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